SLD335YT 4W High Power Laser Diode Description The SLD335YT has a package with a Peltier cooler and allows independent thermal and electric design. It realizes a uniform emission area by adopting a new chip structure. Features • High-optical power output Recommended optical power output: Po = 4.0W • High-optical power density: 4W/200µm (Emitting line width) M-288 Equivalent Circuit TE Cooler Applications • Solid state laser excitation • Material processing • Measurement • Printing Case LD PD TH Structure AlGaAs Quantum Well structure laser diode 1 3 4 5 6 7 8 9 10 Operating Lifetime MTTF 10,000H (effective value) at Po = 4W, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C) • Optical power output Pomax 4.4 2 • Reverse voltage VR LD PD 15 • Operating temperature (Tth) Topr –10 to +30 • Storage temperature Tstg –40 to +85 W V V °C °C Pin Configuration (Top View) No. Function No. Function 1 TE cooler (negative) 6 Thermistor 2 — 7 Laser diode (cathode) 3 Case 8 Photo diode (anode) 4 Laser diode (anode) 9 Photo diode (cathode) 5 Thermistor 10 TE cooler (positive) Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E03840 SLD335YT Electrical and Optical Characteristics Item Symbol (Tth = Thermistor temperature, Tth = 25°C) Conditions Min. Typ. Max. Unit — 0.8 1.5 A Threshold current Ith Operating current Iop Po = 4.0W — 4.3 5.5 A Operating voltage Vop Po = 4.0W — 2.1 3.0 V Wavelength λp Po = 4.0W 790 — 840 nm 4 10 17 degree 15 23 33 degree — — ±3 degree — — ±4 degree — — ±100 µm Radiation angle Parallel θ// Perpendicular θ⊥ Positional accuracy Angle Position ∆φ// ∆φ⊥ Po = 4.0W Po = 4.0W ∆X, ∆Y Differential efficiency ηD Po = 4.0W 0.65 1.1 — W/A Monitor current Imon Po = 4.0W, VR = 10V 0.15 0.9 3.0 mA Thermistor resistance Rth Tth = 25°C — 10 — kΩ –2– SLD335YT Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 4 product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION MAXIMUM OUTPUT WAVELENGTH OVER 1 W 600 - 950 nm CLASS IV LASER PRODUCT Sony Corporation AVOID EXPOSURE Laser radiation is emitted from this aperture. 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan (2) Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, always use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. 1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. Managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) Prevention of surge current and electrostatic discharge Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. Therefore, be extremely careful about overcurrent and electrostatic discharge. (5) Use for special applications This product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. Also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. –3– SLD335YT Package Outline Unit: mm M-288 + 0.08 4 – φ4.04 – 0.03 31.75 ± 0.50 R1 1.0 .0 .0 R1 4 – – 4 Window Glass φ5.0 12.8 19.05 ± 0.15 38.60 ± 0.15 9 – φ1.0 2.54 44.45 ± 0.50 0.9 MAX LD Chip 3.0 Reference Plane 17.8 ± 0.3 17.0 26.4 14.9 ± 0.3 3.6 31.75 ± 0.50 19.30 ± 0.15 SONY CODE M-288 EIAJ CODE JEDEC CODE PACKAGE MASS –4– 100g Sony Corporation