STC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-252 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG 40 30 5 10 1 3 7 0.6 150 -55 ~ +150 V V V W W A A A °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Tc=25°C) Collector dissipation( Ta=25°C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector cut-off current Emitter cut-off current DC current gain(note 1) ICBO IEBO hFE1 hFE2 VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Output capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN 30 100 TYP MAX UNIT 1000 1000 nA nA 0.5 2.0 V V MHz pF 200 150 0.3 1.0 80 45 1 STC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 A 100-200 RANK RANGE B 200-300 TYPICAL PARAMETERS PERFORMANCE Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA -IB=4mA S/ b 50 lim -IB=1mA 0 0 4 8 12 16 20 0 50 100 150 200 -50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 10 0 -1 10 -2 10 VCE=5V 2 10 IB=8mA 1 10 0 10 -3 10 1 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product 1 10 -2 10 -1 10 10 0 1 10 Fig.7 DC current gain 100 150 200 Ic(max),Pulse Ic(max),DC 10 10 mS 1m S 0. 1m S 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage Ic,Collector current(A) -Collector-Base Voltage(v) 50 Fig.6 Safe operating area 3 10 IE=0 f=1MHz 0 Tc,Case Temperature(°C) Fig.5 Current gainbandwidth product 3 10 0 10 4 0 -50 -Collector-Emitter voltage(V) 2 10 8 d ite -IB=2mA 0 Output Capacitance(pF) lim ite d n tio -IB=3mA 0.4 100 pa si is 0.8 12 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA D -Ic,Collector current(A) 150 1.6 Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) 2