SUNTAC IRFZ44V

IRFZ44V
!
N-CHANNEL Power MOSFET
APPLICATION
FEATURES
‹ DC motor control
‹ Low ON Resistance
‹ UPS
‹ Low Gate Charge
‹ Class D Amplifier
‹ Peak Current vs Pulse Width Curve
‹ Inductive Switching Curves
VDSS
RDS(ON)
ID
60V
16.5mȍ
60A
PIN CONFIGURATION
SYMBOL
TO-220
D
SOURCE
DRAIN
GATE
Front View
G
S
1
2
N-Channel MOSFET
3
ʳ
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Drain to Source Voltage (Note 1)
Drain to Current Ё Continuous Tc = 25к, VGS@10V
Ё Continuous Tc = 100к, VGS@10V
Ё Pulsed Tc = 25к, VGS@10V (Note 2)
Value
Unit
VDSS
60
V
ID
60
A
ID
43
IDM
241
Gate-to-Source Voltage Ё Continue
VGS
±20
Total Power Dissipation
PD
150
W
1.0
W/к
Derating Factor above 25к
Peak Diode Recovery dv/dt (Note 3)
V
dv/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
к
Single Pulse Avalanche Energy L=144µH,ID=40 Amps
EAS
500
mJ
Maximum Lead Temperature for Soldering Purposes
TL
300
к
TPKG
260
к
IAS
60
A
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
THERMAL RESISTANCE
Symbol
RșJC
Parameter
Junction-to-case
RșJA
Junction-to-ambient
Min
Typ
Max
1.0
Units
к/W
62
к/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +175к
1 cubic foot chamber, free air
Page 1
IRFZ44V
!
N-CHANNEL Power MOSFET
ORDERING INFORMATION
Part Number
Package
....................IRFZ44V................................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
cIRFZ44V
Characteristic
Symbol
Min
VDSS
60
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
V
(VGS = 0 V, ID = 250 µA)
ӔVDSS/ǻTJ
Breakdown Voltage Temperature Coefficient
mV/к
0.069
(Reference to 25к, ID = 250 µA)
Drain-to-Source Leakage Current
IDSS
µA
(VDS = 60 V, VGS = 0 V, TJ = 25к)
25
(VDS = 48 V, VGS = 0 V, TJ = 150к)
250
Gate-to-Source Forward Leakage
IGSS
100
nA
IGSS
-100
nA
3.0
V
(VGS = 20 V)
Gate-to-Source Reverse Leakage
(VGS = -20 V)
ON Characteristics
VGS(th)
Gate Threshold Voltage
1.0
2.0
(VDS = VGS, ID = 250 µA)
Static Drain-to-Source On-Resistance
RDS(on)
(Note 4)
mȍ
(VGS = 10 V, ID = 60A)
16.5
Forward Transconductance (VDS = 15 V, ID = 60A)
(Note 4)
gFS
36
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Gate-to-Source Charge
Ciss
1430
Coss
420
pF
pF
Crss
88
pF
(VDS = 30 V, ID = 60 A,
Qg
37.7
VGS = 10 V) (Note 5)
Qgs
8.4
nC
nC
Qgd
9.8
nC
td(on)
12.1
trise
64
ns
ns
td(off)
69
ns
tfall
39
ns
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Gate-to-Drain (“Miller”) Charge
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 30 V, ID = 60 A,
VGS = 10 V,
RG = 9.1ȍ) (Note 5)
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
IS
60
A
A
Integral pn-diode in MOSFET
Pulse Source Current (Body Diode)
ISM
241
Diode Forward On-Voltage
(IS = 60 A, VGS = 0 V)
VSD
1.5
Reverse Recovery Time
(IF = 60A, VGS = 0 V,
trr
55
ns
di/dt = 100A/µs)
Qrr
110
nC
Reverse Recovery Charge
V
Page 2
IRFZ44V
!
