PN4143 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN4143 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN4143 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 ICEX Collector Cutoff Current VCE = 30 V, VOB = 0.5 V 50 nA IBL Base Cutoff Current VCE = 30 V, VOB = 0.5 V 50 nA V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 10 V, I C = 100 µA VCE = 10 V, I C = 1.0 mA VCE = 10 V, I C = 10 mA VCE = 10 V, I C = 150 mA VCE = 10 V, I C = 500 mA VCE = 1.0 V, IC = 150 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA 35 50 75 100 30 50 300 0.4 1.6 1.3 2.6 V V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 100 kHz 8.0 pF Cib Input Capacitance VEB = 2.0 V, f = 100 kHz 30 pF hfe Small-Signal Current Gain IC = 50 mA, VCE = 20 V, f = 100 MHz 2.0 SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 150 mA, 45 ns td Delay Time I B1 = 15 mA 10 ns tr Rise Time 40 ns toff Turn-off Time VCC = 30 V, IC = 150 mA 100 ns ts Storage Time I B1 = IB2 = 15 mA 80 ns tf Fall Time 30 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% PN4143 PNP General Purpose Amplifier