High Power SPDT Switch with Logic Control CXG1134AEN Description The CXG1134AEN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134AEN can be operated by one CMOS control line. The Sony GaAs JFET process is used for low insertion loss and on-chip logic circuit. (Applications : Cellular handsets ; PDC, CDMA) Features Low insertion loss : 0.25dB @900MHz, 0.35dB @1.9GHz High linearity : IIP3 (typ.) = 70dBm 1 CMOS compatible control line Small package size : 10-pin VSON Package 10 pin VSON (Plastic) Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) Bias voltage VDD 7 V Control voltage Vctl 5 V Operating temperature Topr – 35 to + 85 °C Storage temperature Tstg – 65 to + 150 °C This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E05606-CR CXG1134AEN Block Diagram and Recommended Circuit GND (recommended) Rctl (1kΩ ) CTL 6 5 7 4 Cbypass (100pF) Cbypass (100pF) GND VDD RF1 CRF (100pF) GND 8 GND 9 F1 F2 F3 GND 2 GND F4 10 RF2 3 1 CRF (100pF) RF3 CRF (100pF) GND (recommended) When using this IC, the following external parts should be used : Rctl : This resistor is used to improve ESD performance. 1kΩ is recommended. CRF : This capacitor is used for RF de-coupling and must be used for all applications. 100pF is recommended. Cbypass : This capacitor is used for DC line filtering. 100pF is recommended. Truth Table On Pass CTL F1 F2 F3 F4 RF1 – RF2 H ON OFF OFF ON RF1 – RF3 L OFF ON ON OFF (Ta = 25°C) DC Bias Condition Item Min. Typ. Max. Unit Vctl (H) 2.2 3.0 3.6 V Vctl (L) 0 — 0.4 V 2.7 3.0 3.6 V VDD -2- CXG1134AEN Electrical Characteristics (Ta = 25°C) Item Symbol Condition Insertion loss IL 900MHz Isolation ISO. 900MHz VSWR VSWR 900MHz 2fo Min. 28 Typ. Max. Unit 0.25 0.50 dB 32 dB 1.2 1.4 — *1 – 75 – 60 dBc 3fo *1 – 75 – 60 dBc 1dB compression input power P1dB VDD = 3.0V, 0/3V control Switching speed TSW Control current Ictl Bias current IDD Harmonics *1 32 35 dBm 2 5 µs Vctl (High) = 3V 10 30 µA VDD = 3V 50 100 µA Pin = 30dBm, 900MHz, VDD = 3.0V, 0/3V control -3- CXG1134AEN Package Outline (Unit : mm) 10PIN VSON(PLASTIC) + 0.1 0.8 – 0.05 0.6 2.5 0.05 S A 2.5 5 B 0.4 0.8 x2 0.35 ± 0.1 0.15 S B x4 0.15 S A B 0.03 ± 0.03 (Stand Off) 0.05 M S AB 0.225 ± 0.03 1 0.2 ± 0.01 PIN 1 INDEX 2.7 6 10 0.5 ± 0.2 0.35 ± 0.1 S Solder Plating 0.13 ± 0.025 + 0.09 0.14 – 0.03 TERMINAL SECTION NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.013g SONY CODE VSON-10P-01 LEAD PLATING SPECIFICATIONS ITEM -4- SPEC. LEAD MATERIAL COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm Sony Corporation