AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Parameter Thermal Resistance, Junction to Case: AGR21125EU AGR21125EF Sym Value Unit Rı JC Rı JC 0.5 0.5 °C/W °C/W Table 2. Absolute Maximum Ratings* 7 AGR21125EU (unflanged) 48 5 AGR21125EF (flanged) Figure 1. Available Packages Features Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 – 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: — Output power: 28 W. — Power gain: 14 dB. — Efficiency: 27%. — IM3: –34.5 dBc. — ACPR: –38 dBc. — Return loss: –10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 125 W continuous wave (CW) output power. Large signal impedance parameters available. Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21125EU AGR21125EF Derate Above 25 ˇC: AGR21125EU AGR21125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, +15 Vdc PD PD 350 350 W W — — TJ 2.0 2.0 200 W/°C W/°C °C TSTG –65, +150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR21125E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T C = 30 °C. Table 4. dc Characteristics Parameter Symbol Min Typ Max Unit V(BR)DSS IGSS IDSS 65 — — — — — — 4 200 12 Vdc µAdc µAdc GFS — — — — 9 — 3.8 0.08 — 4.8 — — S Vdc Vdc Vdc Symbol Min Typ Max Unit CRSS — 3.0 — pF 12 14 — dB — –34.5 –33 dBc ACPR — –38 –37 dBc IRL — –10 –9 dB Off Characteristics 200 µA) Drain-source Breakdown Voltage (VGS = 0, ID = 400 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) VGS(TH) VGS(Q) VDS(ON) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Test Fixture) Functional Tests (in Supplied Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz and f2 + 5 MHz) Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) Output Mismatch Stress (VDD = 28 V, POUT = 125 W (CW), IDQ = 1200 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles]) GPS η IM3 P1dB ψ * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135.0 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 1200 mA, and POUT = 28 W avg. 25 115 27 125 — — % W No degradation in output power. AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR21125E FB1 VGG R1 VDD R3 + R2 C2 + + C3 C12D C9D C8D C6A C7A C8A C9A C10A C11A C12A C13A C14A C15A C4 C5 Z6 Z7 Z1 C1 Z2 + Z3 Z4 2 Z5 RF INPUT Z8 Z9 Z10 Z11 Z12 C16 Z14 C18 1 DUT 3 Z13 RF OUTPUT VDD + + C12C C9C C8C C6B C7B C8B C9B C10B C11B C12B C13B C14B C15B PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic 2 ■ ■ ■ ■ 3 1 Parts List: ■ Microstrip Line: Z1 0.785 in. x 0.065 in. Z2 0.205 in. x 0.065 in. Z3 0.070 in. x 0.255 in. Z4 0.315 in. x 0.065 in. Z5 0.240 in. x 0.860 in. Z6 0.050 in. x 0.467 in. Z7 0.050 in. x 0.367 in. Z8 0.500 in. x 1.050 in. Z9 0.248 in. x 0.185 in. Z10 0.075 in. x 0.320 in. Z11 0.465 in. x 0.115 in. Z12 0.075 in. x 0.065 in. Z13 0.252 in. x 0.065 in. Z14 0.050 in. x 0.367 in. ■ WB1, WB2; 10 mil thick, 0.6 in. x 0.18 in. ® ■ Fair-Rite ferrite bead: FB1 2743019447. ® ■ Vitramon 1206 size chip capacitor: C3, C9A, C9B, C9C, C9D 22000 pF. ■ 1206 size chip capacitor: 22000 pF C12A, C12B, C12C, C12D, C13A, C13B. ■ 1206 size chip resistor: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω. ® ■ Taconic ORCER RF-35 board material, 2 oz. copper, 30 mil thickness, εr = 3.5. ATC® chip capacitor: C1 10 pF 100B100JW500X; C5, C14A, C14B, C15A, C15B 5.6 pF100B5R6BW500X; C6A, C6B 6.8 pF 100B6R8JW500X; C7A, C7B 1.2 pF 100B1R2BW500X; C16 15 pF 100B150JW500X. Murata® 0805 size chip capacitor: C8A, C8B, C8C, C8D 0.01 µF GRM40X7R103K100AL. Sprague® tantalum surface-mount chip capacitor: C2, C4, C10A, C10B, C11A, C11B 22 µF, T491, 35 V. Johanson Giga-Trim® variable capacitor: C18 0.6 pF to 4.5 pF 27271SL. B. Component Layout Figure 2. AGR21125E Test Circuit AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET U CT 8 0.6 20 f1 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.2 0.1 0.2 0.3 0.1 0.2 20 0.4 0.1 ) / Yo (-jB CE 1. 0 R 0 5 0.14 -80 0.36 0.11 -100 -90 0.13 0.1 9 0.0 -70 40 -1 0. 5 0. 