UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no degradation in gamma sensitivity resulting from a total dose of 1014 neutrons/cm2 of 1 MeV equivalent. Package The UM9441 is an axially leaded device constructed by metallurgically bonding the PIN chip in between two molybdenum refractory pins that are typically 0.125 inches in diameter and 0.050 inches long. Hyper-pure glass is then fused over this bond to form a void less seal. Leads are then brazed to ends of molybdenum pins. This results in a high-reliability package using materials so well thermally matched that the UM9441 can withstand temperature shock or cycling from -196 oC to +300 oC. WWW . Microsemi .C OM Description Silicon PIN devices are effective detectors of nuclear and electromagnetic radiation. This includes gamma radiation, electrons, and X-rays. The detectors can be used across the temperature range of -55 oC to +175 oC instead of being restricted to use at low temperatures. The absorbed radiation produces electron-hole pairs in the space charge region. These charges are swept out by the applied field and result in a current flow proportional to the rate of absorbed radiation. The Microsemi UM9441 series utilizes high resistivity material and is designed to have a uniform area mesa structure to define the active volume. The current sensitivity of this device is proportional only to the I-region volume and is independent of High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low operating Voltage APPLICATIONS/BENEFITS Surface Mount package available RoHS compliant devices available IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Reverse Voltage VR Photocurrent Value Unit 100 V 3Adc 3A s pulsed 2 Storage Temperature T stg -55 to +200 ºC Operating Temperature T op -55 to +175 ºC UM9441 Copyright 2006 Rev. 0, 2006-03-14 Microsemi Page 1 UM9441 PIN RADIATION DETECTORS Conditions VR = 50 V 6 10 rads(Si)/sec 2.5 MeV Flash X-Ray Ion Physics Corporation FX-25 F = 1 MHz, V = 50 V VR = 50 V IF = 10 mA Photocurrent Capacitance Reverse Current Minority Carrier Lifetime Min Typ. 4.0 6.0 Max Units mA 10 1.0 2.0 PHOTOCURRENT SENSITIVITY TYPICAL WWW . Microsemi .C OM Parameter pF µA µs VOLTAGE SENSITIVITY TYPICAL 103 10 RADIATION SOURCE - AS NOTED 7 PHOTOCURRENT (mA) PHOTOCURRENT (mA) 8 FLASH X-RAY PIN REVERSE VOLTAGE 50 V 102 LINAC 101 FX-25 6 5 4 LINAC 3 2 ABSORBED DOSE RATE - 1E6 [rads(Si)/sec] RADIATION SOURCE - AS NOTED 100 105 1 106 107 108 0 25 50 75 100 PIN REVERSE VOLTAGE (V) ABSORBED DOSE RATE [rads(Si)/sec] ELECTRICAL Copyright 2006 Rev. 0, 2006-03-14 Microsemi Page 2 UM9441 PIN RADIATION DETECTORS APOLLO DRAGON HAWK MARINER WWW . Microsemi .C OM Reliability The UM9441 is consistent with Microsemi’s reputation as a manufacturer of high reliability semiconductors. Microsemi is equipped to perform JAN type testing, base-lining and documental conformance to a wide range of reliability testing. This commitment to reliability has enabled Microsemi to be a qualified supplier of semiconductor devices to many high-reliability programs such as: MINUTEMAN SPRINT TRIDENT VIKING ELECTRICALS Copyright 2006 Rev. 0, 2006-03-14 Microsemi Page 3 UM9441 PIN RADIATION DETECTORS WWW . Microsemi .C OM NOTES: NOTES Copyright 2006 Rev. 0, 2006-03-14 Microsemi Page 4