RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Features General Description ■ Single positive-supply operation with low power and shutdown modes The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded efficiency and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. ■ 39% CDMA/WCDMA efficiency at +28 dBm average output power ■ 52% AMPS mode efficiency at +31 dBm output power ■ Compact lead-free compliant LCC package (3.0 X 3.0 x 1.0 mm) ■ Internally matched to 50 Ohms and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance requirements ■ Meets HSDPA performance requirements ■ Alternative pin-out to Fairchild RMPA0965 Device Functional Block Diagram (Top View) MMIC Vref 1 Vmode 2 RF IN 3 Vcc1 4 8 GND 7 RF OUT 6 GND 5 Vcc2 DC Bias Control Output Match Input Match (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation RMPA0967 Rev. E 1 www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module April 2005 Parameter Supply Voltages Reference Voltage Power Control Voltage Symbol Value Units Vcc1, Vcc2 5.0 V Vref 2.6 to 3.5 V Vmode 3.5 V RF Input Power Pin +10 dBm Storage Temperature Tstg -55 to +150 °C Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Parameter Operating Frequency C Symbol Min f Typ 824 Max Units 849 MHz Comments CDMA Operation Small-Signal Gain Power Gain Linear Output Power PAEd (digital) @ +28dBm SSg 28 dB Po = 0dBm Gp 29 dB Po = +28dBm; Vmode = 0V 27 dB Po = +16dBm; Vmode Po 28 dBm Vmode = 0V 16 dBm Vmode PAEd PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm High Power Total Current Itot Low Power Total Current ±1.98MHz Offset P 2.0V 39 % Vmode = 0V 9 % Vmode P 2.0V Vmode P 2.0V, Vcc = 1.4V 25 % 480 mA Po = +28dBm, Vmode = 0V 130 mA Po = +16dBm, Vmode Adjacent Channel Power Ratio ±885KHz Offset P 2.0V P 2.0V IS-95 A/B Modulation ACPR1 ACPR2 -50 dBc Po = +28dBm; Vmode = 0V -52 dBc Po = +16dBm; Vmode -60 dBc Po = +28dBm; Vmode = 0V -70 dBc Po = +16dBm; Vmode P 2.0V P 2.0V AMPS Operation Gain Gp 28 PAEa 52 VSWR 2.0:1 NF 4 dB Receive Band Noise Power Rx No -137 dBm/Hz Po Harmonic Suppression3 2fo-5fo -30 dBc Po -60 dBc Power-Added Efficiency (analog) Po = +31dBm % Po = +31dBm General Characteristics Input Impedance Noise Figure Spurious Outputs2, 3 S Ruggedness w/ Load Mismatch3 Case Operating Temperature 2.5:1 10:1 Tc -30 O +28dBm; 869 to 894MHz O +28dBm Load VSWR < 5.0:1 No permanent damage. 85 °C DC Characteristics P 2.0V Quiescent Current Iccq 60 mA Vmode Reference Current Iref 5 8 mA Po Icc(off) 1 5 µA No applied RF signal. Shutdown Leakage Current O +28dBm Notes: 1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR otherwise noted. 2. All phase angles. 3. Guaranteed by design. 2 RMPA0967 Rev. E O 1.2:1, unless www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Absolute Ratings1 RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod 33 -40 32 -42 -44 -46 30 ACPR1(dBc) Gain (dB) 31 29 28 27 -48 -50 -52 -54 -56 26 -58 836.5 -60 824 849 836.5 849 Frequency (MHz) Frequency (MHz) RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod 45 -50 44 -52 43 -54 42 -56 ACPR2(dBc) PAE(%) 25 824 41 40 39 38 -58 -60 -62 -64 37 -66 36 -68 35 824 836.5 -70 824 849 Frequency (MHz) 836.5 849 Frequency (MHz) RMPA0967 Cellular 3x3mm2 PAM Vcc=3.4 V, Vref=2.85V, Vmode=0V, Pout=28 dBm, IS-95 Mod 500 490 480 Icc(mA) 470 460 450 440 430 420 410 400 824 836.5 849 Frequency (MHz) 3 RMPA0967 Rev. E www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Performance Data