SYNC-POWER SPN4910

SPN4910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4910 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
N-Channel
40V/10A,RDS(ON)= 20mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 24mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 30mΩ@VGS= 2.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/07/28
Ver.1
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SPN4910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S1
Source 1
2
G1
Gate 1
3
S2
Source 2
4
G2
5
D2
Gate 2
Drain 2
6
D2
Drain 2
7
D1
Drain 1
8
D1
Drain 1
ORDERING INFORMATION
Part Number
Package
SPN4910S8RGB
SOP- 8P
Part
Marking
SPN4910
※ SPN4910S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
e
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
40
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
IDM
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
2009/07/28
Ver.1
ID
IS
PD
TJ
TSTG
T ≤ 10sec
Steady State
RθJA
10.0
8.0
25
2.3
2.5
1.6
-55/150
-55/150
50
80
A
A
A
W
℃
℃
℃/W
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SPN4910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS= 5V,VGS =4.5V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=2.3A,VGS =0V
RDS(on)
0.5
1.0
VDS=0V,VGS=±20V
VDS=40V,VGS=0V
VDS=40V,VGS=0V
TJ=85℃
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
VDS=15V,ID=6.2A
Drain-Source On-Resistance
40
±100
1
10
10
V
nA
uA
A
0.014
0.017
0.024
13
0.020
0.024
0.030
0.8
1.2
10
14
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
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Ver.1
VDS=20V,VGS=4.5V
ID= 5A
3.2
VDS=20V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
nC
2.8
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
850
pF
110
75
6
12
10
20
20
36
6
12
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nS
SPN4910
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4910
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4910
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4910
N-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
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Ver.1
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SPN4910
N-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2009/07/28
Ver.1
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