Product Description The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss vs. Frequency ID= 80 mA (Typ.) Tuned Application Circuit (fig.1) 25 0 -5 Gain (dB) Gain 15 -10 ORL 10 -15 IRL 5 Return Loss (dB) 20 -25 0 1 2 3 4 5 6 7 RoHS Compliant & Green Package Pb DC-8 GHz Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features • Available in Lead Free, RoHS Compliant • • • • • • green package ( Z Suffix ) 50 Ohm Cascadable Gain Block Wideband Flat Gain to 3 GHz: +/-1.4dB P1dB = 13.4 @ 6 GHz Input / Output VSWR < 2:3 to 8 GHz Patented Thermal Design Single Voltage Supply Operation Applications • Wideband Instrumentation • Fiber Optic Driver • OC-48 • Basestation • SAT COM -20 0 SBW-5089 SBW-5089Z 8 Frequency (GHz) Symbol G Parameter Small Si gnal Gai n ( PC board and connector losses de-embeded ) U nits Frequency Min. Typ. Max. dB 850 MHz 3000 MHz 4200 MHz 6000 MHz 19.3 17.0 21.3 19.0 14.5 20.3 18.0 17.2 15.5 18.4 20.1 19.4 32.0 35.5 34.0 P 1dB Output Power at 1dB C ompressi on dB m 850 MHz 1950 MHz OIP3 Output Thi rd Order Intercept Poi nt dB m 850 MHz 1950 MHz Pout Output Power @ -45dBc AC P IS-95 9 Forward C hannels dB m 1950MHz Bandwi dth D etermi ned by Return Loss (>10dB) MHz IRL 16.5 13.0 6000 Worst case Input Return Loss dB D C -6000MHz 7 10 Worst case Output Return Loss dB D C -6000MHz 8 10 NF Noi se Fi gure dB 1950 MHz 3.9 4.4 VD D evi ce Operati ng Voltage V 4.5 4.9 5.3 ID D evi ce Operati ng C urrent mA 72 80 88 ORL RTH, j-l Thermal Resi stance (juncti on to lead) Test Conditions: VS = 8 V ID = 80 mA Typ. Bias Resistance = 39 Ohms °C /W OIP3 Tone Spacing = 1 MHz Pout per tone = 0 dBm 70 TL = 25ºC ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 1 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Symbol G Parameter Small Signal Gain 500 850 1950 2400 3500 5800 dB 20.5 20.3 19.1 18.7 17.3 15.1 OIP3 Output Third Order Intercept Point dB m 36.5 35.5 34.0 33.0 30.5 25.5 P 1dB Output Power at 1dB Compression dB m 20.2 20.1 19.4 19.4 17.5 13.4 IRL Input Return Loss dB 26 26 19 15 12 12.5 ORL Output Return Loss dB 19 17.5 12 11 10.5 10.9 S 12 Reverse Isolation dB 22 23 23 23 23 23 NF Noise Figure dB 3.6 3.6 3.9 3.9 4.1 4.3 VS = 8 V ID = 80 mA Typ. Bias Resistance = 39 Ohms Test Conditions: * Frequency (MHz ) Units OIP3 Tone Spacing = 1 MHz Pout per tone = 0 dBm TLEAD = 25ºC ZS = ZL = 50 Ohms 5.8GHz data measured with tuned app circuit in fig. 2. Absolute Maximum R atings P1dB vs. Frequency P1dB (dBm) 26 Parameter Absolute Limit Max. D evi ce C urrent (ID) 130 mA 23 Max. D evi ce Voltage (VD) 6V 20 Max. RF Input Power +17 dBm Max. Operati ng D i ssi pated Power 0.65 W 17 14 11 -40°C +85°C 5 0 1 2 3 4 Frequency(GHz) 5 +150°C -40°C to +85°C Max. Storage Temp. +150°C Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. +25°C 8 Max. Juncti on Temp. (TJ) Operati ng Temp. Range (TL) 6 Bi as condi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency Noise Figure vs. Frequency 39 6 36 5 30 4 NF (dB) OIP3 (dBm) 33 27 24 21 3 2 -40°C 18 -40°C 1 +25°C 15 +25°C +85°C +85°C 12 0 0 1 303 South Technology Court Broomfield, CO 80021 2 3 4 Frequency (GHz) 5 6 0 EDS-103325 Rev. C 2 1 2 3 4 Frequency (GHz) 5 6 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Typical RF Performance Over Lead Temperature In Basic Application Circuit (Fig.2) |S | vs. Frequency 21 25 |S | vs. Frequency 11 0 -5 20 -10 |S11| (dB) |S21| (dB) ( Bias: ID= 80 mA Typ.) 15 10 -40°C +25°C +85°C 5 -15 -20 -25 -40°C +25°C +85°C -30 -35 -40 0 0 1 2 3 4 5 6 7 8 9 0 10 1 2 4 5 6 7 8 9 10 9 10 Frequency (GHz) Frequency (GHz) |S | vs. Frequency 12 -10 3 |S | vs. Frequency 22 0 -5 -40°C +25°C +85°C -10 |S22| (dB) |S12| (dB) -15 -20 -25 -15 -20 -25 -30 -40°C +25°C +85°C -35 -30 -40 0 1 2 3 4 5 6 7 8 9 