B5817W-B5819W SCHOTTKY BARRIER DIODE PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode SOD-123 + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - Pb-free; RoHS-compliant MARKING: B5817W: SJ B5818W: SK B5819W: SL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @TA=25 oC Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS Reverse Voltage IO 1 A Peak forward surge current @=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 250 mW RθJA 500 K/W TSTG -65~+150 ℃ Average Rectified Output Current Thermal Ambient Resistance Storage temperature 08/04/2007 Rev.1.00 Junction to www.SiliconStandard.com 1 B5817W-B5819W ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Symbol Test conditions IR= 1mA Reverse breakdown voltage Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817W Forward voltage VF B5818W B5819W Diode capacitance 08/04/2007 Rev.1.00 B5817W B5818W B5819W B5817W B5818W B5819W V(BR) CD MIN MAX 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz www.SiliconStandard.com UNIT 120 mA V V V pF 2 B5817W-B5819W TYPICAL CHARACTERISTICS 08/04/2007 Rev.1.00 www.SiliconStandard.com 3 B5817W-B5819W Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/04/2007 Rev.1.00 www.SiliconStandard.com 4