SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 FEATURES 1.35(0.053) 1.26(.050) 1.15(0.045) 1.24(.048) 2.70(0.106) 2.70(0.106) 1.80(0.071) 2.30(0.091) 2.30(0.091) 1.60(0.063) Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time 1.80(0.071) 1.60(0.063) MECHANICAL DATA 0.4(0.016) .305(0.012) .25(0.010) .295(0.010) .177(.007) .089(.003) 1.00(.040) 0.1(0.004) 0.80(.031) MIN .72(0.028) .69(0.027) .08(.003) MIN Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: SD101AWS:S1, SD101BWS:S2, SD101CWS:S3 Dimensions in millimeters and (inches) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum ratings and electrical characteristics, Single diode @TA=25 C PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Forward continuous current Repetitive peak forward current @t<1.0s @t=10us Power dissipation Thermal resistance junction to ambient Storage temperature SYMBOLS SD101AWS SD101BWS SD101CWS UNITS VRRM VRMS VDC 60 50 40 VOLTS VR(RMS) 42 35 15 50 2.0 200 300 -65 to +125 28 IFM IFRM Pd RΘJA TSTG V mA mA A mW C/W C Electrical ratings @TA=25 PARAMETER Reverse breakdown voltage Fowrard voltage Reverse current Capacitance between terminals Reverse recovery time SYMBOLS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS V(BR)R Min. 60 50 40 Typ. VF IRM CT trr www.shunyegroup.com Max. Unit V 0.41 0.40 0.39 1.00 0.95 0.90 V 0.2 uA 2.0 2.1 2.2 1.0 pF ns Conditions IR=10uA IR=10uA IR=10uA IF=1.0mA IF=1.0mA IF=1.0mA IF=15mA IF=15mA IF=15mA VR=50V VR=40V VR=30V VR=0V,f=1.0MHz IF=IR=5mA Irr=0.1XIR,RL=100 RATINGS AND CHARACTERISTIC CURVES SD101AWS-SD101CWS FIG. 1- POWER DERATING CURVE FIG. 2-TYPICAL FORWARD CHARACTERISTIC 10 See Note1 IF,FORWARD CURRENT(mA) Pd.POWER DISSIPATION (mW) 500 400 300 200 100 0 0 1.0 0.1 0.01 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 TA,AMBIENT TEMPERATURE( C) VR REVERSE VOLTAGE.(V) FIG.3- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE FIG. 4- TYPICAL REVERSE CHARACTERISTICS 1.0 10 2 TA=125 C Tj=25 C f=1MHz C IR,REVERSE CURRENT(uA) CT, TOTAL CAPACITANCE(pF) A B C B A 1 1 TA =75 C 0.1 TA=25 C 0.01 TA=0 C 0.001 TA =-65 C 0 0 10 20 30 40 50 0.0001 0 10 VR REVERSE VOLTAGE.(V) www.shunyegroup.com 20 30 40 VR REVERSE VOLTAGE.(V) 50 60