SMAJ Series Transient Voltage Suppressors PRODUCT SUMMARY Stand-off Voltage ratings from 5.0V to 440V Peak pulse power 400W in SMA surface-mount package FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) Low profile package with built-in strain relief for surface-mount Glass passivated junction Low incremental surge resistance, excellent clamping capability Peak pulse power capability of 400W with a 10/1000us waveform, repetition rate (duty cycle): 0.01% (300W above 78V) Very fast response time High temperature soldering guaranteed: 260°C for 10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AC (SMA) molded plastic over passivated chip Terminals: Matte-Sn plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting position: Any Weight: 0.002oz., 0.064g Pb-free; RoHS-compliant Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SMAJ10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS Rating at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit P PPM 400 W IPPM See Next Table A IFSM 40 Peak pulse power dissipation with a 10/1000us waveform (1,2) (see Fig. 1) Peak pulse current with a 10/1000us waveform (1) Peak forward surge current, 8.3ms single half sine-wave uni-directional only (2) Typical thermal resistance, junction to ambient (3) Typical thermal resistance, junction to lead Operating junction and storage temperature range Notes: A RθJA 120 o RθJL 30 o TJ, TSTG -55 to +150 C/W C/W o C 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2. Rating is 300W above 78V 2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal 3. Mounted on minimum recommended pad layout 9/21/2006 Rev.4.01 www.SiliconStandard.com 1 of 4 SMAJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Breakdow n voltage V(BR) (Volts) (1) Stand-off voltage VWM (Volts) Maximum reverse leakage at VWM ID(3) (uA) Maximum peak pulse surge current IPPM(2) (A) Maximum clamping voltage at IPPM VC (Volts) 9.6 Device type UNI BI Min. Max. Test current at IT (mA) SMAJ5.0 AD WD 6.40 7.82 10 5.0 800 41.7 AE WE 6.40 7.07 10 5.0 800 43.5 9.2 SMAJ6.0 AF WF 6.67 8.15 10 6.0 800 35.1 11.4 SMAJ5.0A (5) SMAJ6.0A AG WG 6.67 7.37 10 6.0 800 38.8 10.3 SMAJ6.5 AH WH 7.22 8.82 10 6.5 500 32.5 12.3 SMAJ6.5A AK WK 7.22 7.98 10 6.5 500 35.7 11.2 SMAJ7.0 AL WL 7.78 9.51 10 7.0 200 30.1 13.3 12.0 SMAJ7.0A AM WM 7.78 8.60 10 7.0 200 33.3 SMAJ7.5 AN WN 8.33 10.2 