MICROSEMI MDS1100

MDS1100
1100 Watts, 50 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55TU-1
The MDS1100 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
8750
Device Dissipation @ 25°C1
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65
Emitter to Base Voltage (BVebo)
4.5
Collector Current (Ic)
100
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTICS
Pout
Power Out
Pg
ηc
Power Gain
Collector Efficiency
RL
Return Loss
Tr
Rise Time
Pd
Pulse Droop
VSWR
TEST CONDITIONS
MIN
F = 1030 MHz, Vcc = 50 Volts
1000
W
Note 2
8.9
45
dB
%
11
dB
F = 1030 MHz, Vcc = 50 Volts
Note 2
1
TYP
MAX
UNITS
100
nS
0.7
dB
4.0:1
Load Mismatch Tolerance
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
θjc1
NOTES:
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 50 mA
Ic = 100 mA
Vce = 5V, Ic = 5A
3.5
65
20
V
V
0.02
°C/W
1. At rated output power and pulse conditions
2.
128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts
Rev B, September 2005
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Efficiency vs. Output Power
Gain vs. Output Power
48
9.6
46
Efficiency (%)
Gain (dBm)
9.4
9.2
9
8.8
8.6
8.4
44
42
40
38
36
34
32
8.2
0
200
400
600
800
1000
1200
30
200
400
600
800
1000
1200
Pout (W)
Pout (W)
Zin
Zcl
R (ohms)
jX (ohms)
Zin
1.75
+j2.37
Zcl
0.60
-j1.62
Frequency = 1030 MHz, Vcc = 50V, Pin = 130W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS1100
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS1100
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.