07 30 -1 43 0. 8 0.0 2 0.4 .41 0 0.4 0.39 0.38 F 0.37 0.12 0. 2. 1.8 1.6 1.4 1.0 0.9 1.2 0.15 0.35 -110 0 -12 (-j 06 Z X/ 0.7 0 -4 -4 4 -70 0 6 -5 5 -3 0.1 0.3 0.8 3 -60 5 0.3 7 -5 0.1 VE -60 32 CA P AC I TI T 5 ,O o) 0.2 -30 CE CO M 0.6 18 0. RE AC TA N EN -65 0. PO N 4 0 -5 -25 31 0. 19 0. 4 0. 0.4 0.0 0.6 0 3. -20 -75 IN DU IV CT 0.8 5 0.4 4.0 -85 AN PT CE US ES 0 1. -15 0.3 0 ZS 0.2 8 0.2 f1 f3 -4 4 0. 0.2 2 0.3 0.2 9 0.2 1 -30 6 0.4 4 0.0 0 -15 -80 8 0. 5.0 0.2 -10 0.48 10 0.6 -20 D L OA D < OW A R 7 HST 0.4 N GT -170 EL E V WA <Ð -90 -160 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.49 10 0.4 90 IN D 0. f3 ZL 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 10 Ω 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 Typical Performance Characteristics MHz (f ) 2110 (f1) 2140 (f2) 2170 (f3) ZL Ω ZS Ω (Complex Source Impedance) (Complex Optimum Load Impedance) 3.8 – j8.7 1.4 + j0.7 3.4 – j8.2 1.4 + j0.8 3.3 – j7.7 1.3 + j0.9 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 15.00 IDQ = 1600 mA POWER GAIN (dB) S 14.50 IDQ = 1400 mA 14.00 13.50 13.00 IDQ = 1200 mA 12.50 IDQ = 1000 mA 12.00 IDQ = 800 mA 11.50 11.00 1 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz TWO-TONE MEASUREMENT 10 MHz TONE SPACING 10 100 1000 OUTPUT POWER (W) PEP Figure 4. Two-Tone Power Gain vs. Output Power and IDQ -20.00 IMD3, THIRD ORDER (dBc) s -25.00 -30.00 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz IDQ = 800 mA -35.00 IDQ = 1000 mA -40.00 IDQ = 1600 mA TWO-TONE MEASUREMENT -45.00 -50.00 10 MHz TONE SPACING -55.00 IDQ = 1200 mA -60.00 -65.00 -70.00 1 10 IDQ = 1400 mA 100 OUTPUT POWER (W) PEP Figure 5. IMD3 vs. Output Power and IDQ 1000 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 -5 -10 -15 IMD (dBc) -20 -25 IM3 -30 IM5 -35 -40 IM7 VDD = 28 V, POUT = 130 W PEP, FO = 2140 MHz -45 -50 -55 -60 0.1 1 10 100 TWO-TONE SPACING (MHz) Figure 6. IMD vs. Tone Spacing 20 50 45 18 40 DRAIN EFF 35 16 25 GAIN (dB)S 14 20 GAIN 12 15 10 2 CARRIER W-CDMA 3 GPP, PEAK TO AVG. = 8.5 dB @ 0.01% CCDF, 10 MHz SPACING 3.84 MHz CBW, POUT = 28 W, VDD = 28 V, IDQ = 1200 mA 10 8 5 0 -5 -10 -15 6 -20 -25 4 2 0 -30 IMD3 -35 -40 ACPR 15 20 25 30 35 OUTPUT POWER (WATTS-AVERAGE)S Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power -45 40 -50 EFF (%), IMD3 (dBc), ACPR (dBc)S 30 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET 20 18 EFF 16 GAIN GAIN (dB)S 14 2 CARRIER W-CDMA 3 GPP, PEAK TO AVG. = 8.5 dB @ 0.01% CCDF, 10 MHz SPACING, 3.84 MHz CBW, POUT = 28 W, VDD = 28 V, IDQ = 1200 mA 12 10 8 RL 6 4 IMD3 2 ACPR 0 2100 2110 2120 2130 2140 2150 2160 2170 50 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 2180 FREQUENCY (MHz)S Figure 8. Broadband Performance 20 10 F1 0 F2 -10 -20 -30 IMD3 IMD3 -40 -50 -60 -70 -80 ACPR ACPR 2 CARRIER W-CDMA 3GPP, PEAK-TO-AVG = 8.5 dB @ 0.01% CCDF 10 MHz SPACING, 3.84 MHz CBW, POUT = 28 W, VDD = 28 V, IDQ = 1200 mA Carrier 2.1625 GHz 5 MHz Figure 9. Spectral Plot Span 50 MHz EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)S Typical Performance Characteristics (continued) AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 14 POWER GAIN (dB) 4 AM-AM (POWER GAIN [dB]) 2 0 -2 13.5 13 -6 -8 VDD = 28 Vdc FO = 2140 MHz IDQ = 1200 mA CW INPUT 12.5 12 -4 AM-PM (PHASE [DEGREES]) 0 10 20 -10 -12 -14 30 40 INPUT POWER PIN (dBm) Figure 10. AM-AM and AM-PM Characteristics 50 -16 PHASE (DEGREES) 14.5 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain. AGR21125EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES M-AGR21125U AGR21125XU YYWWUR XXXXX YYWWUR ZZZZZZZ 1 3 3 ZZZZZZZ 2 2 AGR21125EF 1 AGERE PEAK DEVICES M-AGR21125F AGR21125XF YYWWUR YYWWUR XXXXX ZZZZZZZ ZZZZZZZ PINS: 1. DRAIN 2. GATE 3. SOURCE 1 3 2 3 2 Label Notes: ■ M before the part number denotes model program. X before the part number denotes engineering prototype. ■ ■ ■ ■ The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.