WEDC WE128K32P

White Electronic Designs
WE128K32-XXX
128Kx32 EEPROM MODULE, SMD 5962-94585
FEATURES
Access Times of 120**, 140, 150, 200, 250, 300ns
Page Write Cycle Time: 10ms Max
Packaging:
Data Polling for End of Write Detection
• 66-pin, PGA Type, 27.3mm (1.075") square,
Hermetic Ceramic HIP (Package 400)
• 68 lead, 22.4mm sq. CQFP (G2T), 4.57mm
(0.180") high, (Package 509)
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
5 Volt Power Supply
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8
Write Endurance 10,000 Cycles
Data Retention Ten Years Minimum (at +25°C)
Commercial, Industrial and Military Temperature
Ranges
Low Power CMOS
Automatic Page Write Operation
WE128K32-XG2TX - 8 grams typical
WE128K32-XH1X - 13 grams typical
** 120ns not available for SMD product
*This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION FOR
WE128K32N-XH1X
Pin Description
Top View
1
12
23
34
45
I/O0-31
A0-16
WE1-4#
CS1-4#
OE#
VCC
GND
NC
56
I/O8
WE2#
I/O15
I/O24
VCC
I/O31
I/O9
CS2#
I/O14
I/O25
CS4#
I/O30
I/O10
GND
I/O13
I/O26
WE4#
I/O29
A13
I/O11
I/O12
A6
I/O27
I/O28
A14
A10
OE#
A7
A3
A0
A15
A11
NC
NC
A4
A1
A16
A12
WE1#
A8
A5
A2
NC
VCC
I/O7
A9
WE3#
I/O23
I/O0
CS1#
I/O6
I/O16
CS3#
I/O22
I/O1
NC
I/O5
I/O17
GND
I/O21
I/O4
I/O18
Block Diagram
W E 1 # CS 1 #
I/O3
I/O2
22
33
I/O20
I/O19
44
55
W E 2 # CS 2 #
W E 3 # CS 3 #
W E 4 # CS 4 #
128K x 8
128K x 8
128K x 8
OE#
A0-16
128K x 8
11
Data Input/Output
Address Inputs
Write Enable
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
66
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March 2006
Rev. 10
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White Electronic Designs
WE128K32-XXX
FIGURE 3 – PIN CONFIGURATION FOR WE128K32-XG2TX
NC
A0
A1
A2
A3
A4
A5
CS3#
GND
CS4#
WE1#
A6
A7
A8
A9
A10
VCC
Top View
Pin Description
I/O0-31
A0-16
WE1-4#
CS1-4#
OE#
VCC
GND
NC
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
Data Input/Output
Address Inputs
Write Enable
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
NC
NC
NC
NC
WE2#
WE3#
WE4#
OE#
CS2#
A16
CS1#
A15
A14
A13
A12
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A11
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
VCC
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
W E 1 # CS 1 #
W E 2 # CS 2 #
W E 3 # CS 3 #
W E 4 # CS 4 #
128K x 8
128K x 8
128K x 8
128K x 8
OE#
A0-16
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
The WEDC 68 lead CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ
or 68 PLCC. But it has the
TCE and lead inspection
advantage of the CQFP
form.
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March 2006
Rev. 10
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WE128K32-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Voltage on OE# and A9
Symbol
TA
TSTG
VG
-55 to +125
-65 to +150
-0.6 to + 6.25
-0.6 to +13.5
TRUTH TABLE
Unit
°C
°C
V
V
CS#
H
L
L
X
X
X
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Symbol
VCC
VIH
VIL
TA
TA
Min
4.5
2.0
-0.5
-55
-40
Max
5.5
VCC + 0.3
+0.8
+125
+85
WE#
X
H
L
X
H
X
Mode
Standby
Read
Write
Out Disable
Write
Inhibit
Data I/O
High Z
Data Out
Data In
High Z/Data Out
CAPACITANCE
TA = +25°C
Parameter
OE# capacitance
WE1-4# capacitance
HIP (PGA)
CQFP G2T
CS1-4# capacitance
Data I/O capacitance
Address input capacitance
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
OE#
X
L
H
H
X
L
Unit
V
V
V
°C
°C
Symbol
COE
CWE
CCS
CI/O
CAD
Conditions
Max Unit
VIN = 0 V, f = 1.0 MHz 50 pF
pF
VIN = 0 V, f = 1.0 MHz
20
20
VIN = 0 V, f = 1.0 MHz 20 pF
VI/O = 0 V, f = 1.0 MHz 20 pF
VIN = 0 V, f = 1.0 MHz 50 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current (x32)
Standby Current
Output Low Voltage
Output High Voltage
Symbol
ILI
ILOx32
ICCx32
ISB
VOL
VOH
Conditions
VCC = 5.5, VIN = GND to VCC
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz
CS# = VIH, OE# = VIH, f = 5MHz
IOL = 2.1mA, VCC = 4.5V
IOH = -400µA, VCC = 4.5V
Min
Max
10
10
250
2.5
0.45
2.4
Unit
µA
µA
mA
mA
V
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
FIGURE 3
AC Test Circuit
AC TEST CONDITIONS
IOL
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Current Source
Vz ~
~ 1.5V
Bipolar Supply
D.U.T
Ceff = 50 pf
Current Source
Typ
VIL = 0, VIH = 3.0
5
1.5
1.5
Unit
V
ns
V
V
Notes: VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
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March 2006
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WE128K32-XXX
AC WRITE CHARACTERISTICS
WRITE
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
A write cycle is initiated when OE# is high and a low pulse
is on WE# or CS# with CS# or WE# low. The address
is latched on the falling edge of CS# or WE# whichever
occurs last. The data is latched by the rising edge of CS#
or WE#, whichever occurs first. A byte write operation will
automatically continue to completion.
