KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W (TC=25°C) • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Voltage Value 30 Units V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current 3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 500µA, IE = 0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 30 BVEBO Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 5 Typ. Max. Units V V ICBO Collector Cut-off Current VCB = 20V, IE = 0 1.0 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1.0 µA hFE1 hFE2 DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 2.5A 70 25 240 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.8 V VBE(on) Base-Emitter ON Voltage VCE = 2V, IC = 0.5A 0.75 1.0 V fT Current Gain Base Width Product VCE = 2V, IC = 0.5A 100 MHz Cob Output Capacitance VCB = 10V, IE =0, f = 1MHz 35 pF hFE Classification Classification O Y hFE1 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC1173 Typical Characteristics 4.5 1000 VCE = 2V IC[A], COLLECTOR CURRENT 4.0 hFE, DC CURRENT GAIN 3.5 IB = 40mA IB = 30mA 3.0 IB = 20mA 2.5 IB = 15mA 2.0 IB = 10mA 1.5 IB = 8mA 1.0 100 IB = 5mA 0.5 IB = 3mA 0.0 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 10 0.01 7.2 0.1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 4.5 VCE=2V IC = 10 IB 1 IC(A), COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 V BE(sat) 0.1 VCE (sat) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.01 0.01 0.1 0.0 0.0 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VBE(V), BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10 IE=0 f=1MHz Cob[pF], CAPACITANCE IC[A], COLLECTOR CURRENT IC MAX(Pulse) 10 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International 100 1ms *50ms Thermal limitation Tc=25℃ 1 S/B Limitation *Single Pulse 0.1 1 *10ms IC MAX(DC) 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSC1173 Typical Characteristics (Continued) 16 PD[W], POWER DISSIPATION 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC1173 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E