TS64M~1GRMMC4 MMCmobile Description Features TS64MRMMC4 ~ TS1GRMMC4 is a 64MB ~ 1GB • Storage Capacity: 64MB ~ 1GB MMCmobile memory card. It’s a fastest, low-power, • Support Dual Operating Voltage: 2.7~3.6V/1.65~1.95V highly integration memory card. TS64MRMMC4 ~ • Support clock frequencies: 0~52MHz TS1GRMMC4 is designed to provide an inexpensive, • Support different Bus width: x1, x4, x8 mechanically robust storage medium in card form for • Operating Temperature: -25°C ~ 85°C multimedia mobile • Data access mode: Byte mode devices (handheld PCs, digital cameras, MP3 • Fully compatible with MultiMediaCard system consumer applications and players, etc.) to store, copy, and move data at specification version 4.0 and backwards compatibility high-speed transfer rate. with previous specification • Form Factor: 18mm x 24mm x 1.4mm Placement Front Back Pin Definition MMC Mode SPI Mode Pin No. 1 2 3 4 5 6 7 Name DAT3 CMD VSS1 VDD CLK VSS2 DAT0 Type I/O/PP I/O/PP/OD S S I S I/O/PP Description Data Command/Response Ground Power supply Clock Ground Data Name CS DI VSS VDD SCLK VSS2 DO 8 9 10 11 12 13 DAT1 DAT2 DAT4 DAT5 DAT6 DAT7 I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP Data Data Data Data Data Data Not used Not used Not used Not used Not used Not used Type I I/PP S S I S O/PP Description Chip select Data in Ground Power supply Clock Ground Data out S: Power Supply; I:Input; O:Output; PP:Push-Pull; OD:Open-Drain; NC:Not Connected Transcend Information Inc. 1 TS64M~1GRMMC4 MMCmobile MultiMediaCard Architecture Transcend Information Inc. 2 TS64M~1GRMMC4 MMCmobile Temperature Characteristics Parameter Operating temperature Min. Max. Unit -25 85 ℃ Electrical Characteristics • Absolute Maximum Ratings Parameter Symbol Rating Unit Power Supply Voltage VCC -0.6~+4.6 V Input Voltage VIN -0.6~+4.6 V Input/Output Voltage VI/O -0.6~+4.6 V • Recommended Operation Conditions Parameter Symbol Min. Typ. Max. Unit Power Supply Voltage (High Voltage Range) VDDH 2.7 3.3 3.6 V Power Supply Voltage (Low Voltage Range) VDDL 1.65 1.8 1.95 V Transcend Information Inc. 3 TS64M~1GRMMC4 MMCmobile DC Characteristics • High Voltage Power Supply (Ta=-25℃ to 85℃,VDDH=2.7V to3.6V) Parameter Symbol Min. Typ. Max. Unit Condition 0.3 V IOL =2mA V IOH =-100uA 0.125* VDDH V IOL =100uA Output Low Voltage (OD) VODOL Output High Voltage (PP) VOH Output Low Voltage (PP) VOL Input High Voltage VIH 0.625* VDDH VDDH +0.3 V Input Low Voltage VIL -0.3 0.25* VDDH V Operating Current ICC 20(TBD) mA Stand-by Current ISB 400(TBD) uA Input Leakage Current ILI -10/+10 uA VIN =0 to VDDH Output Leakage Current ILO -10/+10 uA VOUT =0 to VDDH Pin Capacitance CP 7 pF Power Output Voltage VF 1.95 V 0.75* VDDH 1.50 1.8 IVCCF =0mA IF＜＝240mA • Low Voltage Power Supply (Ta=-25℃ to 85℃,VDDL=1.65V to 1.95V) Parameter Symbol Min. Output High Voltage VOH VDDL -0.2 Output Low Voltage VOL Input High Voltage VIH Input Low Voltage VIL Operating Current Typ. Unit Condition V IOH =-100uA 0.2 V IOL =100uA 0.7* VDDL VDDL +0.3 V -0.3 0.3* VDDL V ICC 20(TBD) mA Stand-by Current ISB 400(TBD) uA Input Leakage Current ILI -10/+10 uA VIN =0 to VDDL Output Leakage Current ILO -10/+10 uA VOUT =0 to VDDL Pin Capacitance CP 7 pF Transcend Information Inc. 4 Max. IVCCF =0mA TS64M~1GRMMC4 MMCmobile AC Characteristics • High Speed Card Interface Timing (Ta=-25℃ to 85℃,VDDH=2.7V to3.6V) Parameter Symbol Min. Max. Unit Clock Frequency (Data Transfer Mode) fpp 26 52 MHz Clock Frequency (Identification Mode) fOD 