2N4003K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE Features: * Gate Pretection Diode DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. SOURCE 2 3 1 2 Application: * Level Shifters * Level Switches * Low Side Load Switches * Portable Applications SOT-23 Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage V DS 30 Gate-Source Voltage VG S ±20 Continuous Drain Current 1 ,Steady State (TA=25°C) ID (TA=85°C) Power Dissipation1 ,Steady State Continuous Drain Current 1 ,t<10s PD (TA=25°C) ID (TA=85°C) Power Dissipation1 0.5 0.37 0.69 0.56 0.40 Unit V A W A PD 0.83 W IDM 1.7 A R θJA 180 150 300 °C /W TJ +150 °C Storage Temperature Range Tstg -55~+150 °C Source Current (Body Diode) IS 1.0 A Lead Temperature for Soldering Purposes (1/8” from case 10s) TL 260 °C ,t<5s Pulsed Drain Current Maximum Junction-ambient ,Steady State1 ,t<10s1 ,Steady State2 Operating Junction Temperature Range Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. Device Marking 2N4003K = TR8 WEITRON http://www.weitron.com.tw 1/6 08-Sep-09 2N4003K Electrical Characteristics (TA =25°C Unless otherwise noted) Characteristic Symbol Min Typ Max V (BR)DSS 30 - - Unit Static Drain-Source Breakdown Voltage V G S =0, ID =100 A V Gate-Source Threshold Voltage3 V G S(Th) 0.8 - 1.6 IGSS - - ±1.0 IDSS - - 1 RDS(on) - 1.5 1.0 2.0 1.5 Ω g fs - 0.33 - S Input Capacitance VGS=0V, VDS=5.0V, f=1.0MHz Ciss - 21 Output Capacitance VGS=0V, VDS=5.0V, f=1.0MHz Coss - 19.7 - pF Reverse Transfer Capacitance VGS=0V, VDS=5.0V, f=1.0MHz Crss - 8.1 - V DS =V GS , ID =250 A Gate-Source Leakage Current V G S = ± 10V Zero Gate Voltage Drain Current (TJ =25˚C) V DS =30V,VG S =0 Drain-Source On-Resistance3 V G S =2.5V,I D = 10mA V G S =4.0V,I D =10mA Forward Transconductance3 V DS =3.0V, ID =10mA Dynamic WEITRON http://www.weitron.com.tw 2/6 - 08-Sep-09 2N4003K Switching 4 Turn-on Delay Time VGS =4.5V, VDD=5.0V,ID=0.1A, RG=50Ω t d(on) - 16.7 - Rise Time4 VGS =4.5V, VDD=5.0V,ID=0.1A, RG=50Ω tr - 47.9 ns 4 td VGS =4.5V, VDD=5.0V,ID=0.1A, RG=50Ω ) - 65.1 - Fall Time4 VGS =4.5V, VDD=5.0V,ID=0.1A, RG=50Ω tf - 64.2 - Total Gate Charge VGS=5.0V, VDS =24V, I D=0.1A Qg - 1.15 - Threshold Gate Charge VGS=5.0V, VDS =24V, I D=0.1A Q g(TH) - 0.15 - Gate-Source Charge VGS=5.0V, VDS =24V, I D=0.1A Q gs - 0.32 - Gate-Drain Change VGS=5.0V, VDS =24V, I D=0.1A Qgd - 0.23 - nC Source-Drain Diode Characteristics Forward On Voltage VGS =0V, IS =10mA TJ = 25°C TJ = 125°C Reverse Recovery Time VGS =0V, IS =10mA, dls/dt=8A/μs V SD - 0.65 0.45 0.7 - V trr - 14 - nS Note : 3. Pulse Test: pulse width ≤ 300 μs, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. WEITRON http://www.weitron.com.tw 3/6 08-Sep-09 2N4003K TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.6 1.6 VDS ≥ 10 V VGS = 10 V to 5 V 0.8 4V 0.4 3.5 V TJ = 25°C 0.8 TJ = 125°C 0.4 0 0 1 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 1 4 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Transfer Characteristics ID = 0.2 A 8 6 4 2 0 2.4 2.8 3.2 3.6 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE ( ) 10 VGS = 10 V TJ = 125°C 0.8 0.6 TJ = 25°C 0.4 TJ = −55°C 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) Figure 4. On Resistance vs. Drain Current and Temperature 1000 1.80 VGS = 0 V ID = 0.3 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.60 5 1 Figure 3. On Resistance vs. Gate to Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE ( ) (NORMALIZED) TJ = −55°C 1.2 2.5 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE ( ) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4.5 V 1.2 1.40 1.20 1.00 TJ = 150°C 100 TJ = 125°C 0.80 0.60 −25 10 −50 0 25 50 75 100 125 150 Figure 5. On Resistance Variation with Temperature http://www.weitron.com.tw 5 10 15 20 30 25 VDS, DRAIN TO SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) WEITRON 0 4/6 Figure 6. Drain to Source Leakage Current vs. Voltage 08-Sep-09 2N4003K VGS, GATE−TO−SOURCE VOLTAGE (V) 50 C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V 40 30 Ciss 20 Coss 10 0 Crss 0 4 12 8 TJ = 25°C ID = 0.1 A 4 3 2 1 0 0.4 0 20 16 5 DRAIN TO SOURCE VOLTAGE (V) 1.2 0.8 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate to Source & Drain to Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) 1 VGS = 0 V 0.1 0.01 0.001 0 .4 TJ = 150°C TJ = 25°C 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current WEITRON http://www.weitron.com.tw 5/6 08-Sep-09 2N4003K SOT-23 Outline Dimension Unit:mm SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 08-Sep-09