ST13003-K High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic ballast for fluorescent lighting (CFL) ■ SMPS for battery charger 3 2 1 SOT-32 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Figure 1. Internal schematic diagram It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Part number Marking Package Packaging ST13003-K 13003 SOT-32 Bag July 2008 Rev 2 1/10 www.st.com 10 Electrical ratings 1 ST13003-K Electrical ratings Table 2. Absolute maximum rating Symbol Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs) V(BR)EBO V 1.5 A 3 A Base current 0.75 A IBM Base peak current (tP < 5ms) 1.5 A Ptot Total dissipation at Tc = 25°C 40 W Tstg Storage temperature -55 to 150 °C 150 °C IC ICM IB TJ 2/10 Parameter Collector current Collector peak current (tP < 5ms) Max. operating junction temperature ST13003-K 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter ICES Collector cut-off current (VBE = 0) V(BR)EBO Emitter-Base breakdown voltage (IC = 0) Test conditions VCE(sat) Collector-emitter saturation voltage Typ. VCE =700V VCE =700V TC = 125°C IE =10mA 9 Collector-emitter VCEO(sus) (1) sustaining voltage (I = 0) IC =10mA B (1) Min. hFE Base-emitter saturation voltage _ IB = 0.1A _ _ IB = 0.25A DC current gain Resistive load tr Rise time ts Storage time tf Fall time ts Inductive load Storage time IC = 0.5A IC = 1A 1 5 mA mA 18 V V IC = 1.5A _ _ IB = 0.5A VBE(sat) (1) Unit 400 IC = 0.5A IC = 1A Max. _ IB = 0.1A _ _ IB = 0.25A 0.5 1 1.5 V V V 1 1.2 V V IC =0.5A VCE =2V 8 20 IC =1A VCE =2V 5 25 VCC = 125V IC = 1A IB1 = 0.2A IB2 = -0.2A Tp = 25µs IC = 1A IB1 = 0.2A VBE =-5V L =50mH 0.8 1 µs 4 µs 0.7 µs µs VClamp =300V 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% 3/10 Electrical characteristics 2.1 4/10 ST13003-K Electrical characteristics (curves) Figure 2. Safe operating areas Figure 3. Derating curves Figure 4. Output characteristics Figure 5. Reverse biased safe operating areas Figure 6. DC current gain Figure 7. DC current gain ST13003-K Electrical characteristics Figure 8. Collector-emitter saturation voltage Figure 9. Base-emitter saturation voltage Figure 10. Inductive load switching time Figure 11. Resistive load switching time 2.2 Test circuits Figure 12. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 5/10 Electrical characteristics Figure 13. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 6/10 ST13003-K ST13003-K 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data ST13003-K SOT-32 (TO-126) MECHANICAL DATA DIM. A mm. MIN. TYP 2.4 MAX. 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 P 2.9 Q Q1 7.8 16 3.2 3.8 1 1.52 H2 2.15 I 1.27 0016114E 8/10 ST13003-K 4 Revision history Revision history Table 4. Document revision history Date Revision Changes 23-May-2007 1 Initial release. 09-Jul-2008 2 Added Table 1 on page 1. 9/10 ST13003-K Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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