SG75S12S Discrete IGBTs Dimensions SOT-227(ISOTOP) SG75S12S IC A 75 VCE V 1200 Maximum Rated Values Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 (Tvj = 25°C, unless specified otherwise) Parameter Symbol Collector-Emitter Voltage VCES Conditions VGE shorted Values Unit 1200 V DC Collector Current IC Ths = 70°C 75 A Peak Collector Current ICM Pulse: tp = 1ms, Ths = 70°C 150 A _ +20 V 340 W 75 A 150 A Values Unit Gate Emitter Voltage Total Power Dissipation VGES Ptot Ths = 25°C per switch IGBT Switching SOA SwSOA _ 1000V, IC = 150A, VCEM = 1200V, VCC < _ VGE = +15V, Tvj = 125°C voltages measured on auxiliary terminals IGBT Short Circuit SOA SCSOA VCC = 900V, VCEM = 1200V, tp = 10µs, _ VGE = +15V, Tvj = 125°C DC Forward Current IF Peak Forward Current IFM Maximum Rated Values (cont.) Parameter Pulse: tp = 1ms, Ths = 70°C (Tvj = 25°C, unless specified otherwise) Symbol Conditions Junction Temperature Tvj -40 ~ 150 °C Storage Temperature Ttstg / Tcop -40 ~ 125 °C 2500 V Isolation Voltage Viso 1min, f = 50Hz SG75S12S Discrete IGBTs IGBT Characteristic Values Parameter Collector-Emitter Saturation Voltage Collector Cut-off Current Gate-Emitter leakage Current Gate-Emitter Threshold Voltage (Tvj = 25°C, unless specified otherwise) VCE(sat)* IC = 75A, VGE = 15V Tvj = 125°C 2.20 2.35 V V mA IGES _ VCE = 0V, VGE = +20V, Tvj = 125°C _ +500 nA 6.5 V VGE(TO) IC = 3mA, VCE = VGE Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) Turn-on Switching Energy 2.00 6 Input Capacitance Fall Time Tvj = 25°C max. Unit VCE = 1200V, VGE = 0V, Tvj = 125°C Qge Turn-Off Delay Time min. typ. ICES Total Gate Charge Rise Time Conditions Sybmol tr td(off) tf IC = 75A, VCE = 600V, VGE = -15 to 15V VCE = 25V, VGE = 0V, f = 1MHz IC = 75A, VCC = 600V, Rgon = 15 , _ Tvj = 125°C, VGE = +15V IC = 75A, VCC = 600V, Rgoff = 15 , _ Tvj = 125°C, VGE = +15V Eon Rgon = 15 Eoff Rgoff = 15 Module stray Inductance Plus to Minus LsDC Resistance terminal-chip RCC'+EE' 4.5 IC = 75A, Tvj = 125°C, _ VCC = 600V, VGE = +15V, inductive load, integrated up to: 3% VCE (Eon), 1% IC (Eoff) * Note 1: Collector emitter saturation voltage is given at die level. 750 nC 6.5 nF 1.6 nF 1.4 nF 0.1 µs 0.05 µs 0.50 µs 0.09 µs 8.5 mJ 7.0 mJ 25 Ths = 25°C Ths = 125°C 1.25 1.90 nH m SG75S12S Discrete IGBTs Diode Characteristic Values Parameter (Tj = 25°C, unless specified otherwise) Symbol Forward Voltage VF* Reverse Recovery Current Irrm Reverse Recovery Charge Qrr Reverse Recovery Time trr Reverse Recovery Energy Resistance terminal-chip Erec Conditions IF = 75A typ. max. Tvj = 25°C 2.00 2.40 Tvj = 125°C 2.00 min. IF = 75A, Rgon = 15 , VCC = 600V, _ VGE = +15V, Tvj = 125°C IF = 75A, Tvj = 125°C, VCC = 600V, _ Rgon = 15 , VGE = +15V, inductive load, fully integrated Ths = 25°C Ths = 125°C RCC'+EE' Unit V 75 A 14 µC 0.35 µs 5.5 mJ 1.25 1.90 m * Note 2: Forward voltage is gaiven at die level Thermal Characteristics (Tj = 25°C, unless specified otherwise) Parameter Symbol IGBT Thermal Resistance Junction to Heatsink Diode Thermal Resistance Junction to Heatsink Rth j-h Igbt Rth j-h Diode Equivalent IGBT Thermal Resistance Junct. to Case Equivalent Diode Thermal Resistance Junct. to Case Rth j-c Igbt Rth j-c Diode Conditions min. typ. max. Unit 0.370 °C/W Heatsink: flatness < +/-20µm, roughness < 6µm without ridge Thermal grease: thickness: 30µm < t < 50µm 0.740 °C/W 0.235 °C/W 0.550 °C/W SG75S12S Discrete IGBTs Fig. 1 Typ. Output Characteristics at Tvj=25°C Fig. 2 Typ. Output Characteristics at Tvj=125°C Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristi SG75S12S Discrete IGBTs Fig. 5 Typ. Switching Energies per pulse vs on-state current Fig. 6 Typ. Switching Energies per pulse v gate resistor Fig. 7 Typ. Switching times vs on-state current Fig. 8 Typ. Switching times vs gate resistor SG75S12S Discrete IGBTs Fig. 9 Fig. 11 Typ. Capacitances vs collector-emitter Voltage Typ. Reverse Recovery Characteristics vs forward current Fig. 10 Typ. Diode forward Characteristics Fig. 12 Typ. Reverse Recovery Characteristics vs gate resistor SG75S12S Discrete IGBTs Fig. 13 Typ. Thermal impedance vs time