VRF141 VRF141MP 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 80 V • 30:1 Load VSWR Capability at Specified Operating Conditions • 150W with 22dB Typical Gain @ 30MHz, 28V • Nitride Passivated • 150W with 13dB Typical Gain @ 175MHz, 28V • Refractory Gold Metallization • Excellent Stability & Low IMD • High Voltage Replacement for MRF141 • Common Source Configuration • RoHS Compliant • Available in Matched Pairs Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF141(MP) Unit 80 V Continuous Drain Current @ TC = 25°C 20 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 300 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) Min VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Typ Max 0.9 1.0 80 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 60V, VGS = 0V) 1.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 1.0 μA gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.60 °C/W Max Unit mhos Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Symbol Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 400 Coss Output Capacitance VDS = 28V 375 Crss Reverse Transfer Capacitance f = 1MHz 50 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com pF 050-4942 Rev D 9-2010 Dynamic Characteristics VRF141(MP) Functional Characteristics Symbol Parameter GPS f 1= 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP GPS f1 = 175MHz, VDD = 28V, IDQ = 250mA, Pout = 150W Min Typ 16 20 Max dB 13 η f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 250mA, Pout = 150WPEP 40 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP ψ f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles 45 -30 1 Unit % -28 -60 dB No Degradation in Output Power Class A Characteristics Symbol Test Conditions Min Typ GPS f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP 23 IMD(d3) f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP -50 IMD(d9-d13) f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP -75 Max dB 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 60 40 13V 250μs PULSE TEST<0.5 % DUTY CYCLE 35 50 TJ= -55°C 10V 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 9V 30 8V 7V 20 6V 10 5V 25 0 V TJ= 125°C 15 10 5 4V 0 TJ= 25°C 20 0 5 10 15 20 25 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 100 100 Ciss 10 Crss 1 050-4942 Rev D 9-2010 ID, DRAIN CURRENT (V) C, CAPACITANCE (pF) Coss IDMax 10 Pdmax Rds(on) TJ = 125°C TC = 75°C 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 1 1 10 Unit 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Typical Performance Curves VRF141(MP) 0.6 D = 0.9 0.5 0.7 0.4 0.5 Note: 0.3 0.3 0.2 t1 t2 0.1 0 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.7 t1 = Pulse Duration 0.1 t 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10 1.0 250 −20 Vdd=28V, Idq = 250mA, Freq=150MHz Vdd=28V, Idq = 250mA, Freq=30MHz −25 −30 OUTPUT POWER (WPEP) IM3 IM5 −35 −40 150 100 0 25 50 75 100 125 150 175 200 225 Pout, OUTPUT POWER (WATTS PEP) Figure 6. IMD versus POUT 0 0 1 2 3 Pout, INPUT POWER (WATTS PEP) Figure 7. PIN versus POUT 4 250 Vdd=28V, Idq = 250mA, Freq=175MHz 200 150 100 50 0 0 5 10 15 20 Pout, INPUT POWER (WATTS PEP) Figure 7. PIN versus POUT 25 050-4942 Rev D 9-2010 −50 200 50 −45 OUTPUT POWER (WPEP) IMD, INTERMODULATION DISTORTION (dB) RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration VRF141(MP) 30 MHz test Circuit 050-4942 Rev D 9-2010 175 MHz test Circuit VRF141(MP) Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.900 - 2.975 M 3.650 - 3.725 B 2.975 - 3.050 N 3.725 - 3.800 C 3.050 - 3.125 P 3.800 - 3.875 D 3.125 - 3.200 R 3.875 - 3.950 E 3.200 - 3.275 S 3.950 - 4.025 F 3.275 - 3.350 T 4.025 - 4.100 G 3.350 - 3.425 W 4.100 - 4.175 H 3.425 - 3.500 X 4.175 - 4.250 J 3.500 - 3.575 Y 4.250 - 4.325 K 3.575 - 3.650 Z 4.325 - 4.400 VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%. M174 Package Outline .5” SOE All Dimensions to be ±.005” A U M DIM 1 M Q 4 R PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN 2 B 3 D K 050-4942 Rev D 9-2010 H E C Seating Plane MILLIMETERS MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 M J INCHES MIN 11.0 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.