B ® BTA/BTB16 series 1!!!!!!!!! !!!! !!16A Triacs logic level ! MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 600, 700 and 800 V G A1 A2 IGT (Q1) 10 to 50 mA A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ... The snubberless versions (BTA/BTB...W and T16 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734). G D2PAK (T16-G) A2 A1 A2 G A1 A2 G TO-220AB (BTB16) TO-220AB Insulated (BTA16) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Value D2²PAK Unit A Tc = 100°C TO-220AB 16 TO-220AB Ins. Tc = 85°C F = 60 Hz t = 16.7 ms 168 F = 50 Hz t = 20 ms 160 tp = 10 ms A 144 A²s F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C + 100 O 1/4 BTA/BTB16 series !!!!!!!!!!!!!!!!!16A Triacs logic level ! ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol IGT (1) VGT Test Conditions RL = 33 Ω VD = 12 V VGD VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT Quadrant RL = 3.3 kΩ Tj = 125°C T16 ■ Unit T1635 SW CW BW 35 10 35 50 mA I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V I - III MAX. 35 15 35 50 mA MAX. 50 25 50 70 mA 60 30 60 80 MIN. 500 40 500 1000 V/µs - 8.5 - - A/ms - 3.0 - - 8.5 - 8.5 14 II dV/dt (2) BTA/BTB16 VD = 67 % VDRM gate open Tj = 125°C (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C (dV/dt)c = 10 V/µs Tj = 125°C Without snubber Tj = 125°C MIN. STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) Quadrant RL = 33 Ω VD = 12 V VGT VGD VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 3.3 kΩ Tj = 125°C BTA/BTB16 25 50 50 100 Unit MAX. ALL MAX. 1.3 V ALL MIN. 0.2 V I - III - IV VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 7 A/ms B I - II - III IV Tj = 125°C mA MAX. 25 50 mA MAX. 40 60 mA 80 120 MIN. 200 400 V/µs MIN. 5 10 V/µs Value Unit II dV/dt (2) C STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 22.5 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 25 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 2 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2/4 BTA/BTB16 series !!!!!!!!! !!!!!! !!!16A Triacs logic level ! OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA/BTB16-xxxyz BTA/BTB16xxxyz 2.3 g 250 Bulk BTA/BTB16-xxxyzRG BTA/BTB16-xxxyz 2.3 g 50 Tube T1635-xxxG T1635xxxG 1.5 g 50 Tube T1635-xxxG-TR T1635xxxG 1.5 g 1000 Tape & reel Note: xxx = voltage, y = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). 20 18 16 14 12 10 8 6 4 2 0 Fig. 2-1: RMS on-state current versus case temperature (full cycle). P (W) IT(RMS) (A) IT(RMS) (A) 0 2 4 6 8 10 12 14 16 Fig. 2-2: D²PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 µm), full cycle. 18 16 14 12 10 8 6 4 2 0 BTB/T16 BTA Tc(°C) 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. IT(RMS) (A) K=[Zth/Rth] 4.0 1E+0 2 D PAK 2 (S=1cm ) 3.5 Zth(j-c) 3.0 2.5 1E-1 2.0 Zth(j-a) 1.5 1.0 0.5 0.0 tp (s) Tamb(°C) 0 25 50 75 100 125 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/4 BTA/BTB16 series !!!!!!!!!!!!!!!!!!16A Triacs logic level ! Fig. 4: values) On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITM (A) ITSM (A) 200 Tj max 100 10 Tj=25°C Tj max: Vto = 0.85 V Rd = 25 mΩ VTM (V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 180 160 140 120 100 80 60 40 20 0 t=20ms One cycle Non repetitive Tj initial=25°C Repetitive Tc=85°C Number of cycles 1 10 100 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] ITSM (A), I²t (A²s) 2.5 3000 Tj initial=25°C 2.0 IGT dI/dt limitation: 50A/µs 1000 1.5 IH & IL 1.0 ITSM 0.5 I²t Tj(°C) tp (ms) 100 0.01 0.10 1.00 10.00 Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). 0.0 -40 0 20 40 60 80 100 120 140 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6 2.0 1.8 5 SW C 1.6 1.4 -20 4 B 1.2 BW/CW/T1635 1.0 3 2 0.8 0.6 0.4 0.1 1 (dV/dt)c (V/µs) 1.0 10.0 100.0 0 Tj (°C) 0 25 50 75 100 125 4/4