In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACPR1 of –52dBc and ACPR2 of less than –61dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. Recommended Operating Conditions Parameter Operating Frequency Supply Voltage Reference Voltage (operating) Symbol Min f 824 Vcc1, Vcc2 3.0 3.4 Vref 2.7 2.85 (shutdown) Bias Control Voltage (low-power) 0 Vmode (high-power) Linear Output Power (high-power) 1.8 0 Pout (low-power) Case Operating Temperature Typical Tc -30 2.0 Max Units 849 MHz 4.2 V 3.1 V 0.5 V 3.0 V 0.5 V +28 dBm +16 dBm +85 °C DC Turn On Sequence 1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2.0V (Pout < 16 dBm) 4 RMPA0967 Rev. E www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Efficiency Improvement Applications 5 7 1 4 2 0967 XYTT Z 5 8 6 6 3 Materials QTY ITEM NO. PART NUMBER DESCRIPTION VENDOR 1 1 F100010 V1 PC, BOARD FAIRCHILD 2 2 #142-0701-841 SMA CONNECTOR JOHNSON #2340-5211TN TERMINALS 3M ASSEMBLY, RMPA0967 FAIRCHILD 7 3 REF 4 2 5 GRM39X7R102K50V 1000pF CAPACITOR (0603) MURATA 2 5 (ALT) ECJ-1VB1H102K 1000pF CAPACITOR (0603) PANASONIC 2 6 C3216X5R1A335M 3.3µF CAPACITOR (1206) TDK 1 7 GRM39Y5V104Z16V 0.1µF CAPACITOR (0603) MURATA 1 7 (ALT) ECJ-1VB1C104K 0.1µF CAPACITOR (0603) PANASONIC 1 8 GRM39X7R331K50V 330 pF CAPACITOR (0603) MURATA A/R 9 SN63 SOLDER PASTE INDIUM CORP. A/R 100 SN96 SOLDER PASTE INDIUM CORP. Evaluation Board Schematic 0.1 µF Vref 1000 pF SMA1 RF IN 8 2 7 3 50 Ohm TRL 4 0967 XYTT Z Vmode 1 6 5 Vcc2 Vcc1 3.3 µF 1000 pF 9 330 pF (package base) 5 RMPA0967 Rev. E SMA2 RF OUT 50 Ohm TRL 3.3 µF www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Evaluation Board Layout I/O 1 INDICATOR TOP VIEW 8 1 3 0967 XYTT Z 2 3.00 +.100 –.050 mm SQ. 4 7 6 0 XY 967 T Z T 5 FRONT VIEW 1.10mm MAX. 4X R.20mm 4 5 3 6 2 BACK SIDE SOLDER MASK 0.40mm 1 2.65mm 2 1 SEE DETAIL A 0.80mm 7 9 0.40mm 0.10mm 0.40mm 0.10mm 8 1.40mm DETAIL A TYP. 0.175mm BOTTOM VIEW Signal Descriptions Pin # Signal Name 1 Vref 2 Vmode 3 RF In RF Input Signal 4 Vcc1 Supply Voltage to Input Stage 5 Vcc2 Supply Voltage to Output Stage 6 GND 7 RF Out 8 GND Description Reference Voltage High-Power/Low-Power Mode Control Ground RF Output Signal Ground 6 RMPA0967 Rev. E www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Package Outline Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. • Reflow Profile – Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 12°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150°C. – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220°C, with a maximum limit of 225°C. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. – Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. • Device Usage: Fairchild recommends the following procedures prior to assembly. – Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. – Assemble the dry-baked devices within 7 days of removal from the oven. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. – During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C – If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. Recommended Solder Reflow Profile 240 10 SEC 220 200 183°C 180 160 140 DEG (°C) 120 100 1°C/SEC SOAK AT 150°C FOR 60 SEC 80 45 SEC (MAX) ABOVE 183°C 1°C/SEC 60 40 20 0 0 60 120 180 240 300 TIME (SEC) 7 RMPA0967 Rev. E www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Application Information The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 RMPA0967 Rev. E www.fairchildsemi.com RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module TRADEMARKS