42-DL312 Version : A.06 Issue Date : 2004-04-19 File Name : 42-DL312-A.06.doc Total Pages : 6 Optical Fiber Receiving IC 新竹市展業一路九號四樓之三 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Road I, Hsin-Chu, Taiwan, R.O.C. Fax：886-3-5645626 Tel：886-3-5645656 點晶科技股份有限公司 42-DL312 SILICON TOUCH TECHNOLOGY INC. 42-DL312 OPTICAL FIBER RECEIVING IC GENERAL DESCRIPTION 42-DL312 receiver is designed for the application of high-speed optical fiber transmission. As an OEIC, 42-DL312 integrates photo sensor, ATC (Automatic Threshold Control) and signal processing circuit for high-speed application, and is fabricated by using CMOS technology. 42-DL312 is designed to operate by positive logic in which the output voltage is set to high level when optical flux is received. FEATURES 1. Low jitter (Δtj: TYP. 1ns) 2. High speed (Up to 13.2Mb/s, NRZ signal) 3. Built-in photo sensor and signal processing circuit. 4. Built-in ATC (Automatic Threshold Control) circuit used for stabilized output at a wide range of optical power level BLOCK DIAGRAM And APPLICATION CIRCUIT VDD VDD 42-DL312 AVDD AMP DVDD COMP OUT ATC AVSS 42-DL312-A.06 DVSS -1- Version：A.06 點晶科技股份有限公司 42-DL312 SILICON TOUCH TECHNOLOGY INC. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) Item Symbol Rating Unit VDD -0.5 to +7 V P 100 mW Operating Temperature Topr -40 to +85 ℃ Storage Temperature Tstg -55 to +100 ℃ High Level Output Current IOH -1 mA Low Level Output Current IOL 20 mA Supply Voltage Power dissipation RECOMMENDED OPERATING CONDITIONS ITEM SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VDD 4.75 5.0 5.25 V High Level Output Current IOH - - -150 uA Low Level Output Current IOL - - 1.6 mA ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25℃ ) ITEM Peak sensitivity wavelength Maximum Input Optical Power for High level Minimum Input Optical Power for High level SYMBOL CONDITIONS λP - PCMAX PCMIN Current Consumption IDD High Level Output Voltage VOH Low Level Output Voltage VOL Rise Time Tr Fall Time Tf Pulse Width Distortion (note.1) Δtw Jitter Δtj Data Rate FDATA MIN. TYP. MAX. UNIT - 700 - nm -17.5 - - dBm - - -24 dBm - 5 10 mA 2.4 - VDD V 0 - 0.4 V - 4.5 6 ns - 4.5 6 ns -17 - 17 ns PC=-15dBm - 1 10 ns PC=-24dBm - - 10 ns 0.1 - 13.2 Mb/s Input optical wavelength=650nm Input optical wavelength=650nm VDD = 5V IOH = -0.15mA VDD= 5V IOL = -1.6mA CL=10pF CL=10pF Pulse width=165ns Pulse cycle=330ns, CL=10pF NRZ Code, Duty 50% Input Note.1 Between input of an optical fiber transmitting module and output of 42-DL312. 42-DL312-A.06 -2- Version：A.06 點晶科技股份有限公司 42-DL312 SILICON TOUCH TECHNOLOGY INC. PAD DESCRIPTIONS Pad Name VDD_A VDD_D VSS_A VSS_D OUT Size Center Coordinates (unit: um) 100um*100um ( 60, 728.15 ) 100um*100um ( 60, 60 ) 100um*100um ( 634.7, 72.4 ) 100um*100um ( 509.7, 72.4 ) 100um*100um ( 910.5, 72.4 ) I/O Power Power Ground Ground Output Description Analog Power Supply Digital Power Supply Analog Power Ground Digital Power Ground Signal Output DIE CONFIGURATION (970.5, 790.5) VDD_A Photo Sensor (648.2, 468,15) 42-DL312 VDD_D (0, 0) VSS_A VSS_D OUT Unit：um Die Size: 970.5um*790.5um PD Size: 250000um×1 The Center Coordinates of PD: (648.2um, 468.15um) * Note: SiTI reserves the right to alter the device geometry and manufacturing processes without prior notice. Though these alterations may result in geometrical changes, they will not affect die electrical characteristics and pad layouts in any sense. 42-DL312-A.06 -3- Version：A.06 點晶科技股份有限公司 42-DL312 SILICON TOUCH TECHNOLOGY INC. REQUIREMENTS FOR WAFER DELIVERY Material： Silicon with P-Substrate Diameter： 6 inches(≒15cm) Thickness： 12 mils(≒300um) Scribe Line Width： 110um Malfunctioned die：Marked with red ink or equivalent marking HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION (1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during moving, storing and processing 42-DL312. (2) Process 42-DL312 in a clean room with proper temperature and humidity. (3) Ground all working machines and workers wear anti-electrostatic ring to ground during processing. (4) Avoid contact 42-DL312with bare hands .If unavoided, wear anti-electrostatic ring and use anti-electrostatic tool to pick it up. GUARANTED TEMPERATURE AND RETENTION CYCLE (1) The device/wafer 42-DL312 should be stored in the nitrogenous chest. The conditions suggested are as follows: Temperature = 23±3℃ Relative Humidity = 50±10% Minimum nitrogen inflow = 3 liters/minute (2) If the device/wafer, 42-DL312 is incidentally exposed to the air, use it for manufacturing as soon as possible. (3) Under the storage environment specified in item (1), six-month safe storage period is guaranteed. 42-DL312-A.06 -4- Version：A.06 點晶科技股份有限公司 42-DL312 SILICON TOUCH TECHNOLOGY INC. The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned above. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and employees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation. 42-DL312-A.06 -5- Version：A.06