E L E C T R O N I C RSM5853P P-Channel 20Volt (D-S) MOSFET With Schottky Diode □ Application -These miniature surface mount MOSFET utilize a high cell density trench CF 1206-8 TOP VIEW process to provide low RDS(on) and to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC A 1 8 K converters and power management in portable and battery-powered A 2 7 K products such as coputers, printers, PCMCIA cards, cellular and cordless S 3 6 D telephones. G 4 5 D □ Feature S K D A -Low RDS(on) provides higger efficiency and extends battery life G -Low thermal impedance copper leadframe CF 1206-8 saves board space -Fast switching speed -High performance trench technology □ Absolute Maximum Ratings PARAMETER SYMBOL MAXIMUM Drain-Source Voltage (MOSFET) VDS -20 Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±8 Continuous Drain Current @ TJ = 150ºC (MOSFET) (Note 1) TA = 25 ºC TA = 70 ºC ID ±1.9 IDM ±10 Continuous Source Current (MOSFET Diode Conduction) (Note 1) IS -1.6 Average Forward Current (Schottky) IF 0.5 Pulsed Forward Current (Schottky) IFM 8 Maximum Power Dissipation (Schottky) (Note 1) TA = 25 ºC TA = 70 ºC TA = 25 ºC PD Steady State Note: 1.Surface Mounted on 1” X 1” FR-4 Board 2.Pulse width limited by maximum junction temperature http:// www.sirectsemi.com 1.1 1.3 W 0.68 TJ , TSTG t ≦ 5sec Maximum Junction-to-Ambient A 2.1 TA = 70 ºC Operating Junction and Storage Temperature Range V ±2.5 Pulsed Drain Current (MOSFET) (Note 2) Maximum Power Dissipation (MOSFET) (Note 1) UNIT RθJA -55 to +150 60 110 ºC ºC/W September 2008 / Rev.6.2 RSM5853P □ MOSFET Specifications PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -0.4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -16V, VGS = 0V, TJ = 55ºC -10 On-State Drain Current (Note 1) ID(on) UNIT STATIC Drain-Source On-State Resistance (Note 1) RDS(on) VDS = -5V, VGS = -4.5V V -5 nA μA A VGS = -4.5V, ID = -3.6A 0.110 VGS = -2.5V, ID = -3.0A 0.160 Ω Forward Tranconductance (Note 1) gfs VDS = -5V, ID = -3.6A 3 S Diode Forward Voltage VSD IS = -1.6A, VGS = 0V -0.70 V DYNAMIC (Note 2) Total Gate Charge Qg 6.0 VDS = -5V, VGS = -4.5V, ID = -3.6A Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.3 Turn-On Delay Time Td(on) 6.5 Rise Time tr Turn-Off Delay Times Td(off) Fall Time tf nC 20 VDD = -5V, RL = 5Ω, VGEN = -4.5V, RG = 6Ω nS 31 21 □ Schottky Specifications PARAMETER SYMBOL Forward Voltage Drop VF Maximum Reverse Leakage Current Junction Capacitance Irm CONDITIONS MIN. TYP. MAX. IF = 0.5A 0.48 IF = 0.5A, TJ = 125ºC 0.4 Vr = 30V 0.1 Vr = 30V, TJ = 75ºC 1 Vr = 30V, TJ = 125ºC 10 CT Vr = 10V Note: 1. Pulse Test : PW≦300μs duty cycle≦2% 2.Guaranteed by design, not subject to production tesing http:// www.sirectsemi.com 31 UNIT V mA pF RSM5853P 2 15 -3.0V VGS = -4.5V -ID, DRAIN CURRENT (A) -2.5V -ID, DRAIN CURRENT (A) -3.5V 12 9 -2.0V 6 3 1.8 1.6 VGS = -2.0V 1.4 -2.5V -3.0V 1.2 -3.5V -4.5V 1 -1.5V 0.8 0 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 6 9 12 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 1. On-Region Characteristics 0.22 RDS(on), ON-RESISTANCE (O) 1.4 RDS(on), NORMALIZED DRAINSOURCE ON-RESISTANCE 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.3 ID = -2A VGS = -4.5V 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 100 50 ID = -1A 0.18 0.14 TA = 125ºC 0.10 TA = 25ºC 0.06 0.02 150 1 TJ, JUNCTION TEMPERATURE (ºC) 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate to Source Voltage 10 VGS = 0V -ID, DRAIN CURRENT (A) VDS = -5V TA = -55ºC -IS, REVERSE DRAIN CURRENT (A) 10 25ºC 8 125ºC 6 4 2 1 TA = 125ºC .1 25ºC .01 -55ºC .001 .0001 0 0.5 1 1.5 2 2.5 0 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature http:// www.sirectsemi.com RSM5853P 1000 -VGS, GATE-SOURCE VOLTAGE (V) 5 ID = -3.5V VDS = -5V f = 1MHz VGS = 0V CISS -10V 800 CAPACITANCE (pF) 4 -15V 3 2 600 400 1 200 0 0 COSS CROSS 0 2 4 6 8 0 10 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qd, GATE CHARGE (nC) Figure 8. Capacitance Characteristics Figure 7. Gate Charge Characteristics 100 5 RDS(ON) LIMIT 10 1m 10 1 1s 0m SINGLE PLUSE RθJA = 156 oC/W TA = 25 oC 4 s ms POWER (W) 10 s DC 0.1 3 2 1 VGS = -4.5V SINGLE PLUSE RθJA = 156oC/W TA = 25oC 0 0.1 0.01 0.1 1 10 1 100 10 SINGLE PULSE TIME (SEC) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pluse Maximum Power Dissipation Figure 9. Maximum Safe Operating Area 1 D = 0.5 THERMAL IMPEDANCE ZthJC (C/W) -ID, DRAIN CURRENT (A) 100µs RθJA(t) = r(t) + RθJA RθJA = 156oC/W D = 0.2 0.1 D = 0.1 D = 0.05 PDM D = 0.02 t1 t2 D = 0.01 0.01 Notes: 1.Duty factor D = t1 / t2 2.Peak Tj = PDM x ZthJC + TC SINGLE PULSE (THERMAL RESISTANCE) 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (SEC) Figure 11. Transient Thermal Response Curve http:// www.sirectsemi.com 100 1000 100 RSM5853P E E1 b e D L1 L θ c A DIM A A1 b c D E E1 e L L1 θ A1 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.027 0.036 0.70 0.90 0.000 0.002 0.00 0.03 0.009 0.014 0.24 0.35 0.003 0.010 0.08 0.25 0.118 BSC 3.00 BSC 0.079 BSC 2.00 BSC 0.067 BSC 1.70 BSC 0.026 BSC 0.65 BSC 0.008 0.016 0.20 0.40 0.000 0.004 0.00 0.10 0° 12° 0° 12° NOTE Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com