Production Process TQP13-N 0.13 um D pHEMT Foundry Service Features 0.13 um pHEMT (TQP13-N) Process Cross-section • Low cost Optical Lithography 0.13um Gate • High Ft, ~95 GHz • Low Noise, < 0.5 dB in Ku-band • Interconnects: 2 layers (1 Airbridge & 1 local) • High Value MIM Capacitor • Resistors • Thin film resistor • Epi resistor 0.13 um pHEMT Device Cross-Section • Backside Vias • High Volume 150 mm Wafers • Same Baseline as Mass Production Today General Description Applications TriQuint's TQP13-N process is a unique, low-cost 150mm wafer, optical lithography 0.13um pHEMT process used for low noise and medium power applications in Ku-band through V-band applications. The process features a highly repeatable 0.13um self-aligned gate pHEMT FET coupled with high density capacitors, epi resistors, thin film resistors (TFR), and 2 layers of gold interconnect. With typical Ft of 95 GHz, the process is used for V-band automotive radar and high frequency point to point radio applications. With typical NF < .5dB in Ku-band, the process is used for low cost LNB amplifier and convert blocks in consumer Direct Broadcast Satellite dish systems. Simple to use, repeatable and highly competitive TQP13-N is ideal for emerging consumer mmWave applications. • DBS LNB and Down Convert • Automotive Radar • Satellite Communications • Low Noise Point to Point/Point to Multipoint Radio LNA • High Frequency Medium Power • High Frequency Mixer • Fiber Optic TIA and Driver, 10Gb/s - 40Gb/s Page Page11of of4; 4;Rev Rev1.1 0.101/14/2008 2/09/2004 Production Process TQP13-N 0.13 um D pHEMT Foundry Service TQP13-N Process Details Process Details (Typical Specifications) Element Parameter Value Units D-Mode pHEMT Vp (1uA/um) -0.3 V Idss 100 mA/mm Gm (max) 750 mS/mm Breakdown, Vds 8 (typical) 5.5 (min) V Ft @ 250mA/mm 95 GHz Imax (Vgs=0.7 V) 550 mA/mm NF (12 GHz) < 0.5 dB Common Process Element Details Gate Length 0.13 µm Interconnect 2 Metal Layers MIM Caps Value 340 pF/mm2 Resistors NiCr 50 Ohms/sq 105 Ohms/sq Epi Backside Vias Mask Layers Maximum Ratings TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Yes No Backside Vias 13 With BacksideVias 15 Storage Temperature Range -65 to +150 Deg C Operating Temperature Range -55 to +150 Deg C Semiconductors for Communications www.triquint.com Page Page Page 22of of 24; of 4;Rev Rev 5; Rev 1.1 0.12.0 01/14/2008 2/09/2004 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: [email protected] Production Process TQP13-N 0.13 um D pHEMT Foundry Service Gm (mS/mm) TQP13-N Gm vs. Vgs TQP13-N Ft vs. Id TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page Page Page 33of of 34; of 4;Rev Rev 5; Rev 1.1 0.12.0 01/14/2008 2/09/2004 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: [email protected] Production Process TQP13-N 0.13 um D pHEMT Foundry Service Prototyping and Development • • Prototype Development Quickturn (PDQ): • Shared maskset • Standard Cycle Time Prototype Wafer Option (PWO): • Customer-specific Masks, Customer Schedule • 2 wafers delivered • Standard Cycle Time Training • GaAs Design Classes: • Half Day Introduction; Upon Request • Three Days Technical Training; Fall & Spring 0.13 at TriQuint Oregon um Lg facility Manufacturing Services • • • • • • • • • Mask Making Production 150 Wafer Fab Wafer Thinning Wafer Sawing Backside Vias DC Die Sort Testing RF On-Wafer Testing Plastic Packaging RF Packaged Part Testing Please contact your local TriQuint Semiconductor Representative/ Distributor or Foundry Services Division Marketing for Additional information: E-mail: [email protected]; Phone: (503) 615-9000 Fax: (503) 615-8905 TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124 Semiconductors for Communications www.triquint.com Page Page 4 of44; ofRev 5; Rev 1.12.0 01/14/2008 7/22/03 Phone: 503-615-9000 Fax: 503-615-8905 Email: [email protected]