SSM9972GI
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
60V
R DS(ON)
18mΩ
ID
35A
DESCRIPTION
The SSM9972GI achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general switching circuits.
Pb-free; RoHS-compliant TO-220CFM
The SSM9972GI is in TO-220CFM for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
G
D
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
S
TO-220CFM (suffix I)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
±25
V
ID
Continuous drain current, TC = 25°C
35
A
22
A
120
A
31
W
0.25
W/°C
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘ JC
Parameter
RΘ JA
Maximum thermal resistance, junction-ambient
Maximum thermal resistance, junction-case
Value
Units
4
°C/W
62
°C/W
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
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SSM9972GI
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID= 250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.06
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=23A
-
-
18
mΩ
VGS=4.5V, ID=12A
-
-
22
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=23A
-
40
-
S
IDSS
Drain-source leakage current
VDS=60V, VGS=0V
-
-
10
uA
VDS=48V ,VGS=0V, Tj = 150°C
-
-
25
uA
VGS=±25V
-
-
±100
nA
ID=23A
-
35
56
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=48V
-
9.5
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
20
-
nC
VDS=30V
-
12
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=35A
-
37
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
47
-
ns
tf
Fall time
RD=0.86Ω
-
59
-
ns
Ciss
Input capacitance
VGS=0V
-
3160 5060
pF
Coss
Output capacitance
VDS=25V
-
280
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
IS= 23A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
Test Conditions
Max. Units
VSD
Forward voltage
t rr
Reverse recovery time
IS=23A, VGS=0V,
-
36
-
ns
Q rr
Reverse recovery charge
dI/dt=100A/µs
-
45
-
nC
2
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM9972GI
120
120
10V
7.0V
10V
7.0V
o
T C = 150 C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
90
o
90
5.0V
4.5V
60
5.0V
4.5V
60
30
V G =3.0V
30
V G =3.0V
0
0
0
0
2
4
6
8
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
I D = 12 A
T C =25 o C
I D =23A
V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
18
16
1.2
1.0
0.8
14
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
20
1.7
IS(A)
T j =150 o C
Normalized VGS(th) (V)
15
T j =25 o C
10
1.2
0.7
5
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
Fig 5. Forward Characteristic of
Reverse Diode
9/20/2006 Rev.3.1
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9972GI
f=1.0MHz
12
10000
V DS =48V
V DS =38V
V DS =30V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 23 A
10
6
1000
4
C oss
C rss
2
0
100
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
o
T C =25 C
Single Pulse
1
DC
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V
80
ID , Drain Current (A)
T j =25 o C
QG
T j =150 o C
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
9/20/2006 Rev.3.1
Fig 12. Gate Charge Waveform
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SSM9972GI
PHYSICAL DIMENSIONS - TO-220CFM
E
A
SYMBOLS
c2
φ
L4
Millimeters
MIN
NOM
MAX
A
4.30
4.60
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00 10.40
L4
14.70 15.40 16.10
φ
e
----
3.20
----
----
2.54
----
1. All dimensions are in millimeters.
b1
A1
b
c
2. Dimension do not include mold protrusions.
e
PART MARKING - TO-220
PACKING:
Moisture sensitivity level MSL3
1000pcs in tubes packed inside a
moisture barrier bag (MBB).
9972GI
YWWSSS
PART NUMBER: 9972GI = SSM9972GI
DATE/LOT CODE:
Y = last digit of the year
WW = work week (01 -> 52)
SSS = lot code sequence
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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