UltraFET FDA2712 tm N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ Features Description • • • • • • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant Applications • PDP application D G G DS TO-3PN S MOSFET Maximum Ratings Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC ±30 V A 44 (Note 1) 240 A (Note 2) 245 mJ 4.5 V/ns (Note 3) (TC = 25oC) Units V 64 -Continuous (TC = 100oC) - Pulsed Ratings 250 357 W 2.85 W/oC -55 to +150 oC o 300 C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation FDA2712 Rev. A Ratings 0.35 40 1 Units o C/W www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET April 2007 Device Marking FDA2712 Device FDA2712 Package TO-3PN Reel Size N/A Tape Width N/A Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 250 - - V ID = 250μA, Referenced to 25oC - 0.2 - V/oC - - 1 μA - - 500 μA - ±100 nA Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 250V VGS = 0V IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - 3.0 3.9 5.0 V - 29.2 34 mΩ - 43 - S TJ = 125oC On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 40A gFS Forward Transconductance VDS = 10V, ID = 40A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 125V, ID = 80A VGS = 10V (Note 4, 5) - 7650 10175 pF - 550 735 pF - 105 155 pF - 99 129 nC - 46 - nC - 21 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 125V, ID = 80A VGS = 10V, RGEN = 25Ω (Note 4, 5) - 128 266 ns - 371 751 ns - 143 295 ns - 210 429 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 80 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 240 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 80A - - 1.2 V trr Reverse Recovery Time - 175 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 80A dIF/dt = 100A/μs - 1.17 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 22.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 80A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA2712 Rev. A 2 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 300 ID,Drain Current[A] ID,Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 100 Figure 2. Transfer Characteristics 1000 10 100 o 150 C o -55 C o 25 C 10 * Notes : 1. 250μs Pulse Test * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1000 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance VGS = 10V 0.04 VGS = 20V 6 8 VGS,Gate-Source Voltage[V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.08 0.06 4 VGS = 0V o 150 C 100 o 25 C 10 o 0.02 * Note : TJ = 25 C 0 50 100 150 ID, Drain Current [A] 1 0.3 200 Figure 5. Capacitance Characteristics Ciss Capacitances [pF] 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 Coss 4000 2000 0 0.1 FDA2712 Rev. A Crss * Note: 1. VGS = 0V 2. f = 1MHz Figure 6. Gate Charge Characteristics 30 3 VDS = 50V VDS = 125V VDS = 200V 8 6 4 2 0 1 10 VDS, Drain-Source Voltage [V] 1.5 10 VGS, Gate-Source Voltage [V] 10000 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] * Note : ID = 80A 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 40A 0.5 0.0 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 1000 80 100 100μs 10 ID, Drain Current [A] ID, Drain Current [A] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1ms Operation in This Area is Limited by R DS(on) 1 10ms 100ms * Notes : o 0.1 200 60 40 20 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 400 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 0 Thermal Response [ZθJC] 10 0.5 10 0.2 PDM 0.1 0.05 10 -2 t1 0.02 o 1. Zθ JC(t) = 0.35 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -3 10 -5 t2 * Notes : 0.01 10 FDA2712 Rev. A -1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 10 1 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Typical Performance Characteristics (Continued) FDA2712 N-Channel UltraFET Trench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA2712 Rev. A 5 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA2712 Rev. A 6 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET Mechanical Dimensions TO-3PN FDA2712 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I25 FDA2712 Rev. A 8 www.fairchildsemi.com FDA2712 N-Channel UltraFET Trench MOSFET tm