10 0 1 2 Frequency (GHz) 3 4 5 6 7 8 Frequency (GHz) NOTE: Full S-parameter data available at www.sirenza.com IS-95 @ 850MHz Adj. Channel Pwr. vs. Channel output Pwr. -30 -35 -35 -40 -40 -45 -45 dBc dBc -30 -50 -55 -40°C +25°C +85°C -60 -65 -70 IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power -50 -55 -40°C +25°C +85°C -60 -65 -70 6 8 10 12 14 16 6 dBm 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 3 8 10 dBm 12 14 16 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Typical RF Performance Over Lead Temperature In Tuned Application Circuit (Fig.1) |S | vs. Frequency 21 25 11 -10 |S11| (dB) |S21| (dB) |S | vs. Frequency 0 20 15 10 -20 -40°C +25°C +85°C -30 -40°C +25°C +85°C 5 0 -40 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 |S | vs. Frequency 12 -10 -40°C +25°C +85°C |S22| (dB) -30 -30 -40 3 4 5 6 7 8 9 10 22 -20 -25 2 6 -10 -20 1 5 |S | vs. Frequency 0 -15 0 4 Frequency (GHz) Frequency (GHz) |S12| (dB) ( Bias: ID= 80 mA Typ.) 7 8 9 10 -40°C +25°C +85°C 0 1 2 3 Frequency (GHz) 4 5 6 7 8 9 10 Frequency (GHz) NOTE: Full S-parameter data available at www.sirenza.com 4 RF in 1 SBW-5089 2 BW5 IN C1 3 Ω Elec. Len. = 13.1 Zθ θ = 50Ω RF out C1 C1 = 0.1pF 0805 AVX OUT SIRENZA MICRODEVICES ECB-100607 Rev B Substrate Material = Getek ML200C, 0 .031" thick, Er = 4.2, 1oz. cladding Copper Shims Figure 1. Tuned Application Circuit 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 4 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Fig. 2 Basic Application Circuit RBIAS Application Circuit Element Values ID VS 1000 pF 1 uF 100 RLDC CD Bias Inductor LC 1 SW-5089 3 VD 2 CB 500 850 1950 2400 3500 CB 1000 pF 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 100 pF 68 pF 22 pF 22 pF 15 pF LC 470 nH 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistance for ID = 80 mA 4 RF in Frequency (Mhz ) Reference Designator RF out CB Supply Voltage (VS ) (Volts) <7 7 7.5 8 9 10 12 Bias Resistance* (Ohms) N/R 26 33 39 52 64 89 * Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID Select RBIAS so that RBIAS + RLDC ~ the recommended bias resistance. Use 1% or 5 % tolerance resisistors or parallel combinations to attain the recommended bias resistance +/- 3%. RBIAS provides current stability over temperature. VS RBIAS 1 uF 1000 pF * N/R= No t Re c o m m e nd e d . C o nta c t S i r e nza te c hni c a l s up p o r t fo r guidance when available supply voltage is <7 V. CD BW5 Device Pin Out Guide LC Pin # Description 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. 3 RF OUT / DC BIAS RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. CB CB Function Part Identification Marking 2 3 1 2 3 3 1 The product qualification report may be dow nloaded at w w w.sirenza.com BW5Z 2 MSL 1 BW5 1 Moisture Sensitivity Level 4 3 Rating Class 1C 1 Parameter ESD Rating - Human Body Model (HBM) 4 2 Reliability & Qualification Information Lead Free RoHs Compliant Tin-Lead Part Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 303 South Technology Court Broomfield, CO 80021 Part Number P ackag e / L ead Composition R eel Siz e Devices / R eel SBW-5089 Tin-Lead 7" 1000 SBW-5089Z Lead Free, RoHs Compliant 7" 1000 EDS-103325 Rev. C 5 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier SOT-89 PCB Pad Layout Dimensions in inches [millimeters] RF IN RF OUT Notes: 1 Solder the copper pad on the backside of the device package to the ground plane. 2 Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 3 Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 4. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. SOT-89 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-89 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 6 Phone: (800) SMI-MMIC http://www.sirenza.com