Write Cycle Parameter
write cycle timing
Figures 5 and 6 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing
the CS# line low. Write enable consists of setting the WE#
line low. The write cycle begins when the last of either CS#
or WE# goes low.
Symbol
Min
Max
Unit
10
ms
Write Cycle Time, TYP = 6ms
tWC
Address Set-up Time
tAS
0
ns
ns
Write Pulse Width (WE# or CS#)
tWP
100
Chip Select Set-up Time
tCS
0
ns
Address Hold Time
tAH
100
ns
Data Hold Time
tDH
10
ns
Chip Select Hold Time
tCSH
0
ns
Data Set-up Time
tDS
50
ns
Output Enable Set-up Time
tOES
0
ns
Output Enable Hold Time
tOEH
0
ns
Write Pulse Width High
tWPH
50
ns
The WE# line transition from high to low also initiates
an internal 150 µsec delay timer to permit page mode
operation. Each subsequent WE# transition from high to
low that occurs before the completion of the 150 µsec time
out will restart the timer from zero. The operation of the
timer is the same as a retriggerable one-shot.
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March 2006
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WE128K32-XXX
FIGURE 5 – WRITE WAVEFORMS WE# CONTROLLED
t WC
OE#
t OEH
t OES
ADDRESS
t AS
CS1-4#
tCSH
t AH
t CS
WE1-4#
t WP
t WPH
t DS
t DH
DATA IN
FIGURE 6 – WRITE WAVEFORMS CS# CONTROLLED
t WC
OE#
t OEH
t OES
ADDRESS
t AS
tCSH
t AH
WE1 - 4#
t CS
CS1 - 4#
t WP
t WPH
t DS
t DH
DATA IN
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March 2006
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WE128K32-XXX
READ
The WE128K32-XXX stores data at the memory location
determined by the address pins. When CS# and OE# are
low and WE# is high, this data is present on the outputs.
When CS# and OE# are high, the outputs are in a high
impedance state. This two line control prevents bus
contention.
AC READ CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Read Cycle Parameter
Symbol
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Add. Change, OE# or CS#
Output Enable to Output Valid
Chip Select or OE# to High Z Output
tRC
tACC
tACS
tOH
tOE
tDF
-120
Min
120
-140
Max
Min
140
120
120
0
0
50
60
-150
Max
Min
150
140
140
0
0
55
70
-200
Max
Min
200
150
150
0
0
55
70
-250
Max
Min
250
200
200
0
0
55
70
-300
Max
Min
300
250
250
0
0
85
70
Max
300
300
0
0
85
70
Unit
ns
ns
ns
ns
ns
ns
FIGURE 7 – READ WAVEFORMS
t RC
ADDRESS
ADDRESS VALID
CS#
t ACS
t OE
OE#
t DF
t ACC
OUTPUT
t OH
HIGH Z
OUTPUT
VALID
Notes:
OE# may be delayed up to tACS - tOE after the falling edge of CS# without impact
on tOE or by tACC - tOE after an address change without impact on tACC.
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March 2006
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WE128K32-XXX
DATA POLLING CHARACTERISTICS
DATA POLLING
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
The WE128K32-XXX offers a data polling feature which
allows a faster method of writing to the device. Figure 8
shows the timing diagram for this function. During a byte
or page write cycle, an attempted read of the last byte
written will result in the complement of the written data
on D7 (for each chip.) Once the write cycle has been
completed, true data is valid on all outputs and the next
cycle may begin. Data polling may begin at any time during
the write cycle.