1.0 7.5 100 28.0 14.3 SMAJ7.5A AP WP 8.33 9.21 1.0 7.5 100 31.0 12.9 SMAJ8.0 AQ WQ 8.89 10.9 1.0 8.0 50 26.7 15.0 SMAJ8.0A AR WR 8.89 9.83 1.0 8.0 50 29.4 13.6 SMAJ8.5 AS WS 9.44 11.5 1.0 8.5 10 25.2 15.9 SMAJ8.5A AT WT 9.44 10.4 1.0 8.5 10 27.8 14.4 SMAJ9.0 AU WU 10.0 12.2 1.0 9.0 5.0 23.7 16.9 SMAJ9.0A AV WV 10.0 11.1 1.0 9.0 5.0 26.0 15.4 SMAJ10 AW WW 11.1 13.6 1.0 10 1.0 21.3 18.8 SMAJ10A AX WX 11.1 12.3 1.0 10 1.0 23.5 17.0 SMAJ11 AY WY 12.2 14.9 1.0 11 1.0 19.9 20.1 SMAJ11A AZ WZ 12.2 13.5 1.0 11 1.0 22.0 18.2 22.0 SMAJ12 BD XD 13.3 16.3 1.0 12 1.0 18.2 SMAJ12A BE XE 13.3 14.7 1.0 12 1.0 20.1 19.9 SMAJ13 BF XF 14.4 17.6 1.0 13 1.0 16.8 23.8 SMAJ13A BG XG 14.4 15.9 1.0 13 1.0 18.6 21.5 SMAJ14 BH XH 15.6 19.1 1.0 14 1.0 15.5 25.8 SMAJ14A BK XK 15.6 17.2 1.0 14 1.0 17.2 23.2 SMAJ15 BL XL 16.7 20.4 1.0 15 1.0 14.9 26.9 SMAJ15A BM XM 16.7 18.5 1.0 15 1.0 16.4 24.4 SMAJ16 BN XN 17.8 21.8 1.0 16 1.0 13.9 28.8 SMAJ16A BP XP 17.8 19.7 1.0 16 1.0 15.4 26.0 SMAJ17 BQ XQ 18.9 23.1 1.0 17 1.0 13.1 30.5 SMAJ17A BR XR 18.9 20.9 1.0 17 1.0 14.5 27.6 SMAJ18 BS XS 20.0 24.4 1.0 18 1.0 12.4 32.2 SMAJ18A BT XT 20.0 22.1 1.0 18 1.0 13.7 29.2 SMAJ20 BU XU 22.2 27.1 1.0 20 1.0 11.2 35.8 SMAJ20A BV XV 22.2 24.5 1.0 20 1.0 12.3 32.4 SMAJ22 BW XW 24.4 29.8 1.0 22 1.0 10.2 39.4 SMAJ22A BX XX 24.4 26.9 1.0 22 1.0 11.3 35.5 SMAJ24 BY XY 26.7 32.6 1.0 24 1.0 9.3 43.0 SMAJ24A BZ XZ 26.7 29.5 1.0 24 1.0 10.3 38.9 SMAJ26 CD YD 28.9 35.3 1.0 26 1.0 8.6 46.6 SMAJ26A CE YE 28.9 31.9 1.0 26 1.0 9.5 42.1 SMAJ28 CF YF 31.1 38.0 1.0 28 1.0 8.0 50.0 SMAJ28A CG YG 31.1 34.4 1.0 28 1.0 8.8 45.4 SMAJ30 CH YH 33.3 40.7 1.0 30 1.0 7.5 53.5 SMAJ30A CK YK 33.3 36.8 1.0 30 1.0 8.3 48.4 Notes: 9/21/2006 Rev.4.01 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For the bidirectional SMAJ5.0CA, the maximum V(BR) is 7.25V. www.SiliconStandard.com 2 of 4 SMAJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Stand-off voltage VWM (Volts) Maximum reverse leakage at VWM ID(3) (uA) Maximum peak pulse surge current IPPM(2) (A) Maximum clamping voltage at IPPM VC (Volts) Device type UNI BI Min. Max. Test current at IT (mA) SMAJ33 CL YL 36.7 44.9 1.0 33 1.0 6.8 59.0 SMAJ33A CM YM 36.7 40.6 1.0 33 1.0 7.5 53.3 SMAJ36 CN YN 40.0 48.9 1.0 36 1.0 6.2 64.3 SMAJ36A CP YP 40.0 44.2 1.0 36 1.0 6.9 58.1 SMAJ40 CQ YQ 44.4 54.3 1.0 40 1.0 5.6 71.4 SMAJ40A CR YR 44.4 49.1 1.0 40 