SITI 42

42-DL211
Version
Issue Date
File Name
Total Pages
: A.005
: 2002/06/14
: SP-DL211-A.005.doc
:6
Optical Fiber Transmitting IC
新竹市科學園區展業一路 9 號 7 樓之 1
SILICON TOUCH TECHNOLOGY INC.
9-7F-1, Prosperity Road I, Science Based Industrial Park,
Hsin-Chu, Taiwan 300, R.O.C.
Fax:886-3-5645626
Tel:886-3-5645656
點晶科技股份有限公司
42-DL211
SILICON TOUCH TECHNOLOGY INC.
42-DL211
OPTICAL FIBER TRANSMITTING IC
GENERAL DESCRIPTION
42-DL211 is a driver IC designed for the application of high-speed optical fiber
transmission. It integrates the LED driver with constant current output to reduce the complexity
and the cost of the transmission module. 42-DL211 can transmit with the speed up to 13Mb/s.
42-DL211 are fabricated by using CMOS technology with low power consumption purpose.
FEATURES
1. TTL interface compatible
2. High speed (up to 13Mb/s)
3. Uniform output waveform
4. Constant current output
5. Low power consumption
6. Wide range for Supply Voltage (2.7V-5.5V)
BLOCK DIAGRAM And APPLICATION CIRCUIT
Power
42-DL211
OUT
VDD
Signal
IN
VSS
Ground
SP-DL211-A.005.doc
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點晶科技股份有限公司
42-DL211
SILICON TOUCH TECHNOLOGY INC.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Unit
Supply Voltage
VDD
-0.5 to +7
V
Input Voltage
VIN
-0.5 to VDD +0.5
V
Operating Temperature
Topr
-40 to +85
℃
Storage Temperature
Tstg
-55 to +100
℃
Electrostatic Damage
ESD
3.5
kV
Output Sinking Current
IOUT
50
mA
RECOMMENDED OPERATING CONDITIONS
ITEM
SYMBOL
MIN.
TYP.
MAX. UNIT
Supply Voltage
VDD
2.7
-
5.5
V
High Level Input Voltage
VIH
2.0
-
VDD
V
Low Level Input Voltage
VIL
0
-
0.8
V
ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25℃
℃, if not mentioned )
ITEM
SYMBOL
High Level Input Voltage
Low Level Input Voltage
VIH
VIL
VDD= 3V or 5V
VDD= 3V or 5V
2.0
0
-
VDD
0.8
V
V
Input Leakage Current
IIN
VIN=VDD or VSS
-
-
1
uA
IDDQ
VIN =VSS
VDD=3V or 5V,
VIN=VDD,
VFLED=2.0V
VDD=3V or 5V,
VOUT=3V,
VIN=VSS
VDD=3V,
CLED=15pF,
VFLED=2.0V
VDD=3 V,
CLED=15pF,
VFLED=2.0V
CLED=15pF,
VFLED=2.0V
CLED=15pF,
VFLED=2.0V
NRZ Code,
CLED=15pF,
VFLED=2.0V
-
1
3
mA
2.4
3
3.6
mA
-
-
5
uA
-
-
100
ns
-
-
10
ns
- 25
0
25
ns
1
25
ns
-
13
Mb/s
Quiescent Supply Current
Output Sinking Current
IOUT_ON
Output Leakage Current
IOUT_OFF
Propagation Delay
TPLH , TPHL
Rise Time, Fall Time of
IOUT
Tr, Tf
Pulse Width Distortion
Δtw
Jitter of Output Current
Δtj
Data Rate
FDATA
SP-DL211-A.005.doc
CONDITIONS MIN. TYP. MAX. UNIT
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點晶科技股份有限公司
42-DL211
SILICON TOUCH TECHNOLOGY INC.
PAD DESCRIPTIONS
PAD NO.
PAD NAME
DESCRIPTIONS
1
2
3
4
IN
VDD
OUT
VSS
Input Pad(Active High )
Supply Voltage
Output Pad Sinking Current(Active Low)
Ground
DIE CONFIGURATION
(510, 549)
1.
IN
Center (195.8, 445.85)
4.
Center (401.6, 449.85)
2. VDD
Center (102.15, 102.25)
VSS
3. OUT
Center (406.25, 102.2)
(0, 0)
Unit:
:um
Die Size: 510um * 549um
Die Thickness: 12mil(=300um)
Pad Size: 100um * 100um
* Note: SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical characteristics
and pad layouts.
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點晶科技股份有限公司
42-DL211
SILICON TOUCH TECHNOLOGY INC.
REQUIREMENTS FOR WAFER DELIVERY
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 12 mils(≒300um)
Malfunctioned die:Marked with red ink or equivalent marking
HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION
(1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during
moving, storing and processing 42-DL211.
(2) Process 42-DL211 in a clean room with proper temperature and humidity.
(3) Ground all working machines and workers wear anti-electrostatic ring to ground during
processing.
(4) Avoid contact 42-DL211with bare hands .If unavoided, wear anti-electrostatic ring and use
anti-electrostatic tool to pick it up.
GUARANTED TEMPERATURE AND RETENTION CYCLE
(1) The device/wafer 42-DL211 should be stored in the nitrogenous chest. The conditions suggested
are as follows:
Temperature = 23±3℃
Relative Humidity = 50±10%
Minimum nitrogen inflow = 3 liters/minute
(2) If the device/wafer, 42-DL211 is incidentally exposed to the air, use it for manufacturing as soon
as possible.
(3) Under the storage environment specified in item (1), six-month safe storage period is
guaranteed.
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點晶科技股份有限公司
42-DL211
SILICON TOUCH TECHNOLOGY INC.
The products listed herein are designed for ordinary electronic applications, such as
electrical appliances, audio-visual equipment, communications devices and so on. Hence,
it is advisable that the devices should not be used in medical instruments, surgical
implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention
equipment and the like. Misusing those products may directly or indirectly endanger
human life, or cause injury and property loss.
Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage
of the products mentioned above. Anyone who purchases any products described herein
with the above-mentioned intention or with such misused applications should accept full
responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all
their officers and employees shall defend jointly and severally against any and all claims
and litigation and all damages, cost and expenses associated with such intention and
manipulation.
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