Parameter
Data Hold Time
OE# Hold Time
OE# To Output Valid
Write Recovery Time
Symbol
tDH
tOEH
tOE
tWR
Min
10
10
Max
55
0
Unit
ns
ns
ns
ns
FIGURE 8 – DATA POLLING WAVEFORMS
WE1-4#
CS1-4#
t OEH
OE#
I/O7
t OE
t DH
HIGH Z
t WR
ADDRESS
TOGGLE BUT CHARACTERISTICS(1)
TOGGLE BIT: In addition to DATA# Polling another method for determining the end of
a write cycle is provided. During the write operation, successive attempts to read data
from the device will result in I/O6 toggling between one and zero. Once the write has
completed, I/O6 will stop toggling and valid data will be read. Reading the toggle bit may
begin at any time during the write cycle.
Symbol
Parameter
Min
Max
Units
tDH
Data Hold Time
10
ns
tOEH
OE# Hold Time
10
ns
tOE
OE# to Output Delay
tOEHP
OE# High Pulse
tWR
Write Recovery Time
ns
150
ns
0
ns
WE#
CS#
tOEH
OE#
tDH
tOE
I/O6 (2)
HIGH Z
tWR
NOTE:
1. Toggling either OE# or CS# or both OE# and CS# will operate toggle bit.
2. Beginning and ending state of I/O6 will vary
3. Any address location may be used but the address should not vary.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 10
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WE128K32-XXX
PAGE WRITE CHARACTERISTICS
PAGE WRITE OPERATION
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
The WE128K32-XXX has a page write operation that
allows one to 128 bytes of data to be written into the device
and consecutively loads during the internal programming
period. Successive bytes may be loaded in the same
manner after the first data byte has been loaded. An
internal timer begins a time out operation at each write
cycle. If another write cycle is completed within 150µs
or less, a new time out period begins. Each write cycle
restarts the delay period. The write cycles can be continued
as long as the interval is less than the time out period.
Page Mode Write Characteristics
Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Address Hold Time (1)
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
The usual procedure is to increment the least significant
address lines from A0 through A6 at each write cycle. In
this manner a page of up to 128 bytes can be loaded in
to the EEPROM in a burst mode before beginning the
relatively long interval programming cycle.
Symbol
tWC
tAS
tAH
tDS
tDH
tWP
tBLC
tWPH
Min
Max
10
0
100
50
10
100
150
50
Unit
ms
ns
ns
ns
ns
ns
µs
ns
1. Page address must remain valid for duration of write cycle.
After the 150µs time out is completed, the EEPROM
begins an internal write cycle. During this cycle the entire
page of bytes will be written at the same time. The internal
programming cycle is the same regardless of the number
of bytes accessed.
FIGURE 9 – PAGE MODE WRITE WAVEFORMS
OE#
CS#
WE#
ADDRESS
DATA
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March 2006
Rev. 10
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WE128K32-XXX
FIGURE 10 – SOFTWARE BLOCK DATA PROTECTION ENABLE ALGORITHM(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
WRITES ENABLED(2)
LOAD DATA XX
TO
ANY ADDRESS(4)
LOAD LAST BYTE
TO
LAST ADDRESS
ENTER DATA
PROTECT STATE
NOTES:
1. Data Format: D7 - D0 (Hex);
Address Format: A16 - A0 (Hex).
2. Write Protect state will be activated at end of write even if no other data is loaded.
3. Write Protect state will be deactivated at end of write period even if no other data is loaded.
4. 1 to 128 bytes of data to be loaded.
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March 2006
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FIGURE 10 –
SOFTWARE BLOCK DATA PROTECTION
DISABLE ALGORITHM(1)
SOFTWARE DATA PROTECTION
A software write protection feature may be enabled
or disabled by the user. When shipped by White
Microelectronics, the WE-128K32-XXX has the feature
disabled. Write access to the device is unrestricted.
To enable software write protection, the user writes three
access code bytes to three special internal locations.
Once write protection has been enabled, each write to the
EEPROM must use the same three byte write sequence
to permit writing. After setting software data protection,
any attempt to write to the device without the three-byte
command sequence will start the internal write timers. No
data will be written to the device, however, for the duration
of tWC. The write protection feature can be disabled by
a six byte write sequence of specific data to specific
locations. Power transitions will not reset the software
write protection.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
Each 128K byte block of the EEPROM has independent
write protection. One or more blocks may be enabled and
the rest disabled in any combination. The software write
protection guards against inadvertent writes during power
transitions, or unauthorized modification using a PROM
programmer.
