STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. FEATURE PIN CONFIGURATION SOP-8 z z z z z -40V/-5.6A, RDS(ON) = 55mΩ @VGS = -10V -40V/-5.2A, RDS(ON) = 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STP9547S8RG SOP-8P STP9547 STP9547S8TG SOP-8P STP9547 ※ Process Code : A ~ Z ; a ~ z ※ STP9547S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STP9547S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 STP9547 P Channel Enhancement Mode MOSFET - 6.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V ID -6.8 -5.2 A IDM -30 A IS -2.3 A PD 2.5 1.6 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 STP9547 P Channel Enhancement Mode MOSFET - 6.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -40 VGS(th) VDS=VGS,ID=250uA -1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage V -3.0 V VDS=0V,VGS=±20V ±100 nA VDS=-24V,VGS=0V -1 IDSS VDS=-24V,VGS=0V TJ=85℃ -5 ID(on) VDS=-5V,VGS=-4.5V RDS(on) VGS=-10V,ID=-5.6A VGS=-4.5V,ID=-5.2A 47 62 gfs VDS=-15V,ID=-5.6V 13 VSD IS=-2.3A,VGS=0V -0.8 -1.2 16 24 -10 uA A 60 80 mΩ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≡-3.5A 2.3 nC 4.5 Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss 75 Turn-On Time td(on) tr 14 25 16 26 Turn-Off Time td(off) tf 43 70 30 52 680 VDS ==-15V,VGS=0V f=1MHz VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 120 pF nS 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 STP9547 P Channel Enhancement Mode MOSFET - 6.8A TYPICAL CHARACTERICTICS 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 STP9547 P Channel Enhancement Mode MOSFET - 6.8A TYPICAL CHARACTERICTICS 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 STP9547 P Channel Enhancement Mode MOSFET - 6.8A TYPICAL CHARACTERICTICS 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1 STP9547 P Channel Enhancement Mode MOSFET - 6.8A PACKAGE OUTLINE SOP-8P 7 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9547 2007. Rev.1