2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead(Pb)-Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. SOT-323(SC-70) 2 SOURCE Features: * Simple Drive Requirement * Small Package Outline Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current T A=25°C ID 100 mA Pulsed Drain Current (tp ≤ 10µS) IDM 400 mA Power Dissipation (TA=25°C)* PD 200 mW Operating Junction Temperature Range TJ +150 °C Tstg -55 to +150 °C Storage Temperature Range * With each pin mounted on the recommended lands. Device Marking 2SK3018 = KN WEITRON http://www.weitron.com.tw 1/5 30-Oct-09 2SK3018W Electrical Characteristics(TA=25°C Unless otherwise noted) Min Typ Max Unit V(BR)DSS 30 - - V Gate-Threshold Voltage VDS=3V , ID=100µA VGS (th) 0.8 - 1.5 V Gate-Source Leakage Current VGS=±20V IGSS - - ±1.0 µA Drain-Source Leakage Current VDS=30V, VGS=0 IDSS - - 1.0 µA RDS(on) - 5.0 7.0 8.0 13 Ω gfs 20 - - mS Input Capacitance VDS=5V, VGS=0V, f=1.0MHz Ciss - 13 - Output Capacitance VDS=5V, VGS=0V, f=1.0MHz Coss - 9 - Reverse Transfer Capacitance VDS=5V, VGS=0V, f=1.0MHz Crss - 4 - Turn-On Time VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω td(on) - 15 - Rise time VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω tr - 35 - Turn-Off delay Time VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω td(on) - 80 - Fall time VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω tr - 80 - Characteristic Symbol Static Drain-Source Breakdown Voltage VGS=0V, ID=10µA Static Drain-Source On-Resistance VGS=4V, I D=10mA VGS=2.5V, ID=1mA Forward Transconductance VDS=3V, ID=10mA Dynamic pF Switching WEITRON http://www.weitron.com.tw ns 2/5 30-Oct-09 2SK3018W TYPICAL ELECTRICAL CHARACTERISTICS 200m 3V Ta=25°C Pulsed 3.5V 0.1 2.5V 0.05 2V 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 50 Ta=125°C 75°C 25°C - 25°C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 2 1 0.005 0.02 0.05 0.1 0.2 ID=100mA 6 ID=50mA 4 3 2 0.05 0.01 0.005 0 −50 −25 0.001 0.0001 0.0002 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. channel temperature WEITRON http://www.weitron.com.tw 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.8 Forward transfer admittance vs. drain current 3/5 125 150 5 I D=0.1A ID=0.05A 5 10 15 20 Fig.6 Static drain-source on-state resistance vs. gate-source voltage 0.02 0.002 100 GATE-SOURCE VOLTAGE : VGS (V) Ta=−25°C 25°C 75°C 125°C 1 75 10 0 0 0.5 VDS=3V Pulsed 0.1 50 Ta=25°C Pulsed Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.01 25 15 5 0.5 0.001 0.002 0 Fig.3 Gate threshold voltage vs. channel temperature 0.2 0 0 −50 −25 CHANNEL TEMPERATURE : Tch (°C) 10 VGS=4V Pulsed 5 0.5 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current (Ι ) 7 1 4 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) 8 1.5 Fig.2 Typical transfer characteristics VGS=4V Pulsed 20 VDS=3V ID=0.1mA Pulsed GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 3 2 1 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2 20m REVERSE DRAIN CURRENT : IDR (A) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m DRAIN CURRENT : I D (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.15 VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage (Ι) 30-Oct-09 50 Ta=25°C Pulsed 100m 20 50m 20m 10m VGS=4V 0V 5m 2m 1m 0.5m 1000 Ta=25°C f=1MHZ VGS=0V Ciss 10 5 Coss Crss 2 Ta=25°C VDD=5V VGS=5V RG =10Ω Pulsed tf 500 SWITCHING TIME : t (ns) 200m CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 2SK3018W td(off) 200 100 1 50 20 tr td(on) 10 5 0.2m 0.1m 0 0.5 1 0.5 0.1 1.5 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Switching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS RL ton WEITRON 10% 90% 90% tr td(on) http://www.weitron.com.tw 50% 10% VDS VDD Fig.13 Switching time measurement circuit 90% 50% 10% VGS td(off) tf toff Fig.14 Switching time waveforms 4/5 30-Oct-09 2SK3018W SOT-323 Outline Demensions Unit:mm A SOT-323 B T OP V IE W Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 5/5 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 30-Oct-09