s ® BTA/BTB06 Series 6A TRIACS S MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IG (Q1) 5 to 50 G A1 A2 mA DESCRIPTION Suitable for AC switching operations, the BTA/ BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,... The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards . A1 A2 G A1 A2 G TO-220AB (BTB06) TO-220AB Insulated (BTA06) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t Parameter RMS on-state current (full sine wave) Value TO-220AB Tc = 110°C Unit A 6 Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) TO-220AB Ins. Tc = 105°C F = 50 Hz t = 20 ms 60 F = 60 Hz t = 16.7 ms 63 I²t Value for fusing tp = 10 ms A 21 A² s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range A 1 BTA/BTB06 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol IGT (1) VGT Test Conditions Quadrant RL = 30 Ω VD = 12 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT BTA/BTB06 SW CW BW 5 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 I - II - III MIN. 0.2 MAX. I - III 10 MAX. II dV/dt (2) (dI/dt)c (2) ■ Unit TW 15 mA V V 35 50 mA mA 10 25 50 70 15 30 60 80 VD = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 1000 V/µs MIN. A/ms (dV/dt)c = 0.1 V/µs Tj = 125°C 2.7 3.5 - - (dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4 - - Without snubber Tj = 125°C - - 3.5 5.3 STANDARD (4 Quadrants) Symbol Test Conditions IG (1) VD = 12 V Quadrant RL = 30 Ω VGT VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL IG = 1.2 IGT BTA/BTB06 25 50 50 100 Unit MAX. ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. I - III - IV VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 2.7 A/ms B I - II - III IV 25 MAX. Tj = 125°C mA 50 mA mA 40 50 80 100 MIN. 200 400 V/µs MIN. 5 10 V/µs II dV/dt (2) C STATIC CHARACTERISTICS Symbol Test Conditions VT (2) ITM = 5.5 A Vto (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Tj = 125°C Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2 MAX. BTA/BTB06 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). P (W) IT(RMS) (A) 8 7 7 6 BTB 6 BTA 5 5 4 4 3 3 2 2 0 1 IT(RMS)(A) 1 0 1 2 3 4 5 0 6 Fig. 3: Relative variation of thermal impedance versus pulse duration. Tc(°C) 0 25 Fig. 4: values). 50 On-state 75 100 characteristics 125 (maximum ITM (A) K=[Zth/Rth] 100 1E+0 Tj max. Vto = 0.85 V Rd = 60 mΩ Zth(j-c) 1E-1 Tj=Tj max 10 Zth(j-a) VTM(V) tp(s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1 0.5 1E+2 5E+2 Fig. 5: Surge peak on-state current versus number of cycles. 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) ITSM (A) 1000 70 60 Tj initial=25°C t=20ms 50 dI/dt limitation: 50A/µs One cycle ITSM Non repetitive Tj initial=25°C 40 100 30 Repetitive Tc=105°C 20 I²t 10 0 tp (ms) Number of cycles 1 10 100 10 0.01 1000 3 0.10 1.00 10.00 BTA/BTB06 Series Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.5 2.4 2.2 2.0 1.8 1.6 1.4 SW 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 2.0 IGT 1.5 IH & IL 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 BW/CW (dV/dt)c (V/µs) 1.0 10.0 100.0 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types (dI/dt)c [Tj] / (dI/dt)c [Tj specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 TW 6 5 4 3 2 1 (dV/dt)c (V/µs) 1.0 Tj(°C) 10.0 0 100.0 4 0 25 50 75 100 125