MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 500m AMPERES P b Lead(Pb)-Free 100 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 6 5 1 2 4 3 SOT-363 Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) SOT-363 Outline Dimensions Unit:mm A 6 5 SOT-363 4 B C 1 2 D 3 E H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.40 0.30 2.20 1.80 0.10 0.80 1.10 0.25 0.40 0.10 0.25 04-Jan-06 MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Maximum Ratings@ TA= 25°C unless otherwise specified Characteristic Symbol Value Unit VRM 100 V VRRM VRWM VR 80 V VR(RMS) 57 V Forward Continuous Current (Note 1) IFM 500 mA Average Rectified Output Current (Note 1) IO 250 mA IFSM 4.0 2.0 A PD 200 mW RθJA 625 °C/W Tj +150 °C TSTG -65 to +150 °C Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current@ t = 1.0µs @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 2) IR = 100µA Forward Voltage (Note 2) IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Symbol Min Max Unit V(BR)R 80 - V VF 0.62 - 0.72 0.855 1.0 1.25 V nA µA µA nA Reverse Current (Note 2) VR = 70V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V IR - 100 50 30 25 Total Capacitance VR = 6V, f = 1.0MHz CT - 3.5 pF Reverse Recovery Time VR = 6V, IF= 5mA Trr - 4.0 ns Notes:2. Short duration test pulse used to minimize self-heating effect. WEITRON http://www.weitron.com.tw 2/4 04-Jan-06 MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Device Marking Item MMBD4448HAQW MMBD4448HADW Marking Eqivalent Circuit diagram 1 KA5 3 1 2 KA6 3 MMBD4448HCDW 1 2 KA7 3 MMBD4448HSDW MMBD4448HTW WEITRON http://www.weitron.com.tw 1 2 KAB KAA 3/4 6 5 4 6 5 4 6 5 4 6 3 5 4 1 2 3 6 5 4 04-Jan-06 MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Typical Characteristics IR,INSTANTANEOUS REVERSE CURRENT (nA) IF,INSTANTANEOUS FORWARD CURRENT (mA) 1000 100 10 TA= -40ºC TA=0ºC TA=25ºC 1 TA=75ºC TA=125ºC 0.1 0 0.4 0.8 1.2 1.6 10000 TA=125ºC 1000 100 TA=75ºC 10 TA=25ºC TA=0ºC 1 TA= -40ºC 0.1 0 VF,INSTANTANEOUS FORWARD VOLTAGE (V) Pd,POWER DISSIPATION (mW) CT,TOTAL CAPACITANCE (pF) 2 1.5 1 0.5 200 150 100 50 0 10 20 40 30 100 250 f=1MHz 0 80 Fig.2 Typical Reverse Characteristics 2.5 0 60 40 VR, REVERSE VOLTAGE(V) Fig.1 Typical Forward Characteristics 3 20 0 100 200 TA, AMBIENT TEMPERATURE (°C) VR,REVERSEVOLTAGE(V) Fig.4 Power Derating Curve, Total Package Fig.3 Typical Capacitancevs .Reverse Voltage Trr,REVERSE RECOVERY TIME (nS) 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig.5 Reverse Recovery Time vs Forward Current WEITRON http://www.weitron.com.tw 4/4 04-Jan-06