5W High Power Laser Diode SLD335F Description The SLD335F is a 5W high power laser diode designed to have a uniform emission area that is suitable for the applications for solid-state laser excitation, measurement, printing, etc. Features High-power Recommended optical power output Po = 5W High-optical power density: 5W/200μm (Emitting line width) Package M-S035 Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000h (effective value) at Po = 5W, Tc = 25°C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E07620-CR SLD335F Absolute Maximum Ratings (Tc = 25°C) Optical power output Pomax 5.5 W Reverse voltage VR 2 V Operating temperature Tc –10 to +30 °C Storage temperature Tstg –40 to +85 °C LD Warranty Reliability assurance does not apply to this product. Because of the nature of an open heat sink product, the product shall be handled with special care to avoid any damage by handling and atmosphere including dusts and hemidity. Quality shall be assured by proper atmosphere maintained by sealed packaging. Laser diodes naturally has differing lifetimes which follow a Weibull distribution. -2- SLD335F Electrical and Optical Characteristics (Tc = Case temperature, 25°C) Item Symbol Conditions Min. Typ. Max. Unit — 0.8 1.5 A Threshold current Ith Operating current Iop Po = 5W — 5.2 6.5 A Operating voltage Vop Po = 5W — 2.2 3.0 V Wavelength λp Po = 5W 805 — 811 nm Perpendicular θ⊥ Po = 5W 15 23 33 degree Parallel θ∥ Po = 5W 4 11 17 degree ΔX — — ±100 μm ΔY — — ±100 μm Radiation angle Positional accuracy Position Angle Differential efficiency Δφ∥ Po = 5W — — ±3 degree Δφ⊥ Po = 5W — — ±4 degree ηD Po = 5W 0.65 1.1 — W/A -3- SLD335F Notes On Handling Care should be taken for the following points when using this product. 1. This product corresponds to a Class 4 product under IEC60825-1 and JIS standard C6802 “Laser Product Emission Safety Standards”. LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION MAXIMUM OUTPUT WAVELENGTH Sony Corporation OVER 1 W 600 - 950 nm CLASS IV LASER PRODUCT AVOID EXPOSURE Laser radiation is emitted from this aperture. 1-7-1 Konan, Minato-ku, Tokyo 108-0075 Japan 2. Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. 3. Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. (1) Engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. (2) Managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. 4. Prevention of surge current and electrostatic discharge Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. Therefore, be extremely careful about overcurrent and electrostatic discharge. 5. Use for special applications This product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. Also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. 6. Environment-related Substances to be Controlled No substances classified at Level 1 (immediate ban) of Sony Technical Standard, SS-00259, “Management regulations for the Environment-related Substances to be Controlled”. The excerpt from SS-00259 is introduced on following URL. http://www.sony.net/SonyInfo/procurementinfo/ss00259/ -4- SLD335F Package Outline (Unit: mm) M-S035 6.35 ± 0.1 Cathode 1.8 1.0 1.8 0.7 φ2.3 ± 0. 1.4 ± 2.18 ± 0.1 3.98 ± 0.1 6.78 ± 0.1 0.15 φ4.4 ± epth 0.1 d 0.65 10.0 LD Chip 0.1 1 ho le Anode Lead Strength 0.5kgf SONY CODE PACKAGE MASS M-S035 1g EIAJ CODE JEDEC CODE -5- Sony Corporation