SSM4816SM
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
Simple drive requirement
MOSFET-1 BV DSS
S1/D2
S1/D2
Suitable for DC-DC Converters
R DS(ON)
22mΩ
ID
MOSFET-2 BV DSS
R DS(ON)
ID
6.7A
30V
13mΩ
11.5A
S1/D2
D1
Fast switching performance
SO-8
G2
S2/A
S2/A
G1
Description
30V
Advanced Power MOSFETs from Silicon Standard provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D1
G1
The SO-8 package is widely preferred for commercial and
industrial surface mount applications and is well suited for
low voltage applications such as DC/DC converters.
N-channel
MOSFET 1
S1/D2
Schottky Diode
G2
N-channel
MOSFET 2
Absolute Maximum Ratings
Symbol
Drain-Source Voltage
VGS
Gate-Source Voltage
I D @ TA=25°C
ID @ TA=70°C
Rating
Parameter
VDS
Units
MOSFET-1
MOSFET-2
30
30
V
±20
±20
V
3
6.7
11.5
A
3
5.3
9.2
A
30
40
A
Continuous Drain Current
Continuous Drain Current
S2/A
1
IDM
Pulsed Drain Current
PD @ TA=25°C
Total Power Dissipation
1.4
2.4
W
Linear Derating Factor
0.01
0.02
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-a (MOSFET-1)
Rthj-a (MOSFET-2)
Rthj-a (Schottky)
Rev.1.01 4/16/2004
Units
Value
Parameter
Typ.
Max.
Thermal Resistance Junction-ambient
3
70
90
°C/W
Thermal Resistance Junction-ambient
3
42
53
°C/W
Thermal Resistance Junction-ambient
3
52
60
°C/W
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SSM4816SM
o
MOSFET-1 Electrical Characteristics @ Tj=25 C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/ °C
VGS=10V, ID=6A
-
-
22
mΩ
VGS=4.5V, ID=5A
-
-
30
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=6A
-
10
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=6A
-
11
18
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
22
-
ns
tf
Fall Time
RD=15Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
780
1250
pF
Coss
Output Capacitance
VDS=25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.25
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Rev.1.01 4/16/2004
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SSM4816SM
MOSFET-2 Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/°C
VGS=10V, ID=11A
-
-
13
mΩ
VGS=4.5V, ID=8A
-
-
18.5
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C,ID=1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Max. Units
VDS=10V, ID=11A
-
15
-
S
o
VDS=30V, VGS=0V
-
-
100
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
1
mA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=8A
-
20
30
nC
Qgs
Gate-Source Charge
VDS=24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
VDS=15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
31
-
ns
tf
Fall Time
RD=15Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Gate Resistance
f=1.0MHz
-
1.5
-
Ω
Min.
Typ.
IS=1A, VGS=0V
-
-
0.5
V
IS=8A, VGS=0V
-
27
-
ns
dI/dt=100A/µs
-
18
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
Rev.1.01 4/16/2004
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SSM4816SM
o
Schottky Specifications @ Tj=25 C (unless otherwise specified)
Min.
Typ.
VF
Symbol
Forward Voltage Drop
IF=1.0A
-
0.47
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=30V
-
0.004
0.2
mA
Maximum Reverse Leakage Current
Vr=30V,Tj=100°C
-
0.5
1
mA
Junction Capacitance
Vr=10V
-
66
-
pF
CT
Rev.1.01 4/16/2004
Parameter
Test Conditions
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Max. Units
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SSM4816SM
MOSFET-1
120
80
T A =25 o C
100
10V
TA=150oC
70
10V
7.0V
80
ID , Drain Current (A)
ID , Drain Current (A)
60
7.0V
60
5.0V
4.5V
40
50
40
5.0V
4.5V
30
20
V G =3.0V
20
V G =3.0V
10
0
0
0
1
2
3
4
5
0
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
32
1.8
ID=5A
I D =6A
V G =10V
1.6
o
T A =25 C
Normalized RDS(ON)
28
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
24
1.4
1.2
1.0
20
0.8
16
0.6
3
5
7
9
11
-50
0
50
T j ,Junction Temperature (
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
o
150
C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
6
2.5
5
2
T j =150 o C
3
VGS(th) (V)
IS(A)
4
T j =25 o C
1.5
2
1
1
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Rev.1.01 4/16/2004
1.4
-50
0
50
100
T j ,Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM4816SM
MOSFET-1
f=1.0MHz
1000
16
C iss
12
V DS =15V
V DS =20V
V DS =24V
8
C oss
C (pF)
VGS , Gate to Source Voltage (V)
I D =6A
100
C rss
4
0
10
0
5
10
15
20
25
1
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
1
10ms
100ms
0.1
1s
DC
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
ID (A)
13
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =125°C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Rev.1.01 4/16/2004
Charge
Q
Fig 12. Gate Charge Waveform
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SSM4816SM
MOSFET-2
125
180
10V
o
T A =150 C
7.0V
100
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
o
T A = 25 C
150
120
90
5.0V
4.5V
60
75
5.0V
4.5V
50
V G = 3.0V
25
V G = 3.0V
30
0
0
0
1
2
3
4
5
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
4
5
Fig 2. Typical Output Characteristics
1.6
20
I D = 11 A
V G =10V
ID=8A
18
1.4
o
Normalized R DS(ON)
T A =25 C
RDS(ON) (m Ω )
1
V DS , Drain-to-Source Voltage (V)
16
14
1.2
1.0
0.8
12
0.6
10
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
10.00
2.0
1.9
o
o
T j =150 C
IS(A)
VGS(th) (V)
1.00
T j =25 C
1.8
1.7
0.10
1.6
0.01
1.5
0.1
0.3
0.5
0.7
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Rev.1.01 4/16/2004
1.1
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM4816SM
MOSFET-2
f=1.0MHz
16
10000
VGS , Gate to Source Voltage (V)
I D =8A
V DS =15V
V DS =20V
V DS =24V
C (pF)
12
8
C iss
1000
C oss
C rss
4
100
0
0
10
20
30
40
1
50
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
1ms
ID (A)
10
10ms
100ms
1
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factore=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=100°C/W
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Rev.1.01 4/16/2004
Charge
Q
Fig 12. Gate Charge Waveform
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SSM4816SM
Schottky
10
10
IR , Reverse Current (mA)
1
IF , Forward Current (A)
30V
0.1
24V
0.01
0.001
0.0001
o
o
T j =150 C
T j =25 C
1
0
25
50
75
100
125
0
0.3
0.6
0.9
1.2
1.5
T j , Junction Temperature ( C)
V F , Forward Voltage Drop (V)
Fig 1. Reverse Current vs Junction Temperature
Fig 2. Typical Forward Characteristics
o
f=1.0MHz
C ,Capacitance (pF)
1000
100
10
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 3. Typical Junction Capacitance
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without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
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Rev.1.01 4/16/2004
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