STANSON ST3406S23RG

ST3406
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
SOT-23-3L
z
3
z
D
z
G
S
1
2
1.Gate
2.Source
z
z
30V/5.4A, RDS(ON) = 26mΩ(Typ.)
@VGS = 10V
30V/4.6A, RDS(ON) = 36mΩ
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3.Drain
PART MARKING
SOT-23-3L
3
A6YA
1
Y: Year Code
2
A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST3406S23RG
SOT-23-3L
A6YA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※ ST3406S23RG
S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
ST3406
N Channel Enhancement Mode MOSFET
5.4A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
ID
5.4
3.2
A
IDM
25
A
Continuous Source Current (Diode Conduction)
IS
1.7
A
TA=25℃
TA=70℃
PD
2.0
1.3
W
TJ
150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
90
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Operation Junction Temperature
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
ST3406
N Channel Enhancement Mode MOSFET
5.4A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
V(BR)DSS
VGS=0V,ID=-250uA
30
VGS(th)
VDS=VGS,ID=250uA
1.0
IGSS
Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V
3.0
V
VDS=0V,VGS=±20V
±100
nA
VDS=24V,VGS=0V
1
10
Zero Gate Voltage Drain
Current
IDSS
VDS=24V,VGS=0V
TJ=55℃
On-State Drain Current
ID(on)
VDS≧5V,VGS=4.5V
Drain-source On-Resistance
RDS(on)
VGS=10V,ID=4.0A
VGS=4.5V,ID=3.6A
26
36
Forward Transconductance
gfs
VDS=4.5V,ID=5.4A
12
Diode Forward Voltage
VSD
IS=1.7A,VGS=0V
0.8
1.2
Total Gate Charge
Qg
10
18
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=15V
VGS=10V
ID≣6.7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=15V
VGS=0V
F=1MHz
450
240
38
Turn-On Time
td(on)
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
7
15
10
20
20
40
11
20
10
uA
A
33
41
mΩ
S
V
Dynamic
Turn-Off Time
tr
td(off)
tf
1.6
nC
3.1
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
ST3406
N Channel Enhancement Mode MOSFET
5.4A
TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
ST3406
N Channel Enhancement Mode MOSFET
5.4A
TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1
ST3406
N Channel Enhancement Mode MOSFET
5.4A
SOT-23-3L PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST3406 2006. V1