Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1959 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 Tstg: -55℃ to +150℃ TJ: 150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 35V , IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5 V , 0.1 µA IC=0 hFE (1) VCE=1 V, IC= 100mA 70 400 hFE (2) VCE=6 V, IC= 400mA 25 VCE(sat) IC= 100 mA, IB= 10 mA 0.25 V Base-emitter voltage VBE VCE= 1V, IC= 100 mA 1.0 V Transition frequency fT VCE= 12 V, IC= 2mA DC current gain Collector-emitter saturation voltage 200 MHz CLASSIFICATION OF hFE Rank O Y GR hFE (1) 70-140 120-240 200-400 hFE (2) 25(min) 40(min) Range