WEITRON 2N7002KDW

2N7002KDW
Dual N-Channel MOSFET
6 5
P b Lead(Pb)-Free
1
Features:
2
4
3
SOT-363(SC-88)
* Low On-Resistance
* Fast Switching Speed
* Low-voltage drive
* Easily designed drive circuits
* ESD Protected:2000V
6
5
4
D2
G1
S1
S2
G2
D1
1
2
3
Mechanical Data:
*Case: SOT-363, Molded Plastic
*Case Material-UL Flammability Rating 94V-0
*Terminals: Solderable per MIL-STD-202, Method 208
*Weight: 0.006 grams(approx.)
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
115
IDP*1
800
ID
115
IDRP*1
800
PD
225
TJ, Tstg
-55 to 150
Drain Current
Reverse Drain Current
Continuous
Pulsed
Continuous
Pulsed
Power Dissipation (TA=25°C)
Operating Junction and Storage
Temperature Range
mA
mA
mW
°C
Device Marking
2N7002KDW=RK
Note
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board
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2N7002KDW
Electrical Characteristics @ TA=25 unless otherwise specified,per element
Characteristic
Symbol
Min
Typ
MAX
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VGS=0V, ID=10µA
V(BR)DSS
60
-
-
V
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
IDSS
-
-
1.0
µA
Gate-source Leakage
VGS=±20V, VDS=0V
IGSS
-
-
±10
µA
VGS(th)
1.0
1.85
2.5
V
-
-
7.5
-
-
7.5
ON CHARACTERISTICS
Gate Threshold Voltage
VDS= VGS,ID = 250uA
VGS=10V, ID =0.5A
Static Drain-Source On-Resistance
RDS(ON)
VGS=5V, ID=0.05A
Ω
VDS=10V, ID=0.2A
gfs *
80
-
-
mS
Input Capacitance
VDS=25V
CiSS
-
25
50
pF
Output Capacitance
VGS=0V
COSS
-
10
25
pF
Reverse Transfer Capacitance
f=1.0MHz
CrSS
-
3.0
5.0
pF
Forward transfer admittance
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
ID=0.2A,VDD=30V,
TD(ON) *
-
12
20
nS
Turn-Off Delay Time
VGS=10V,RL=150Ω,RG=10Ω TD(OFF)*
-
20
30
nS
* Pw ≤ 300µs, Duty cycle ≤ 1%
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2N7002DKW
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SOT-363 Outline Dimensions
Unit:mm
A
SOT-363
6
5
4
B C
1
2
D
3
E
H
K
J
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M
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Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25
09-Jan-09