LL4150 HIGH SPEED SWITCHING DIODE MiniMELF (SOD-80C) Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 600 mA • Pb / RoHS Free 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.079 (2.00)Min. 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 75 V Maximum Reverse Voltage VR 50 V IF 200 mA Maximum Average Forward Current IF(AV) 150 mA Maximum Surge Forward Current at t < 1s and Tj = 25°C IFSM 0.5 A Maximum Power Dissipation PD 500 mW Maximum Repetitive Peak Forward Current IFRM 600 mA RθJA 350 °C/W Maximum Continuous Current Thermal Resistance Junction to Ambient Air (1) Maximum Junction Temperature TJ 175 °C Storage Temperature Range TS -65 to + 175 °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Symbol IR Forward Voltage VF Diode Capacitance Cd Reverse Recovery Time Trr Page 1 of 2 Test Condition VR = 50 V VR = 50 V , Tj = 150 °C IF = 100 mA IF = 200 mA f = 1MHz ; VR = 0 IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 Ω ; measured at IR = 0.1x IF Min. Typ. Max. Unit - - 0.1 100 0.92 1.0 2.5 µA µA - - 4 ns V pF Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( LL4150 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 1000 Forward Current , IF (mA) AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (mA) 200 150 100 50 100 10 1 TJ = 25°C 0.1 0 0.01 0 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 103 Reverse Current , IR (µA) Diode Capacitance , Cd (pF) 1.0 0.9 0.8 0.7 f = 1MHz; TJ = 25°C 0.6 102 VR = 75V 10 1 10-1 0.5 0.4 0 10 Reverse Voltage , VR (V) Page 2 of 2 20 10-2 0 100 200 Junction Temperature, Tj (°C) Rev. 02 : March 25, 2005