STC1815 NPN Silicon Transistor STC1815 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 50 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 5 - - V Collector cut-off current ICBO VCB=50V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA DC current gain hFE* VCE=6V, IC=2mA 70 - 700 - - - 0.25 V 80 - - MHz Collector-Emitter saturation voltage Transistion frequency VCE(sat) fT IC=100mA, IB=10mA VCE=10V, IC=1mA Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 2 3.5 pF Noise figure NF VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ - - 10 dB * : hFE rank / A : 70 ~ 140, B : 120 ~ 240, C : 200 ~ 400, D : 300 ~ 700 2 STC1815 Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 3 IC -VCE Fig. 2 IC -VBE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC 3