STC8550S PNP Silicon Transistor Low Voltage High Current Radios in Class B Push-pull Operation. • Complimentary to STC8050S • Collector Current: IC=0.8A • Collector Power Dissipation: PC=0.7W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 Units V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current PC Collector Power Dissipation TJ TSTG -0.8 A 0.7 W Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -40 BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -40 BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -6 ICBO Collector Cut-off Current VCB= -15V, IE=0 Typ. Max. Units V V V -50 nA -50 nA IEBO Emitter Cut-off Current VEB= -6V, IC=0 hFE1 hFE2 hFE3 DC Current Gain VCE= -1V, IC= -5mA VCE= -1V, IC= -50mA VCE= -1V, IC= -500mA VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.28 -0.5 VBE (sat) Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.98 -1.2 V VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 V Cob Output Capacitance VCB= -10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 45 85 40 100 170 400 100 V 15 pF 200 MHz hFEClassification Classification A B C hFE2 85 ~ 160 120 ~ 200 200 ~ 400 Typical Characteristics STC8550S 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 -100 VCE = -1V IC[mA], COLLECTOR CURRENT IC=10IB -1000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 -10 -1 -0.1 -0.0 -1000 -0.4 -0.6 -0.8 -1.0 -1.2 100 f=1MHz IE=0 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -1000 Figure 2. DC current Gain -10000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Cob[pF], CAPACITANCE -1 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product