STC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The STC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES 1 *High current output up to 3A *Low saturation voltage *Complement to 2SD882 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG -40 -30 -5 10 1 -3 -7 -0.6 150 -55 ~ +150 V V V W W A A A °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation( Tc=25°C) Collector Dissipation( Ta=25°C) Collector Current(DC) Collector Current(PULSE) Base Current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note 1) SYMBOL ICBO IEBO hFE1 hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN 30 100 TYP 200 150 -0.3 -1.0 80 45 MAX UNIT -1000 -1000 nA nA 400 -0.5 -2.0 U V V MHz pF 1 ,A STC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 A 100-200 RANK RANGE B 200-300 TYPICAL PERFORMANCE CHARACTERISTICS Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA -IB=4mA 100 S/ b pa si is 0.8 12 lim -IB=1mA 0 0 4 8 12 16 20 0 50 100 150 200 -50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 10 0 -1 10 VCE=5V 2 10 IB=8mA 1 10 0 10 -3 10 1 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product -2 10 -2 10 -1 10 10 0 1 10 Fig.7 DC current gain 150 200 Ic(max),Pulse Ic(max),DC 10 10 mS 1m S 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage Ic,Collector current(A) -Collector-Base Voltage(v) 100 S 1m 0. 1 10 50 Fig.6 Safe operating area 3 10 IE=0 f=1MHz 0 Tc,Case Temperature(°C) Fig.5 Current gainbandwidth product 3 10 0 10 4 0 -50 -Collector-Emitter voltage(V) 2 10 8 d ite -IB=2mA 0 Output Capacitance(pF) lim ite d n tio 50 -IB=3mA 0.4 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA D -Ic,Collector current(A) 150 1.6 Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) U 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) 2