SYNC-POWER SPN2318

SPN2318
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2318 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
40V/3.9A,RDS(ON)= 56mΩ@VGS=10V
‹
40V/3.5A,RDS(ON)= 62mΩ@VGS=4.5V
‹
40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOT-23-3L package design
PIN CONFIGURATION ( SOT-23-3L )
PART MARKING
2009/07/15 Ver.1
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SPN2318
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
ORDERING INFORMATION
Part Number
Package
SPN2318S23RGB
SOT-23-3L
Part
Marking
18YW
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN2318S23RGB : Tape Reel ; Pb – Free ; Halogen -Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
40
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
4.0
3.0
A
IDM
10
A
IS
1.25
A
PD
1.25
0.8
W
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
100
℃/W
2009/07/15 Ver.1
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SPN2318
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS= 5V,VGS =4.5V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=2.3A,VGS =0V
RDS(on)
0.5
1.2
VDS=0V,VGS=±12V
VDS=40V,VGS=0V
VDS=40V,VGS=0V
TJ=85℃
VGS= 10V,ID=3.9A
VGS=4.5V,ID=3.5A
VGS=2.5V,ID=2.0A
VDS=15V,ID=6.2A
Drain-Source On-Resistance
40
±100
1
5
10
V
nA
uA
A
0.050
0.056
0.088
13
0.056
0.062
0.095
0.8
1.2
16
24
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.5
td(on)
15
20
6
12
10
20
40
80
Turn-On Time
Turn-Off Time
2009/07/15 Ver.1
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 2A
VDD=15V,RL=15Ω
ID≡1.0A,VGEN=10V
RG=6Ω
nC
3
Page 3
nS
SPN2318
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/07/15 Ver.1
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SPN2318
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/07/15 Ver.1
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SPN2318
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/07/15 Ver.1
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SPN2318
N-Channel Enhancement Mode MOSFET
SOT-23-3L PACKAGE OUTLINE
2009/07/15 Ver.1
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SPN2318
N-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
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SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2009/07/15 Ver.1
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