SBB-5089Z Product Description Sirenza Microdevices’ SBB-5089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB-5089Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB-5089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Gain & Return Loss vs. Frequency (w/ BiasTees) 30 20 S21 dB 10 0.05-6 GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier Pb RoHS Compliant & Green Package Product Features • • • • • • • Wideband Flat Gain to 4GHz: +/-1.1dB P1dB = 20.4 dBm @ 1950MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C Patented Thermal Design & Bias Circuit Low Thermal Resistance MSL 1 moisture rating Applications 0 • • • • -10 S22 -20 S11 -30 PA Driver Amplifier Cellular, PCS, GSM, UMTS Wideband Intrumentation Wireless Data, Satellite Terminals -40 0 1 2 3 Frequency (GHz) Symbol S21 P1dB IP3 Bandwidth 4 5 Parameters Small Signal Gain 6 Units Frequency Min. Typ. Max. dB 850 MHz 1950 MHz 6000 MHz 19 18.5 14.5 20.5 20 16 21.5 Output Power at 1 dB Compression dBm 850 MHz 1950 MHz 19 20.5 20.5 Third Order Intercept Point dBm 850 MHz 1950 MHz 33 38.5 35 S11, S22: Minimum 10dB Return Loss (typ.) MHz 22 17.5 3000 S11 Input Return Loss dB 1950 MHz 10 14 S22 Output Return Loss dB 1950 MHz 10 14 S12 Reverse Isolation dB 1950 MHz 23.3 NF Noise Figure dB 1950 MHz 4.2 4.9 VD Device Operating Voltage V 5 5.25 ID Device Operating Current mA 75 92 RTH, j-l Thermal Resistance (junction - lead) Test Conditions: VD = 5V T L = 25°C 65 °C/W ID = 75 mA Typ. ZS = Z L = 50 Ohms 69.9 OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm Tested with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103839 Rev F SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With 0.5-3.5 GHz Application Circuit) Frequency (MHz) Symbol S21 Parameter Small Signal Gain Unit 500 850 1950 2500 3500 4000 dB 20.8 20.8 20.1 19.8 18.7 17.8 OIP3 Output Third Order Intercept Point dBm 38.6 39.2 34.9 32.8 29.4 26.8 P1dB Output Power at 1dB Compression dBm 20.5 20.4 20.4 19.4 16.9 14.7 S11 Input Return Loss dB 27.2 22.7 14.6 12.9 10.6 11.6 S22 Output Return Loss dB 31.8 21.5 13.5 12.0 13.5 27.5 S12 Reverse Isolation dB 22.7 22.8 23.4 23.7 24.7 25.7 dB 3.8 3.8 4.1 4.1 4.3 4.6 Noise Figure TestNF Conditions: ID = 75 mA Typ. VCC = 5V Test Conditions: TL = 25°C OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Noise Figure @ 25C 8 7 6 dB 5 4 3 2 Avg. BiasTee 1 Avg. AppCkt P1dB vs. Frequency with App. Ckt. 25 0 0.5 1 1.5 2 2.5 3 3.5 20 4 dBm Frequency (GHz) 15 OIP3 vs. Frequency with App. Ckt. 45 P1dB 25C 10 P1dB -40C P1dB 85C 40 5 dBm 35 0.5 30 25 1 1.5 2 2.5 Frequency (GHz) 3 3.5 4 IP3 25C IP3 -40C 20 IP3 85C 15 0.5 1 303 S. Technology Ct. Broomfield, CO 80021 1.5 2 2.5 Frequency (GHz) 3 3.5 4 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103839 Rev F SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier S-Parameters over Temperature (Bias Tee) S11 vs. Frequency 0 S21 vs. Frequency 25 20 -10 dB dB 15 -20 10 25C -30 25C -40C -40C 5 85C 85C -40 0 0 1 2 3 Frequency (GHz) 4 5 6 0 S12 vs. Frequency -10 0 -15 -10 1 2 3 4 Frequency (GHz) 5 6 5 6 S22 vs. Frequency -20 dB dB -20 -25 -30 -30 25C 25C -35 -40C -40 -40C 85C 85C -40 -50 0 1 2 3 4 Frequency (GHz) 5 6 0 1 2 3 4 Frequency (GHz) Device Current over Temperature (Bias Tee) Id vs. Temperature Current vs. Voltage Over Temp. (Bias Tees) 105 84 82 Current (mA) Current (mA) 95 80 85 75 25C 65 -40C 85C 55 78 -40C 303 S. Technology Ct. Broomfield, CO 80021 25C Temperature 85C Phone: (800) SMI-MMIC 3 4.5 4.6 4.7 4.8 4.9 5 5.1 Voltage (V) 5.2 5.3 5.4 5.5 http://www.sirenza.com EDS-103839 Rev F SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier 0.5 to 3.5GHz Application Circuit S-Parameters over Temperature S11 vs. Frequency 0 S21 vs. Frequency 25 20 -10 dB dB 15 -20 25C 10 -40C 25C -30 85C -40C 5 85C -40 0 0 1 2 Frequency (GHz) 3 4 0 S12 vs. Frequency -10 0 -15 -10 2 Frequency (GHz) 3 4 3 4 S22 vs. Frequency -20 dB dB -20 1 -25 -30 -30 25C -35 25C -40 -40C -40C 85C 85C -50 -40 0 1 2 Frequency (GHz) 3 0 4 1 2 Frequency (GHz) Device Current over Temperature (w/App. Ckt.) Current vs. Voltage Over Temp. (App. Ckt.) Id vs. Temperature 105 84 Current (mA) Current (mA) 95 82 80 85 75 25C 65 -40C 85C 55 78 4.5 -40C 303 S. Technology Ct. Broomfield, CO 80021 25C Temperature 85C Phone: (800) SMI-MMIC 4 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 Voltage (V) http://www.sirenza.com EDS-103839 Rev F SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier Application Schematic Application Circuit Element Values Reference Designator VS 1 uF 1200 pF CB Frequency (MHz) 500 to 3500 CB 68pF LC 82nH 1008CS LC 4 1 SBB-5089 3 RF in CB 2 RF out CB Evaluation Board Layout + Absolute Maximum Ratings Parameter Absolute Limit Max. Device Current (ID) 100 mA Max. Device Voltage (VD) 5.5 V Max. RF Input Power +12 dBm Max. Operating Dissipated Power 0.55 W Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD ESD Class 1C Appropriate precautions in handling, packaging and testing devices must be observed. Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this datasheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 MSL (Moisture Sensitivity Level) Rating: Level 1 http://www.sirenza.com EDS-103839 Rev F SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier Suggested PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Bottom View Side View Package Marking 4 3 1 1 2 BB5Z 2 3 Lead Free Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible 3 RF OUT/ BIAS Part Number Ordering Information Part Number Reel Size Devices / Reel SBB-5089Z 7" 1000 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 Description RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. http://www.sirenza.com EDS-103839 Rev F