KSA1156 KSA1156 High Voltage Switching Low Power Switching Regulator DC-DC Converter • High Breakdown Voltage • Low Collector Saturation Voltage • High Speed Switching TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings - 400 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage - 400 V -7 IB V Base Current - 0.25 A IC Collector Current (DC) - 0.5 A ICP Collector Current (Pulse) -1 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = - 100mA, IB = - 10mA L = - 20mH Min. - 400 VCEX(sus) Collector-Emitter Sustaining Voltage IC = - 200mA, IB1 = - IB2 = - 20mA VBE(off)= 5V, L = 10mH - 400 Max. Units V V ICBO Collector Cut-off Current VCB = - 400V, IE = 0 - 100 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA ICEX1 Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V - 100 µA ICEX2 Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V TC= 125°C -1 mA hFE DC Current Gain VCE = - 5V, IC = - 100mA VCE(sat) Collector-Emitter Saturation Voltage IC = - 100mA, IB = - 10mA -1 V VBE(sat) Base-Emitter Saturation Voltage IC = - 100mA, IB = - 10mA - 1.2 V tON Turn On Time µs Storage Time 4 µs tF Fall Time VCC = - 150V, IC = - 100mA IB1= - 10mA , IB2 = 20mA RL = 1.5KΩ 1 tSTG 1 µs 30 200 hFE Classification Classification N R O Y hFE 30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1156 Typical Characteristics -0.5 1000 VCE = -5V Pulse Test IB = -180mA -0.4 IB = -160mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -200mA IB = -140mA -0.3 IB = -120mA IB = -100mA -0.2 IB = -80mA IB = -60mA IB = -40mA -0.1 100 10 IB = -20mA -0.0 -0 -2 -4 -6 -8 1 -0.1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 -1000 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -10 10 DI s S D LIM SIPA C ITE TIO N D -0.1 ㎲ 0㎲ M IT VCE(sat) 10 LI -0.1 1m ED -0.01 -1E-3 -0.01 -0.1 -1 -10 -100 -1 -1000 -10 -100 VCEOMAX. V BE(sat) -1 IC MAX. (Pulse) -1 b IC[A], COLLECTOR CURRENT IC = 10 IB S/ VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Safe Operating Area -250 160 120 dT(%),IcDERATING IC(mA), COLLECTOR CURRENT 140 -200 -150 -100 100 S/b 80 Di ss 60 40 -50 ip a Lim ited tio n Li m ite d 20 -0 0 -0 -100 -200 -300 -400 -500 VCE (v), COLLECTOR EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 6. Derating Curve of Safe Operating Areas Rev. A, February 2000 KSA1156 Typical characteristics (Continued) 16 PC[W], POWER DISSIPATION 14 12 10 8 6 4 2 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1156 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E