KSC2682 KSC2682 Audio Frequency Power Amplifier • Complement to KSA1142 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Value 180 Units V 180 V 5 V Collector Current 100 mA PC Collector Dissipation (Ta=25°C) 1.2 W PC Collector Dissipation (TC=25°C) 8 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 180V, IE = 0 Min. Typ. Max. 1.0 Units µA 90 100 190 200 1.0 µA 320 IEBO Emitter Cut-off Current VEB = 3V, IC= 0 hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA VCE(sat) * Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA 0.12 0.5 VBE(sat) * Base-Emitter Saturation Voltage IC = 50mA, IB = 5mA 0.8 1.5 fT Current Gain Bandwidth Product VCE = 10V, IC = 20mA 200 Cob Output Capacitance VCB = 10V, IE = 0 f = 1MHz 3.2 NF Noise Figure VCE = 10V, IC = 1mA RS = 10KΩ, f = 1kHz 4 V V MHz 5.0 pF dB * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classificntion Classification O Y hFE2 100 ~ 200 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2682 Typical Characteristics 1000 160 VCE= 5V 120 IB=500uA IB =450uA IB=400uA 100 hFE, DC CURRENT GAIN Ic[mA], COLLECTOR CURRENT Pulse Test 140 IB =350uA IB=300uA 80 IB =250uA 60 IB =200uA 40 IB=150uA 100 10 IB=100uA IB =50uA IB =0 20 0 20 40 60 80 100 120 140 1 0.1 160 Figure 1. Static Characteristic 100 Figure 2. DC current Gain 100 10 IE=0 f=1.0MHz IC= 10 IB 1 Cob[pF], CAPACITANCE VCE(sat), VBE(sat)[V], SATURATION VOLTAGE 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) 0.1 VCE(sat) 10 1 0.01 0.1 1 10 1 100 10 IC[mA], COLLECTOR CURRENT 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 1000 1000 s C (5 0m s) 10 VCEOMAX 100 10ms IcMAX(DC) 100 1m IC[A], COLLECTOR CURRENT VCE = 10V D fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1 1 10 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSC2682 160 16 140 14 pD[W], POWER DISSIPATION dT[%], IC DISSIPATION Typical Characteristics (Continued) 120 100 S/B 80 Di 60 40 ss ip at io Lim n Li ited m ite d 20 12 10 8 6 4 2 0 0 0 50 100 150 200 O TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area ©2000 Fairchild Semiconductor International 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC2682 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E