1.0 6.2 64.5 SMAJ43 CS YS 47.8 58.4 1.0 43 1.0 5.2 76.7 SMAJ43A CT YT 47.8 52.8 1.0 43 1.0 5.8 69.4 SMAJ45 CU YU 50.0 61.1 1.0 45 1.0 5.0 80.3 SMAJ45A CV YV 50.0 55.3 1.0 45 1.0 5.5 72.7 SMAJ48 CW YW 53.3 65.1 1.0 48 1.0 4.7 85.5 SMAJ48A CX YX 53.3 58.9 1.0 48 1.0 5.2 77.4 SMAJ51 CY YY 56.7 69.3 1.0 51 1.0 4.4 91.1 SMAJ51A CZ YZ 56.7 62.7 1.0 51 1.0 4.9 82.4 SMAJ54 RD ZD 60.0 73.3 1.0 54 1.0 4.2 96.3 SMAJ54A RE ZE 60.0 66.3 1.0 54 1.0 4.6 87.1 SMAJ58 RF ZF 64.4 78.7 1.0 58 1.0 3.9 103 SMAJ58A RG ZG 64.4 71.2 1.0 58 1.0 4.3 93.6 SMAJ60 RH ZH 66.7 81.5 1.0 60 1.0 3.7 107 SMAJ60A RK ZK 66.7 73.7 1.0 60 1.0 4.1 96.8 SMAJ64 RL ZL 71.1 86.9 1.0 64 1.0 3.5 114 SMAJ64A RM ZM 71.1 78.6 1.0 64 1.0 3.9 103 125 SMAJ70 RN ZN 77.8 95.1 1.0 70 1.0 3.2 SMAJ70A RP ZP 77.8 86.0 1.0 70 1.0 3.5 113 SMAJ75 RQ ZQ 83.3 102 1.0 75 1.0 3.0 134 SMAJ75A RR ZR 83.3 92.1 1.0 75 1.0 3.3 121 SMAJ78 RS ZS 86.7 106 1.0 78 1.0 2.9 139 126 SMAJ78A RT ZT 86.7 95.8 1.0 78 1.0 3.2 SMAJ85 RU ZU 94.4 115 1.0 85 1.0 2.0 151 SMAJ85A RV ZV 94.4 104 1.0 85 1.0 2.2 137 160 SMAJ90 RW ZW 100 122 1.0 90 1.0 1.9 SMAJ90A RX ZX 100 111 1.0 90 1.0 2.1 146 SMAJ100 RY ZY 111 136 1.0 100 1.0 1.7 179 162 SMAJ100A RZ ZZ 111 123 1.0 100 1.0 1.9 SMAJ110 SD VD 122 149 1.0 110 1.0 1.5 196 SMAJ110A SE VE 122 135 1.0 110 1.0 1.7 177 SMAJ120 SF VF 133 163 1.0 120 1.0 1.4 214 SMAJ120A SG VG 133 147 1.0 120 1.0 1.6 193 SMAJ130 SH VH 144 176 1.0 130 1.0 1.3 231 SMAJ130A SK VK 144 159 1.0 130 1.0 1.4 209 268 SMAJ150 SL VL 167 204 1.0 150 1.0 1.1 SMAJ150A SM VM 167 185 1.0 150 1.0 1.2 243 SMAJ160 SN VN 178 218 1.0 160 1.0 1.0 287 259 SMAJ160A SP VP 178 197 1.0 160 1.0 1.2 SMAJ170 SQ VQ 189 231 1.0 170 1.0 0.99 304 SMAJ170A SR VR 189 209 1.0 170 1.0 1.09 275 292 SMAJ180A ST VT 201 222 1.0 180 1.0 1.4 SMAJ200A SV VV 224 247 1.0 200 1.0 1.2 324 SMAJ220A SX VX 246 272 1.0 220 1.0 1.1 356 SMAJ250A SZ VZ 279 309 1.0 250 1.0 1.0 405 SMAJ300A TE UE 335 371 1.0 300 1.0 0.8 486 SMAJ350A TG UG 391 432 1.0 350 1.0 0.7 567 SMAJ400A TK UK 447 494 1.0 400 1.0 0.6 648 SMAJ440A TM UM 492 543 1.0 440 1.0 0.6 713 Notes: 9/21/2006 Rev.4.01 Breakdow n voltage V(BR) (Volts) (1) 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For parts without A, the VBR is +10% www.SiliconStandard.com 3 of 4 SMAJ Series RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 9/21/2006 Rev.4.01 www.SiliconStandard.com 4 of 4