N-CHANNEL Power MOSFET
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
Duty Cycle
ZTJC,
Thermal Impedance
1.000
50%
20%
10%
5%
0.100
2%
PDM
t1
1%
0.010
t2
single pulse
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZTJC x RTJC+TC
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
tp, Rectangular Pulse Duration (s)
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
70
140
120
60
ID, Drain Current (A)
PD, Power Dissipation (W)
Figure 2. Maximum Power Dissipation
vs Case Temperature
100
80
60
40
20
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
TC, Case Temperature (oC)
100
125
150
175
TC, Case Temperature (oC)
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
Figure 4. Typical Output Characteristics
50
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
TC = 25 oC
180
45
VGS = 15V
VGS = 10V
160
VGS = 8V
140
120
VGS = 6V
100
VGS = 5V
80
VGS = 4.5V
60
VGS = 4V
40
20
VGS = 3.5V
ON Resistance (m:
200
RDS(ON), Drain-to-Source
220
ID, Drain Current (A)
75
40
ID = 14A
ID = 28A
ID = 55 A
35
30
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
o
TC = 25 C
25
20
VGS = 3V
15
0
0
5
VDS, Drain-to-Source Voltage (V)
10
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Page 3
IRFZ44V
!
N-CHANNEL Power MOSFET
Figure 6. Maximum Peak Current Capability
IDM, Peak Current (A)
10000
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
1000
I = I 25
150 – T C
---------------------125
100
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
tp, Pulse Width (s)
Figure 8. Unclamped Inductive Switching Capability
40
1000
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VDS = 10 V
35
IAS, Avalanche Current (A)
ID, Drain-to-Source Current (A)
Figure 7. Typical Transfer Characteristics
30
25
20
15
+175 oC
+25oC
-55oC
10
5
0
1.5
2.0
2.5
3.0
100
STARTING TJ = 25 oC
STARTING TJ = 150 oC
10
1
4.0
3.5
If Rz 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1]
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
R equals total Series resistance of Drain circuit
1E-6
VGS, Gate-to-Source Voltage (V)
100E-6
1E-3
10E-3
100E-3
tAV, Time in Avalanche (s)
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
2.5
50
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
40
30
20
VGS=10V
10
RDS(ON), Drain-to-Source
Resistance (Normalized)
RDS(ON),
Drain-to-Source ON Resistance (m:)
10E-6
2.0
1.5
1.0.
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 15A
0.5
0
50
100
150
ID, Drain Current (A)
200
250
-75 -50 -25
0
25
50
75 100 125 150 175
TJ, Junction Temperature (oC)
Page 4
IRFZ44V
!
N-CHANNEL Power MOSFET
Figure 12. Typical Threshold Voltage vs
Junction Temperature
1.20
1.2
VGS(TH), Threshold Voltage
(Normalized)
BVDSS, Drain-to-Source
Breakdown Voltage (Normalized)
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.15
1.10
1.05
1.00
0.95
VGS = 0V
ID = 250 µA
0.90
-75 -50 -25
0.0
25
50
75
1.1
1.0
0.9
0.8
0.7
0.6
0.5
100 125 150 175
VGS = VDS
ID = 250 µA
-75 -50
-25
0.0
25
50
Figure 13. Maximum Forward Bias Safe
Operating Area
Figure 14. Typical Capacitance
vs Drain-to-Source Voltage
3000
1000
100
100µ
1.0m
10
10ms
TJ = MAX RATED, TC = 25 oC
Single Pulse
VGS, Gate-to-Source Voltage (V)
Ciss
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
Coss # Cds + Cgd
Crss = Cgd
1500
Coss
1000
500
Crss
0
100
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain Voltage (V)
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
Figure 16. Typical Body Diode Transfer
Characteristics
12
10
VDS=45V
8
VDS=30V
VDS=15V
6
4
2
ID = 59A
0
0
2500
DC
10
1
C, Capacitance (pF)
10µs
ISD, Reverse Drain Current (A)
ID, Drain Current (A)
OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)
1
75 100 125 150 175
TJ, Junction Temperature (oC)
TJ, Junction Temperature (oC)
5
10
15
20
25
30
QG , Total Gate Charge (nC)
35
40
180
160
140
120
150 oC
100
25 oC
80
-55 oC
60
40
20
VGS = 0V
0
0.3
0.5
0.7
0.9
1.1
1.3
VSD, Source-to-Drain Voltage (V)
Page 5