0 400 KHz Clock Low Time tWL 6.5 Clock Rise Time tTLH 3 ns Clock Fall Time tTHL 3 ns Input Set-up Time tISU 3 ns Input Hold Time tIH 3 ns Output Delay Time tDLY 5 Signal Rise Time Signal Fall Time Transcend Information Inc. Notes ns 14 ns CL＜＝30pF trise 3 ns CL＜＝30pF tfall 3 ns CL＜＝30pF 5 TS64M~1GRMMC4 MMCmobile • Backwards Compatible Card Interface Timing (Ta=-25℃ to 85℃,VDDH=2.7V to3.6V) Parameter Symbol Min. Max. Unit Clock Frequency (Data Transfer Mode) fpp 0 20 MHz Clock Frequency (Identification Mode) fOD 0 400 KHz Clock Low Time tWL 10 Clock Rise Time tTLH 10 ns Clock Fall Time tTHL 10 ns Input Set-up Time tISU 3 ns Input Hold Time tIH 3 ns tDLY 9.7 Output Delay Time Transcend Information Inc. 6 Notes ns 35 ns CL＜＝30pF TS64M~1GRMMC4 MMCmobile • Command Latch Cycle Parameter Symbol Min. 30 tCLS1 CLE Setup Time Unit Notes ns CL<=80pF CLE Hold Time tCLH1 15 ns CL<=80pF CE Setup Time tCS1 40 ns CL<=80pF CE Hold Time tCH1 90 ns CL<=80pF ALE Setup Time tALS1 90 ns CL<=80pF ALE Hold Time tALH1 75 ns CL<=80pF WE Pulse Width tWP1 45 ns CL<=80pF Data Setup Time tDS1 90 ns CL<=80pF Data Hold Time tDH1 30 ns CL<=80pF • Address Latch Cycle Transcend Information Inc. 7 TS64M~1GRMMC4 Parameter MMCmobile Symbol CLE Setup Time tCLS2 Min. 90 CE Setup Time tCS2 195 ns CL<=80pF ALE Setup Time tALS2 30 ns CL<=80pF ALE Hold Time tALH2 15 ns CL<=80pF Write Cycle Time tWC2 150 ns CL<=80pF WE Pulse Width tWP2 45 ns CL<=80pF WE High Hold Time tWH2 105 ns CL<=80pF Data Setup Time tDS2 90 ns CL<=80pF Data Hold Time tDH2 30 ns CL<=80pF • Input Data Latch Cycle Transcend Information Inc. 8 Unit Remark ns CL<=80pF TS64M~1GRMMC4 MMCmobile Parameter CLE Hold Time tCLH3 Min. 285 CE Hold Time tCH3 195 ns CL<=80pF ALE Setup Time tALS3 90 ns CL<=80pF Write Cycle Time tWC3 60 ns CL<=80pF WE Pulse Width tWP3 45 ns CL<=80pF WE High Hold Time tWH3 15 ns CL<=80pF Data Setup Time tDS3 30 ns CL<=80pF Data Hold Time tDH3 30 ns CL<=80pF Transcend Information Inc. Symbol 9 Unit Remark ns CL<=80pF TS64M~1GRMMC4 MMCmobile • Serial Access Cycle after Read Parameter CE Access Time tCEA4 Min. 285 Read Cycle Time tRC4 60 ns CL<=80pF RE Pulse Width tRP4 45 ns CL<=80pF RE High Hold Time tREH4 15 ns CL<=80pF Data Setup Time tDS4 5(TBD) ns CL<=80pF Data Hold Time tDH4 5(TBD) ns CL<=80pF Ready to RE Low tRR4 285 ns CL<=80pF Transcend Information Inc. Symbol 10 Unit Remark ns CL<=80pF TS64M~1GRMMC4 MMCmobile Reliability and Durability Temperature Operation: -25°C / 85°C Storage: -40°C (168h) / 85°C (500h) Junction temperature: max. 95°C Moisture and corrosion Operation: 25°C / 95% rel. humidity Stress: 40°C / 93% rel. hum./500h Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009 ESD protection Contact Pads: +/-4kV, Human body model according to ANSI EOS/ESD-S5.1-1998 Non Contact Pads area: +/-8kV(coupling plane discharge) +/-15kV(air discharge) Human body model according to IEC61000-4-2 Durability 10.000 mating cycles; test procedure: t.b.d. Bending t.b.d. Torque t.b.d. Drop test 1.5m free fall UV light exposure UV: 200nm, 15Ws/cm² according to ISO 7816-1 Visual inspection Shape and form No warp page; no mold skin; complete form; no cavities surface smoothness sigma -0.1 mm/cm² within contour; no cracks; no pollution (fat, oil dust, etc.) Above technical information is based on MMC4.0 standard specification and tested to be reliable. However, Transcend makes no warranty, either expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice. Transcend Information Inc. 11