SSOUSA SDR4150

Solid State Devices, Inc.
SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
300 mA
50 - 125 VOLTS
4.5 - 6.0 nsec HYPER FAST RECOVERY
Designer’s Data Sheet
Part Number/Ordering Information 1/
RECTIFIER
SDR____ __ __
│
│
│
│
│
│
│
│
│
│
│
└
│ └ Screening 2/
│
__ = Not Screened
│
TX = TX Level
│
TXV = TXV
│
S = S Level (for SM, use –S)
│
└ Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab
(MELF)
SMS = Surface Mount Square Tab
Device Type ( VRWM )
6638 = 125 V
6642 = 75 V
6643 = 50 V
4150 = 75 V
FEATURES:
•
•
•
•
•
•
•
•
Hyper Fast Reverse Recovery Time 4.5 - 6 ns
Max
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Available in Axial, Subminiature Round Tab
& Subminiature Square Tab Versions
2/
TX, TXV, and S-Level Screening Available
Replacement for 1N6638, 1N6642, 1N6643, &
1N4150-1
Metallurgical Class 3 Bond
MAXIMUM RATINGS 3/
RATING
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SYMBOL
VALUE
UNIT
VRWM
VR
125
75
50
75
Volts
IO
300
mAmps
IFSM
2.5
Amps
TOP and TSTG
-65 to +175
°C
RθJE
RθJL
100
325
°C/W
SDR6638
SDR6642
SDR6643
SDR4150
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
Operating & Storage Temperature
Thermal Resistance
SM and SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
NOTES:
1/ For Ordering Information, Price, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Axial Leaded
SM
DATA SHEET #: RC0126B
SMS
DOC
SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
3/
CHARACTERISTICS
SDR6638
SDR6642
SDR6643
SDR4150
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C) @ IF = 10mA
Maximum Instantaneous Forward Voltage Drop (Pulsed)
SDR6638 @ IF = 200mA
SDR6642 @ IF = 100mA
SDR6643 @ IF = 100mA
SDR4150 @ IF = 100mA
IF = 100mA, TA = -55°C
SDR6638
SDR6642
SDR6643
SDR4150
SDR6638 @ VR = 20V
SDR6642 @ VR = 20V
SDR6643 @ VR = 20V
SDR4150 @ VR = 50V
SDR6638 @ VR = 100V
SDR6642 @ VR = 75V
SDR6643 @ VR = 50V
Minimum Breakdown Voltage
Ir = 100 μA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SDR6638 @ VR = 20V
SDR6642 @ VR = 20V
SDR6643 @ VR = 20V
SDR4150 @ VR = 50V
SDR6638 @ VR = 100V
SDR6642 @ VR = 75V
SDR6643 @ VR = 50V
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SDR6638
SDR6642
SDR6643
SDR4150
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
SDR6638
SDR6642
SDR6643
SDR6638
SDR6642
SDR6643
SDR4150
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
Maximum Reverse Recovery Time
(IF = IR = 10 mA, IRR = 1 mA)
SYMBOL
LIMIT
UNIT
VF1
0.8
0.8
1.0
0.74
Vdc
VF2
VF3
BVR
IR1
IR2
IR3
IR4
CJ1
CJ2
trr
1.1
1.2
1.2
0.92
1.3
125
100
75
75
35
25
50
100
500
500
500
50
50
75
100
100
100
160
Vdc
Vdc
Vdc
nA
nA
μA
μA
2.5
5.0
5.0
2.5
2.0
2.8
2.8
4.5
5.0
6.0
4.0
AXIAL
SM
SMS
DIMENSIONS
DIMENSIONS
DIMENSIONS
pf
pf
nsec
DIM
MIN
MAX
DIM
MIN
MAX
DIM
MIN
MAX
A
.056”
.080”
A
.056”
.064”
A
.070”
.085”
B
.130”
.180”
B
.130”
.146”
B
.180”
.210”
C
1.00”
1.50”
C
.010”
.022”
C
.022”
.028”
D
.018”
.022”
D
.001”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0126B
DOC