SYNC-POWER SPN4506

SPN4506
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4506 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
40V/10A,RDS(ON)= 10mΩ@VGS= 10V
‹
40V/ 8A,RDS(ON)= 12mΩ@VGS= 4.5V
‹
40V/ 6A,RDS(ON)= 16mΩ@VGS= 2.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/ 08/ 20
Ver.1
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SPN4506
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S
Source
2
S
Source
3
S
Source
4
G
5
D
Gate
Drain
6
D
Drain
7
D
Drain
8
D
Drain
ORDERING INFORMATION
Part Number
Package
SPN4506S8RGB
SOP- 8P
Part
Marking
SPN4506
※ SPN4506S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
40
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
10
8
A
IDM
30
A
IS
2.3
A
PD
2.5
1.6
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
80
℃/W
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SPN4506
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS= 5V,VGS =4.5V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=2.3A,VGS =0V
RDS(on)
0.5
1.0
VDS=0V,VGS=±20V
VDS=40V,VGS=0V
VDS=40V,VGS=0V
TJ=85℃
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
VDS=15V,ID=6.2A
Drain-Source On-Resistance
40
±100
1
10
10
V
nA
uA
A
0.007
0.008
0.013
13
0.010
0.012
0.016
0.8
1.2
18
25
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
tr
Turn-Off Time
Ver.1
td(off)
tf
nC
6.5
5.8
VDS=20V,VGS=0V
f=1MHz
td(on)
Turn-On Time
2009/ 08/ 20
VDS=20V,VGS=4.5V
ID= 5A
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
1850
pF
250
155
10
15
15
25
30
45
12
16
nS
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SPN4506
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4506
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4506
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/ 08/ 20
Ver.1
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SPN4506
N-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
2009/ 08/ 20
Ver.1
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SPN4506
N-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2009/ 08/ 20
Ver.1
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