APTGT150TL60G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 150A @ Tc = 80°C VBUS Application • Solar converter • Uninterruptible Power Supplies CR1 G1 Q1 Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration E1 CR5 CR2 G2 Q2 NEUTRAL E2 OUT CR6 CR3 G3 Q3 E3 CR4 G4 Q4 E4 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant 0/VBUS VBUS 0/VBUS G1 E1 G4 E4 NEUTRAL E2 E3 G2 G3 OUT Q1 to Q4 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Max ratings 600 200 150 300 ±20 480 Reverse Bias Safe Operating Area Tj = 150°C 300A @ 550V RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT150TL60G – Rev0 March, 2009 Symbol VCES APTGT150TL60G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 150A Tj = 150°C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V Min 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Q1 to Q4 Dynamic Characteristics QG Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=150A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 150A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 150A RG = 3.3Ω Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C VGE = ±15V VBus = 300V IC = 150A RG = 3.3Ω Junction to Case Thermal Resistance Min Typ 9200 580 270 pF 1.6 µC 115 45 225 ns 55 130 50 ns 300 70 0.85 1.5 4.1 5.3 mJ mJ 750 A 0.31 www.microsemi.com °C/W 2-7 APTGT150TL60G – Rev0 March, 2009 Symbol Cies Coes Cres APTGT150TL60G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions VR=600V IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C Tj = 25°C Tj = 150°C 9.9 1.1 2.4 Max 150 350 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 0.77 °C/W Max Unit V CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 150A VGE = 0V IF = 150A VR = 300V di/dt =3000A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 150 350 150 1.6 1.5 130 225 6.9 Tj = 150°C Tj = 25°C Tj = 150°C 14.5 1.6 3.5 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 0.52 °C/W Max Unit V Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals www.microsemi.com M6 M5 Min 2500 -40 -40 -40 3 2 Typ 175 125 100 5 3.5 280 °C N.m g 3-7 APTGT150TL60G – Rev0 March, 2009 Symbol VISOL TJ TSTG TC APTGT150TL60G SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=3.3Ω T J=150°C 60 T c =85°C 40 Hard switching 20 0 0 50 100 150 200 IC (A) www.microsemi.com 4-7 APTGT150TL60G – Rev0 March, 2009 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT150TL60G Output Characteristics (VGE=15V) Output Characteristics 250 250 TJ = 150°C VGE=19V TJ=25°C 200 200 VGE=13V 150 TJ=150°C 150 IC (A) IC (A) TJ=125°C 100 100 50 50 VGE=15V VGE=9V TJ=25°C 0 0 0 0.5 1 1.5 2 0 2.5 0.5 1 1.5 2 VCE (V) VCE (V) 8 TJ=25°C VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 150 E (mJ) IC (A) 200 TJ=125°C 100 3.5 Eoff 4 2 TJ=150°C 50 3 Energy losses vs Collector Current Transfert Characteristics 250 2.5 Eon TJ=25°C 0 0 5 6 7 8 9 10 0 11 50 100 Switching Energy Losses vs Gate Resistance 200 250 Reverse Bias Safe Operating Area 10 350 300 Eoff 8 250 Eoff 6 IC (A) E (mJ) 150 IC (A) VGE (V) 4 VCE = 300V VGE =15V IC = 150A TJ = 150°C 2 Eon 200 150 100 VGE=15V TJ=150°C RG=3.3Ω 50 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-7 APTGT150TL60G – Rev0 March, 2009 Thermal Impedance (°C/W) 0.35 APTGT150TL60G CR1 to CR4 Typical performance curve Forward Characteristic of diode 200 175 150 IF (A) 125 100 75 TJ=150°C 50 25 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Energy losses vs Collector Current Switching Energy Losses vs Gate Resistance 4 3 VCE = 300V IC = 100A TJ = 150°C 2.5 3 E (mJ) E (mJ) 2 VCE = 300V RG = 3.3Ω TJ = 150°C 1.5 1 2 1 0.5 0 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 IF (A) Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-7 APTGT150TL60G – Rev0 March, 2009 Thermal Impedance (°C/W) 0.8 APTGT150TL60G CR5 & CR6 Typical performance curve Forward Characteristic of diode 250 IF (A) 200 150 100 TJ=150°C 50 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 4 5 VCE = 300V IF = 150A TJ = 150°C 4 Err (mJ) Err (mJ) 3 VCE = 300V RG = 3.3Ω TJ = 150°C 2 1 3 2 1 0 0 0 5 10 15 20 Gate Resistance (ohms) 0 25 50 100 150 200 250 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGT150TL60G – Rev0 March, 2009 Rectangular Pulse Duration in Seconds