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 20
TO
ADDRESS 5555
LOAD DATA XX
TO
ANY ADDRESS(4)
WE128K32-XXX
EXIT DATA
HARDWARE DATA PROTECTION
PROTECT STATE(3)
These features protect against inadvertent writes to the
WE128K32-XXX. These are included to improve reliability
during normal operation:
LOAD LAST BYTE
TO
LAST ADDRESS
a)
VCC power on delay
As VCC climbs past 3.8V typical the device will wait
5msec typical before allowing write cycles.
b)
VCC sense
c)
Write inhibiting
While below 3.8V typical write cycles are inhibited.
Holding OE# low and either CS# or WE# high
inhibits write cycles.
d)
Noise filter
Pulses of <8ns (typ) on WE# or CS# will not initiate
a write cycle.
NOTES:
1. Data Format: D7 - D0 (Hex);
Address Format: A16 - A0 (Hex).
2. Write Protect state will be activated at end of write even if
no other data is loaded.
3. Write Protect state will be deactivated at end of write
period even if no other data is loaded.
4. 1 to 128 bytes of data may be loaded.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 10
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WE128K32-XXX
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
4.60 (0.181)
MAX
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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March 2006
Rev. 10
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WE128K32-XXX
PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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March 2006
Rev. 10
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WE128K32-XXX
FIGURE 12 – ALTERNATE PIN CONFIGURATION FOR WE128K32NP-XH1X
Top View
1
12
23
Pin Description
34
45
I/O8
WE2#
I/O15
I/O24
VCC
I/O31
I/O9
CS2#
I/O14
I/O25
CS4#
I/O30
I/O10
GND
I/O13
I/O26
WE4#
I/O29
A14
I/O11
I/O12
A7
I/O27
I/O28
A16
A10
OE#
A12
A4
A1
A11
A9
NC
NC
A5
A2
A0
A15
WE1#
A13
A5
A3
NC
VCC
I/O7
A8
WE3#
I/O23
I/O0
CS1#
I/O6
I/O16
CS3#
I/O22
I/O1
NC
I/O5
I/O17
GND
I/O21
I/O2
I/O3
I/O4
I/O18
I/O19
I/O20
11
22
33
44
55
I/O0-31
A0-16
WE1-4#
CS1-4#
OE#
VCC
GND
NC
56
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
W E 1 # CS 1 #
W E 2 # CS 2 #
W E 3 # CS 3 #
W E 4 # CS 4 #
128K x 8
128K x 8
128K x 8
128K x 8
OE#
A0-16
66
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
ORDERING INFORMATION
W E 128K32 X - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = Compliant
M = Military Screened
I = Industrial
C = Commercial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex In-line Package, HIP (Package 400*)
G2T = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 509)
ACCESS TIME (ns)
IMPROVEMENT MARK
N = No Connect at pins 8, 21, 28, and 39 in HIP for upgrade
P = Alternate Pin Configuration for HIP package
ORGANIZATION 128K x 32
User Configurable as 256K x 16 or 512K x 8
EEPROM
WHITE ELECTRONIC DESIGNS CORP.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 10
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WE128K32-XXX
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128K x 32 EEPROM Module
300ns
66 pin HIP (H1)
5962-94585 01H5X
128K x 32 EEPROM Module
250ns
66 pin HIP (H1)
5962-94585 02H5X
128K x 32 EEPROM Module
200ns
66 pin HIP (H1)
5962-94585 03H5X
128K x 32 EEPROM Module
150ns
66 pin HIP (H1)
5962-94585 04H5X
128K x 32 EEPROM Module
140ns
66 pin HIP (H1)
5962-94585 05H5X
128K x 32 EEPROM Module
300ns
66 pin HIP (H1, P type pinout)
5962-94585 01H6X
128K x 32 EEPROM Module
250ns
66 pin HIP (H1, P type pinout)
5962-94585 02H6X
128K x 32 EEPROM Module
200ns
66 pin HIP (H1, P type pinout)
5962-94585 03H6X
128K x 32 EEPROM Module
150ns
66 pin HIP (H1, P type pinout)
5962-94585 04H6X
128K x 32 EEPROM Module
140ns
66 pin HIP (H1, P type pinout)
5962-94585 05H6X
128K x 32 EEPROM Module
300ns
68 lead CQFP/J (G2T)
5962-94585 01HMX
128K x 32 EEPROM Module
250ns
68 lead CQFP/J (G2T)
5962-94585 02HMX
128K x 32 EEPROM Module
200ns
68 lead CQFP/J (G2T)
5962-94585 03HMX
128K x 32 EEPROM Module
150ns
68 lead CQFP/J (G2T)
5962-94585 04HMX
128K x 32 EEPROM Module
140ns
68 lead CQFP/J (G2T)
5962-94585 05HMX
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 10
14
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com