1N4148 SMALL SIGNAL SWITCHING DIODE DO-34(GLASS) DO-35(GLASS) 1.0 2(26.0) MIN. 0.079(2.0) MAX 1.0 2(26.0) MIN. 0.079(2.0) MAX 0.106 (2.9) MAX FEATURES Silicon epitaxial planar diode Switching diodes 500mw power dissipation High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 0.165 (4.2) MAX MECHANICAL DATA 1.0 2(26.0) MIN. 0.017(0.42) TYP 1.0 2(26.0) MIN. 0.020(0.52) TYP Case: DO-34\DO-35 glass sealed envelope. Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.09 grams(DO-34) 0.005 ounce, 0.14 grams(DO-35) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=25 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 10mA Maximum DC reverse current TA=25 C VR=75V at rated DC blocking voltage TA=100 C VR=20V Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) SYMBOLS VRRM VRMS 1N4148 UNITS 100 75 VOLTS VOLTS I(AV) 150 mAmps IFSM 500 mAmps VF 1.0 Volts IR 5.0 50 uA trr 4.0 ns 4.0 -65 to +200 pF C CJ Operating junction and storage temperature range TJ,TSTG NOTES: 1.Test condition:IF=10mA,IR=10mA,Irr=1mA,VR=6V,RL=100W. 2.Measured at 1.0 MHz and applied reverse voltage of 4.0 volts www.shunyegroup.com FIG. 2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE (TYPICAL VALUES) FIG. 1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 800 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES P,POWER DISSIPATION,MILLIWATTS RATINGS AND CHARACTERISTIC CURVES 1N4148 700 600 500 400 300 200 100 0 0 100 200 C AMBIENT TEMPERATURE, C 1 0.1 0.01 TJ=25 C 0.001 0.0001 40 60 80 100 120 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 3-FORWARD CHARACTERISTICS FIG. 4-RELATIVE CAPACTANCE VERSUS REVERSE VOLTAGE Ctot(vR) RELATIVE CAPACTANCE Ctot(0v) 14 12 10 8 6 4 2 0 0 1 2V INSTANTANEOUS FORWARD VOLEAGE, VOLTS 1.2 1.0 0.8 0.6 0.4 0 5 10V REVERSE VOLTAGE,VOLTS. FIG. 5-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION IFRM,PEAK FORWARD CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,MILLIAMPERES 16 100 n=tp/T V=tp/T T=1/fp tp 10 IFRM n=0 0.1 T 0.2 1 0.5 0.1 0.01 0.1 1 10 tp,PULSE DURATION,ms www.shunyegroup.com 100 1000ms