IRFZ44N ! N-CHANNEL Power MOSFET APPLICATION FEATURES Ultra Low ON Resistance Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application RDS(ON) Max. VDSS 55V 17.5mȍ Low Gate Charge Dynamic dv/dt Rating ID Inductive Switching Curves 50A Peak Current vs Pulse Width Curve PIN CONFIGURATION SYMBOL TO-220 D SOURCE DRAIN GATE Front View G S 1 2 N-Channel MOSFET 3 ʳ ABSOLUTE MAXIMUM RATINGS Rating Symbol Drain to Source Voltage Drain to Current Ё Continuous Tc = 25к, VGS@10V Ё Continuous Tc = 100к, VGS@10V Ё Pulsed Tc = 25к, VGS@10V (Note 1) Value VDSS 55 V ID 50 A ID 35 IDM 160 Gate-to-Source Voltage Ё Continue VGS ±20 Total Power Dissipation PD .94 Operating Junction and Storage Temperature Range V W 0.63 W/к dv/dt 5.0 V/ns TJ, TSTG -55 to 175 к Derating Factor above 25к Peak Diode Recovery dv/dt (Note 3) Unit Repetitive Avalanche Energy (Note 1) EAR 9.4 mJ Maximum Lead Temperature for Soldering Purposes TL 300 к TPKG 260 к IAR 25 A Maximum Package Body for 10 seconds Avalanche Current (Note 1) THERMAL RESISTANCE Symbol RșJC Parameter Junction-to-case RșJA Junction-to-ambient Min Typ Max 1.5 Units к/W 62 к/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175к 1 cubic foot chamber, free air Page 1 IRFZ44N ! N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRFZ44N................................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. cIRFZ44N Characteristic Symbol Min VDSS 55 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage ... V (VGS = 0 V, ID = 250 µA) ӔVDSS/ǻTJ Breakdown Voltage Temperature Coefficient .V/к 0.058 (Reference to 25к, ID = 1mA) Drain-to-Source Leakage Current IDSS µA (VDS = 55 V, VGS = 0 V, TJ = 25к) 25 (VDS = 44 V, VGS = 0 V, TJ = 150к) 250 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage 2.0 ...4.0 V (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance RDS(on) (Note 4) mȍ (VGS = 10 V, ID = 25A) 17.5 Forward Transconductance (VDS = 25 V, ID = 25A) (Note 4) gFS 19 S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Ciss 1470 Coss 360 pF pF Crss 88 pF (VDS = 44 V, ID = 25 A, Qg .63 VGS = 10 V) (Note 2) Qgs 14 .nC nC Qgd 23 nC td(on) .12 trise 60 .. ns ns td(off) .................44 ns tfall .................45 ns (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Gate-to-Drain (“Miller”) Charge Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 28 V, ID = 25 A, VGS = 10 V, RG = 12ȍ) (Note 4) Source-Drain Diode Characteristics Continuous Source Current (Body Diode) (Note 1) Pulse Source Current (Body Diode) Diode Forward On-Voltage (IS = 25A, VGS = 0 V) (Note 4) Reverse Recovery Time (IF = 25A, VGS = 0 V, Reverse Recovery Charge IS ...............50 ISM ...............160 A VSD ...............1.3 V trr 63...............95. ns Qrr 170..............260 nC A Integral pn-diode in MOSFET di/dt = 100A/µs) (Note 4) Notes: Q Repetitive rating; pulse width limited by S ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C max. junction temperature. (See fig. 1) R Essentially independent of operating temerpature T Pulse width ≤ 400µs; duty cycle ≤ 2%. U V Page 2 IRFZ44N ! N-CHANNEL Power MOSFET Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case Duty Cycle ZTJC, Thermal Impedance 1.000 50% 20% 10% 5% 0.100 2% PDM t1 1% 0.010 t2 single pulse NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x ZTJC x RTJC+TC 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 tp, Rectangular Pulse Duration (s) Figure 3. Maximum Continuous Drain Current vs Case Temperature 70 140 120 60 ID, Drain Current (A) PD, Power Dissipation (W) Figure 2. Maximum Power Dissipation vs Case Temperature 