WEITRON MMBD4448HCDW

MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Surface Mount Switching Multi-Chip
Diode Array
MULTI-CHIP DIODES
500m AMPERES
P b Lead(Pb)-Free
100 VOLTS
Features:
* Fast Switching Speed
* Ultra-Small Surface Mount Package
* For General Purpose Switching Applications
* High Conductance Power Dissipation
6 5
1
2
4
3
SOT-363
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
SOT-363 Outline Dimensions
Unit:mm
A
6
5
SOT-363
4
B C
1
2
D
3
E
H
K
J
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L
M
1/4
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.40
0.30
2.20
1.80
0.10
0.80
1.10
0.25
0.40
0.10
0.25
04-Jan-06
MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Maximum [email protected] TA= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
VRM
100
V
VRRM
VRWM
VR
80
V
VR(RMS)
57
V
Forward Continuous Current (Note 1)
IFM
500
mA
Average Rectified Output Current (Note 1)
IO
250
mA
IFSM
4.0
2.0
A
PD
200
mW
RθJA
625
°C/W
Tj
+150
°C
TSTG
-65 to +150
°C
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Non-Repetitive Peak Forward Surge [email protected] t = 1.0µs
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistant Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
IR = 100µA
Forward Voltage (Note 2)
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Symbol
Min
Max
Unit
V(BR)R
80
-
V
VF
0.62
-
0.72
0.855
1.0
1.25
V
nA
µA
µA
nA
Reverse Current (Note 2)
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
IR
-
100
50
30
25
Total Capacitance
VR = 6V, f = 1.0MHz
CT
-
3.5
pF
Reverse Recovery Time
VR = 6V, IF= 5mA
Trr
-
4.0
ns
Notes:2. Short duration test pulse used to minimize self-heating effect.
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04-Jan-06
MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Device Marking
Item
MMBD4448HAQW
MMBD4448HADW
Marking
Eqivalent Circuit diagram
1
KA5
3
1
2
KA6
3
MMBD4448HCDW
1
2
KA7
3
MMBD4448HSDW
MMBD4448HTW
WEITRON
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1
2
KAB
KAA
3/4
6
5
4
6
5
4
6
5
4
6
3
5
4
1
2
3
6
5
4
04-Jan-06
MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Typical Characteristics
IR,INSTANTANEOUS REVERSE CURRENT (nA)
IF,INSTANTANEOUS FORWARD CURRENT (mA)
1000
100
10
TA= -40ºC
TA=0ºC
TA=25ºC
1
TA=75ºC
TA=125ºC
0.1
0
0.4
0.8
1.2
1.6
10000
TA=125ºC
1000
100
TA=75ºC
10
TA=25ºC
TA=0ºC
1
TA= -40ºC
0.1
0
VF,INSTANTANEOUS FORWARD VOLTAGE (V)
Pd,POWER DISSIPATION (mW)
CT,TOTAL CAPACITANCE (pF)
2
1.5
1
0.5
200
150
100
50
0
10
20
40
30
100
250
f=1MHz
0
80
Fig.2 Typical Reverse Characteristics
2.5
0
60
40
VR, REVERSE VOLTAGE(V)
Fig.1 Typical Forward Characteristics
3
20
0
100
200
TA, AMBIENT TEMPERATURE (°C)
VR,REVERSEVOLTAGE(V)
Fig.4 Power Derating Curve, Total Package
Fig.3 Typical Capacitancevs .Reverse Voltage
Trr,REVERSE RECOVERY TIME (nS)
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
IF, FORWARD CURRENT (mA)
Fig.5 Reverse Recovery Time vs Forward Current
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04-Jan-06