100 80 60 40 20 50 40 30 20 10 0 0 25 50 75 100 125 150 175 25 50 TC, Case Temperature (oC) 100 125 150 175 TC, Case Temperature (oC) Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current Figure 4. Typical Output Characteristics 50 PULSE DURATION = 250 µS DUTY CYCLE = 0.5% MAX TC = 25 oC 180 45 VGS = 15V VGS = 10V 160 VGS = 8V 140 120 VGS = 6V 100 VGS = 5V 80 VGS = 4.5V 60 VGS = 4V 40 20 VGS = 3.5V ON Resistance (m: 200 RDS(ON), Drain-to-Source 220 ID, Drain Current (A) 75 40 ID = 14A ID = 28A ID = 55 A 35 30 PULSE DURATION = 250 µS DUTY CYCLE = 0.5% MAX o TC = 25 C 25 20 VGS = 3V 15 0 0 5 VDS, Drain-to-Source Voltage (V) 10 3 4 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) Page 3 IRFZ44N ! N-CHANNEL Power MOSFET Figure 6. Maximum Peak Current Capability IDM, Peak Current (A) 10000 FOR TEMPERATURES ABOVE 25 oC DERATE PEAK CURRENT AS FOLLOWS: TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 1000 I = I 25 150 – T C ---------------------125 100 10 VGS = 10V 1 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0 tp, Pulse Width (s) Figure 8. Unclamped Inductive Switching Capability 40 1000 PULSE DURATION = 250 µs DUTY CYCLE = 0.5% MAX VDS = 10 V 35 IAS, Avalanche Current (A) ID, Drain-to-Source Current (A) Figure 7. Typical Transfer Characteristics 30 25 20 15 +175 oC +25oC -55oC 10 5 0 1.5 2.0 2.5 3.0 100 STARTING TJ = 25 oC STARTING TJ = 150 oC 10 1 4.0 3.5 If Rz 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1] If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD) R equals total Series resistance of Drain circuit 1E-6 VGS, Gate-to-Source Voltage (V) 100E-6 1E-3 10E-3 100E-3 tAV, Time in Avalanche (s) Figure 10. Typical Drain-to-Source ON Resistance vs Junction Temperature Figure 9. Typical Drain-to-Source ON Resistance vs Drain Current 2.5 50 PULSE DURATION = 10 µs DUTY CYCLE = 0.5% MAX TC=25°C 40 30 20 VGS=10V 10 RDS(ON), Drain-to-Source Resistance (Normalized) RDS(ON), Drain-to-Source ON Resistance (m:) 10E-6 2.0 1.5 1.0. PULSE DURATION = 250 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 15A 0.5 0 50 100 150 ID, Drain Current (A) 200 250 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, Junction Temperature (oC) Page 4 IRFZ44N ! N-CHANNEL Power MOSFET Figure 12. Typical Threshold Voltage vs Junction Temperature 1.20 1.2 VGS(TH), Threshold Voltage (Normalized) BVDSS, Drain-to-Source Breakdown Voltage (Normalized) Figure 11. Typical Breakdown Voltage vs Junction Temperature 1.15 1.10 1.05 1.00 0.95 VGS = 0V ID = 250 µA 0.90 -75 -50 -25 0.0 25 50 75 1.1 1.0 0.9 0.8 0.7 0.6 0.5 100 125 150 175 VGS = VDS ID = 250 µA -75 -50 -25 0.0 25 50 Figure 13. Maximum Forward Bias Safe Operating Area Figure 14. Typical Capacitance vs Drain-to-Source Voltage 3000 1000 100 100µ 1.0m 10 10ms TJ = MAX RATED, TC = 25 oC Single Pulse VGS, Gate-to-Source Voltage (V) Ciss 2000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd Coss # Cds + Cgd Crss = Cgd 1500 Coss 1000 500 Crss 0 100 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain Voltage (V) Figure 15. Typical Gate Charge vs Gate-to-Source Voltage Figure 16. Typical Body Diode Transfer Characteristics 12 10 VDS=45V 8 VDS=30V VDS=15V 6 4 2 ID = 59A 0 0 2500 DC 10 1 C, Capacitance (pF) 10µs ISD, Reverse Drain Current (A) ID, Drain Current (A) OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 1 75 100 125 150 175 TJ, Junction Temperature (oC) TJ, Junction Temperature (oC) 5 10 15 20 25 30 QG , Total Gate Charge (nC) 35 40 180 160 140 120 150 oC 100 25 oC 80 -55 oC 60 40 20 VGS = 0V 0 0.3 0.5 0.7 0.9 1.1 1.3 VSD, Source-to-Drain Voltage (V) Page 5